TLP332BV [TOSHIBA]

Transistor Output Optocoupler, 1-Element, 5000V Isolation;
TLP332BV
型号: TLP332BV
厂家: TOSHIBA    TOSHIBA
描述:

Transistor Output Optocoupler, 1-Element, 5000V Isolation

输出元件 光电
文件: 总8页 (文件大小:363K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TLP331,TLP332  
TOSHIBA Photocoupler IRED & Photo-Transistor  
TLP331, TLP332  
Programmable Controllers  
AC/DC-Input Module  
Telecommunication  
Unit: mm  
The TOSHIBA TLP331 and TLP332 consist of an infrared emitting diode  
optically coupled to a photo-transistor in a six lead plastic DIP package.  
This photocoupler provides the unique feature of high current transfer ratio at  
both low output voltage and low input current. This makes it ideal for use in  
low power logic circuits, telecommunications equipment and portable  
electronics isolation applications.  
TLP332 has no-base internal connection for high-EMI environments.  
Collector-emitter voltage: 55 V (min)  
Isolation voltage: 5000 Vrms (min)  
UL-recognized: UL 1577, File No.E67349  
cUL-recognized: CSA Component Acceptance Service No.5A  
File No.E67349  
TOSHIBA  
11-7A8S  
Weight: 0.4 g (typ.)  
Current transfer ratio  
Current Transfer Ratio (min)  
Pin Configurations (top view)  
Ta = 25°C  
Ta = -25 to 75°C  
Classification  
(Note 1)  
Marking of  
Classification  
TLP331  
TLP332  
I
= 1 mA = 0.5 mA  
I
I
= 1 mA  
F
F
F
V
= 0.5V  
V
= 1.5V  
V
= 0.5V  
CE  
CE  
CE  
1
2
6
5
4
1
2
6
5
4
Rank BV  
Standard  
200%  
100%  
100%  
50%  
100%  
50%  
BV  
BV, blank  
Note 1: ex. Standard: TLP331  
Rank BV: TLP331(BV)  
3
3
Note: Application type name for certification test,  
please use standard product type name, i.e.  
TLP331(BV): TLP331  
1: ANODE  
2: CATHODE  
3: NC  
4: EMITTER  
5: COLLECTOR  
6: BASE  
1: ANODE  
2: CATHODE  
3: NC  
4: EMITTER  
5: COLLECTOR  
6: NC  
Start of commercial production  
1986-03  
© 2019  
Toshiba Electronic Devices & Storage Corporation  
1
2019-06-24  
TLP331,TLP332  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Forward current  
I
50  
-0.7  
1
mA  
mA/°C  
A
F
Forward current derating (Ta 39°C)  
Peak forward current (100 μs pulse, 100 pps)  
Reverse Voltage  
ΔI /°C  
F
I
FP  
V
P
5
V
R
D
50  
mW  
mW/°C  
Diode power dissipation  
ΔP /°C  
-0.58  
Diode power dissipation derating (Ta >39 °C)  
Junction temperature  
D
T
125  
55  
80  
7
°C  
V
j
Collector-emitter voltage  
V
V
V
V
CEO  
CBO  
ECO  
Collector-base voltage (TLP331)  
Emitter-collector voltage  
V
V
Emitter-base voltage (TLP331)  
7
V
EBO  
Collector current  
I
50  
mA  
C
Power dissipation  
P
150  
-1.5  
mW  
mW/°C  
°C  
C
Power dissipation derating (Ta 25°C)  
Junction temperature  
ΔP °C  
C/  
T
125  
j
Storage temperature range  
T
-55 to 125  
-55 to 100  
260  
°C  
stg  
opr  
Operating temperature range  
T
°C  
Lead soldering temperature (10 s)  
Total package power dissipation  
Total package power dissipation derating (Ta 25°C)  
Isolation voltage (AC, 60 s, RH 60 %)  
T
°C  
sol  
P
250  
mW  
mW/°C  
Vrms  
T
P /°C  
T
-2.5  
(Note 1)  
BV  
5000  
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc.).  
Note 1: Device considered a two terminal device: Pins 1, 2 and 3 shorted together and pins 4, 5 and 6 shorted  
together.  
Recommended Operating Conditions  
Characteristics  
Supply voltage  
Symbol  
Min  
Typ.  
Max  
Unit  
V
5
1.6  
1
25  
25  
10  
75  
V
CC  
Forward current  
I
mA  
mA  
°C  
F
Collector current  
I
C
Operating temperature  
T
-25  
opr  
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the  
device. Additionally, each item is an independent guideline respectively. In developing designs using this  
product, please confirm specified characteristics shown in this document.  
© 2019  
Toshiba Electronic Devices & Storage Corporation  
2
2019-06-24  
TLP331,TLP332  
Electrical Characteristics (Ta = 25°C)  
Characteristics  
Forward voltage  
Symbol  
Test Condition  
= 10 mA  
F
Min  
Typ.  
Max  
Unit  
V
I
1.0  
55  
7
1.15  
1.3  
10  
V
μA  
pF  
V
F
Reverse current  
I
V = 5 V  
R
R
Capacitance  
C
T
V = 0 V, f = 1 MHz  
30  
V
V
I
I
= 0.5 mA  
= 0.1 mA  
Collector-emitter breakdown voltage  
Emitter-collector breakdown voltage  
(BR)CEO  
(BR)ECO  
C
E
V
Collector-base breakdown voltage  
(TLP331)  
V
I
I
= 0.1 mA  
= 0.1 mA  
80  
7
V
V
(BR)CBO  
(BR)EBO  
C
E
Emitter-base breakdown voltage  
(TLP331)  
V
V
V
V
= 24 V  
10  
2
100  
50  
nA  
CE  
CE  
CE  
BE  
CB  
CE  
Collector dark current  
I
CEO  
= 24 V, Ta = 85 °C  
μA  
= 24 V, Ta = 85 °C  
= 1 MΩ  
Collector dark current (TLP331)  
I
I
0.5  
10  
μA  
CER  
R
Collector dark current (TLP331)  
DC forward current gain (TLP331)  
Capacitance (collector to emitter)  
V
V
= 10 V  
0.1  
1000  
12  
nA  
CBO  
h
= 5 V, I = 0.5 mA  
C
FE  
C
V = 0 V , f = 1 MHz  
pF  
CE  
Coupled Electrical Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
%
100  
200  
50  
10  
0.2  
1200  
1200  
I
I
= 1 mA, V = 0.5 V  
F
F
CE  
Current transfer ratio  
I /I  
C F  
Rank BV  
= 0.5 mA, V = 1.5 V  
CE  
Low input CTR  
I /I  
C F(low)  
%
Rank BV  
100  
Base photo-current (TLP331)  
I
I
I
= 1 mA, V = 5 V  
μA  
PB  
F
CB  
= 0.5 mA, I = 1 mA  
0.4  
C
F
V
V
Collector-emitter saturation voltage  
CE(sat)  
I
= 1 mA, I = 1 mA  
F
C
Rank BV  
0.4  
Coupled Electrical Characteristics (Ta = 25 to 75°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
%
50  
100  
I
I
= 1 mA, V = 0.5 V  
F
F
CE  
Current transfer ratio  
I /I  
C F  
Rank BV  
50  
= 0.5 mA, V = 1.5 V  
CE  
Low input CTR  
I /I  
C F(low)  
%
Rank BV  
100  
© 2019  
Toshiba Electronic Devices & Storage Corporation  
3
2019-06-24  
TLP331,TLP332  
Isolation Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
0.8  
Max  
Unit  
Capacitance (input to output)  
Isolation resistance  
C
R
V
= 0 V, f = 1 MHz  
S
pF  
Ω
S
10  
14  
V = 500 V, RH 60 %  
5×10  
10  
S
Isolation voltage  
BV  
AC, 60 s  
5000  
Vrms  
S
Switching Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Rise time  
Fall time  
t
8
8
r
t
f
V
= 10 V, I = 2 mA  
C
CC  
L
μs  
R = 100 Ω  
Turn-on time  
Turn-off time  
Turn-on time  
Storage time  
Turn-off time  
Turn-on time  
Storage time  
Turn-off time  
t
t
10  
8
on  
off  
t
10  
50  
300  
12  
30  
100  
ON  
R = 4.7 kΩ  
R
V
(Fig.1)  
L
BE  
CC  
t
= OPEN  
μs  
μs  
S
= 5 V, I = 1.6 mA  
F
t
OFF  
t
ON  
R = 4.7 kΩ  
R
V
(Fig.1)  
L
BE  
CC  
t
= 470 kΩ (TLP331)  
= 5 V, I = 1.6 mA  
F
S
t
OFF  
Fig. 1 Switching time test circuit  
I
F
V
V
I
F
CC  
R
L
t
S
V
CC  
4.5V  
0.5V  
CE  
V
CE  
R
BE  
t
t
OFF  
ON  
© 2019  
Toshiba Electronic Devices & Storage Corporation  
4
2019-06-24  
TLP331,TLP332  
I
Ta  
P
Ta  
C
F
100  
200  
160  
120  
80  
60  
80  
40  
0
40  
20  
0
-20  
0
20  
40  
60  
80  
100  
120  
-20  
0
20  
40  
60  
80  
100  
120  
Ambient temperature Ta (°C)  
Ambient temperature Ta (°C)  
I
– D  
I
– V  
F
FP  
R
F
5000  
3000  
1000  
Pulse width100μs  
Ta = 25°C  
500  
300  
Ta = 25°C  
1000  
100  
500  
300  
50  
30  
100  
10  
50  
30  
5
3
1
0.6  
10  
10-3  
10-2  
10-1  
100  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
DUTY CYCLE RATIO  
D
Forward voltage  
V
(V)  
R
F
ΔV /ΔTa – I  
I
– V  
FP FP  
F
F
-3.2  
-2.8  
-2.4  
1000  
500  
300  
100  
-2.0  
-1.6  
-1.2  
-0.8  
-0.4  
50  
30  
10  
Pulse width10μs  
5
3
Repetitive frequency  
= 100Hz  
Ta = 25°C  
1
0.6  
0.1  
0.0.5  
1
3
5
10  
30 50  
1.0  
1.4  
1.8  
2.2  
2.6  
Forward current  
I
F
(mA)  
Pulse forward voltage  
V
(V)  
FP  
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,  
unless otherwise noted.  
© 2019  
5
2019-06-24  
Toshiba Electronic Devices & Storage Corporation  
TLP331,TLP332  
I /I – I  
C F  
I
– V  
F
C
CE  
I
4.0  
3.5  
3.0  
2.5  
1000  
Ta = 25°C  
=1.0mA  
F
500  
300  
0.8mA  
100  
50  
30  
2.0  
1.5  
1.0  
Ta = 25°C  
V
V
V
= 5V  
CE  
CE  
CE  
= 1.5V  
= 0.5V  
0.6mA  
0.5mA  
0.4mA  
10  
0.1  
0.3  
0.5  
1
3
5
10  
Forward current  
I
F
(mA)  
0.5  
0
0.2mA  
I
– I  
C
F
50  
30  
0.1  
0.3  
0.5  
1
10  
3
5
Ta = 25°C  
V
CE  
V
CE  
V
CE  
= 5V  
Collector-emitter voltage  
V
(V)  
CE  
= 1.5V  
= 0.5V  
I
Ta  
C
30  
10  
V
V
= 1.5V  
= 0.5V  
CE  
10  
CE  
I =2mA  
F
5
3
5
3
1mA  
1
0.5mA  
0.5  
0.3  
1
0.5  
0.3  
0.1  
0.2mA  
0.05  
0.03  
0.1  
0.05  
0.03  
0.01  
0.1  
0.3  
0.5  
1
3
5
10  
-20  
0
20  
40  
60  
80  
100  
Forward current  
I
F
(mA)  
Ambient temperature Ta (°C)  
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,  
unless otherwise noted.  
© 2019  
Toshiba Electronic Devices & Storage Corporation  
6
2019-06-24  
TLP331,TLP332  
I
Ta  
Switching Time – R  
L
CEO  
101  
5000  
3000  
Ta = 25°C  
= 1.6mA  
I
F
V
CE  
=24V  
V
CC  
= 5V  
10V  
100  
10-1  
10-2  
5V  
1000  
500  
300  
t
OFF  
100  
50  
30  
t
S
10-3  
t
ON  
10-4  
10  
5
3
10-5  
0
20  
40  
60  
80  
100  
120  
1
3
5
10  
30  
(kΩ)  
50  
100  
Ambient temperature Ta (°C)  
Load resistance  
R
L
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,  
unless otherwise noted.  
© 2019  
Toshiba Electronic Devices & Storage Corporation  
7
2019-06-24  
TLP331,TLP332  
RESTRICTIONS ON PRODUCT USE  
Toshiba Corporation and its subsidiaries and affiliates are collectively referred to as “TOSHIBA”.  
Hardware, software and systems described in this document are collectively referred to as “Product”.  
TOSHIBA reserves the right to make changes to the information in this document and related Product without notice.  
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with  
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.  
Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are  
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and  
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily  
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the  
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of  
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes  
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the  
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their  
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such  
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,  
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating  
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR  
APPLICATIONS.  
PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE  
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH  
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT  
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without  
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, lifesaving and/or life supporting medical  
equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to  
control combustions or explosions, safety devices, elevators and escalators, and devices related to power plant. IF YOU USE  
PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your  
TOSHIBA sales representative or contact us via our website.  
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.  
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any  
applicable laws or regulations.  
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any  
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to  
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.  
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY  
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR  
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND  
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO  
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS  
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.  
GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or  
vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.  
Do not use or otherwise make available Product or related software or technology for any military purposes, including without  
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile  
technology products (mass destruction weapons). Product and related software and technology may be controlled under the  
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the  
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited  
except in compliance with all applicable export laws and regulations.  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of  
Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled  
substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES  
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.  
https://toshiba.semicon-storage.com/  
© 2019  
8
2019-06-24  
Toshiba Electronic Devices & Storage Corporation  

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