TLP4172G [TOSHIBA]

Photocoupler Photorelay; 光耦合器光电继电器
TLP4172G
型号: TLP4172G
厂家: TOSHIBA    TOSHIBA
描述:

Photocoupler Photorelay
光耦合器光电继电器

光电 继电器
文件: 总6页 (文件大小:171K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TLP4172G  
TOSHIBA Photocoupler Photorelay  
TLP4172G  
Telecommunication  
Measurement Equipment  
Security Equipment  
FA  
Unit: mm  
The Toshiba TLP4172G consists of an aluminum gallium arsenide  
infrared emitting diode optically coupled to a photo-MOSFET in a SOP  
package. This 1-form-B (NC) photorelay features a withstanding voltage  
of 350 V.  
4-pin SOP (2.54SOP4): Height = 2.1 mm, pitch = 2.54 mm  
Normally closed (1-form-B) device  
Peak off-state voltage: 350 V (min)  
Trigger LED current: 3 mA (max)  
On-state current: 90 mA (max)  
On-state resistance: 50 (max)  
Isolation voltage: 1500 Vrms (min)  
UL Recognized: UL1577, File No. E67349  
JEDEC  
Pin Configuration  
(top view)  
JEITA  
TOSHIBA  
Weight: 0.1 g (typ.)  
11-5H1  
1
4
2
3
1: Anode  
2: Cathode  
3: Drain  
4: Drain  
1
2004-07-26  
TLP4172G  
Maximum Ratings (Ta = 25°C)  
Characteristics  
Forward current  
Symbol  
Rating  
Unit  
I
50  
0.5  
1
mA  
mA/°C  
A
F
>
Forward current derating (Ta 25°C)  
I /°C  
F
=
Peak forward current (100 µs pulse, 100 pps)  
Reverse voltage  
I
FP  
V
R
5
V
Junction temperature  
T
125  
350  
°C  
j
Off-state output terminal voltage  
V
V
OFF  
One channel operation  
On-state current  
I
90  
mA  
ON  
Two channel operations  
(1a1b simultaneous operation)  
One channel operation  
On-state current derating  
I /°C  
ON  
0.9  
mA/°C  
>
Two channel operations  
(1a1b simultaneous operation)  
(Ta 25°C)  
=
Junction temperature  
Storage temperature range  
Operating temperature range  
Lead soldering temperature (10 s)  
T
125  
55 to 125  
40 to 85  
260  
°C  
°C  
j
T
stg  
opr  
T
°C  
T
sol  
°C  
<
Isolation voltage (AC, 1 min, R.H. 60%)  
(Note 1)  
BV  
1500  
Vrms  
=
S
Note 1: Pins 1 and 2 are shorted together, and pins 3 and 4 are shorted together.  
Recommended Operating Conditions  
Characteristics  
Supply voltage  
Symbol  
Min  
Typ.  
Max  
Unit  
V
5
280  
25  
V
DD  
Forward current  
I
mA  
mA  
°C  
F
On-state current  
I
90  
ON  
Operating temperature  
T
opr  
20  
65  
Electrical Characteristics  
=
(Ta 25°C)  
Characteristics  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
Forward voltage  
Reverse current  
Capacitance  
V
I
= 10 mA  
1.0  
1.15  
1.3  
10  
1
V
F
F
I
V
= 5 V  
µA  
pF  
µA  
pF  
R
R
C
V = 0, f = 1 MHz  
= 350 V, I = 5 mA  
30  
T
Off-state current  
Capacitance  
I
V
OFF  
OFF  
F
C
OFF  
V = 0, f = 1 MHz, I = 5 mA  
30  
F
Coupled Electrical Characteristics (Ta = 25°C)  
Characteristics  
Trigger LED current  
Symbol  
Test Condition  
= 10 µA  
OFF  
Min  
Typ.  
Max  
Unit  
I
I
I
I
0.1  
1
3
mA  
mA  
FC  
Return LED current  
On-state resistance  
I
FT  
= 90 mA  
= 90 mA  
27  
50  
ON  
ON  
R
ON  
2
2004-07-26  
TLP4172G  
Isolation Characteristics (Ta = 25°C)  
Characteristics  
Symbol  
Test Condition  
= 0, f = 1 MHz  
Min  
Typ.  
0.8  
Max  
Unit  
Capacitance input to output  
Isolation resistance  
C
R
V
V
pF  
S
S
S
= 500 V, R.H. 60%  
5 × 1010 1014  
<
=
S
AC, 1 min  
1500  
Vrms  
Vdc  
Isolation voltage  
BV  
S
AC, 1 s, in oil  
DC, 1 min, in oil  
3000  
3000  
Switching Characteristics (Ta = 25°C)  
Characteristics  
Turn-on time  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
t
0.25  
0.5  
0.5  
1
ms  
ms  
ON  
R
= 200 Ω  
L
V
DD  
= 20 V, I = 5 mA  
(Note 2)  
F
Turn-off time  
t
OFF  
Note 2: Switching time test circuit  
I
F
V
DD  
1
2
4
3
R
L
I
F
V
OUT  
V
OUT  
90%  
10%  
t
t
OFF  
ON  
3
2004-07-26  
TLP4172G  
I
Ta  
I
Ta  
ON  
F
100  
80  
60  
40  
20  
0
160  
120  
80  
40  
0
20  
0
20  
40  
60  
80  
100  
120  
20  
0
20  
40  
60  
80  
100  
120  
Ambient temperature Ta (°C)  
Ambient temperature Ta (°C)  
I
– V  
F
F
100  
Ta = 25°C  
30  
10  
3
1
0.3  
0.1  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1.8  
Forward voltage  
V
(V)  
F
4
2004-07-26  
TLP4172G  
R
ON  
Ta  
I
Ta  
FC  
50  
40  
30  
20  
10  
5
4
3
2
1
0
I
= 90 mA  
ON  
I
= 90 mA  
ON  
t < 1 s  
t < 1 s  
0
40  
20  
0
20  
40  
60  
80  
100  
100  
300  
40  
20  
0
20  
40  
60  
80  
100  
Ambient temperature Ta (°C)  
Ambient temperature Ta (°C)  
I
Ta  
I
– V  
ON  
OFF  
ON  
1000  
150  
V
I
= 350 V  
Ta = 25°C  
OFF  
= 5 mA  
100  
50  
300  
100  
F
0
30  
10  
50  
100  
150  
3
1
0
20  
40  
60  
80  
4  
3  
2  
1  
0
1
2
3
4
Ambient temperature Ta (°C)  
On-state voltage  
V
(V)  
ON  
t
, t  
– I  
ON OFF F  
3000  
1000  
t
, t  
Ta  
ON OFF  
Ta = 25°C  
= 20 V, R = 200 Ω  
3000  
1000  
V
DD  
L
V
= 20 V, R = 200 Ω  
L
DD  
I
= 5 mA  
F
t
OFF  
t
ON  
300  
100  
30  
300  
100  
t
ON  
t
OFF  
30  
10  
10  
1
40  
20  
0
20  
40  
60  
80  
100  
3
5
10  
30 50  
(mA)  
100  
Input current  
I
F
Ambient temperature Ta (°C)  
5
2004-07-26  
TLP4172G  
RESTRICTIONS ON PRODUCT USE  
030619EBC  
The information contained herein is subject to change without notice.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
The products described in this document are subject to the foreign exchange and foreign trade laws.  
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,  
cut, crush or dissolve chemically.  
6
2004-07-26  

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