TLP512_07 [TOSHIBA]
Digital Logic Ground Isolation; 数字逻辑接地隔离型号: | TLP512_07 |
厂家: | TOSHIBA |
描述: | Digital Logic Ground Isolation |
文件: | 总7页 (文件大小:202K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TLP512
TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
TLP512
Digital Logic Ground Isolation
Unit: mm
Line Receiver
Microprocessor System Interfaces
Switching Power Supply Feedback Control
Transistor Inverter
The TLP512 consists of a GaAℓAs high-output light emitting diode and a
high-speed detector that contains a PN photodiode and an amplifier
transistor into a single chip.
•
•
Isolation voltage: 2500 Vrms (min)
Switching speed:t = 0.8 μs, t
= 0.8 μs (max)
pLH
pHL
@R = 1.9 kΩ
L
•
•
TTL compatible
UL recognized: UL1577, file No. E67349
JEDEC
―
―
JEITA
TOSHIBA
Weight: 0.4 g (typ.)
11-7A8
Pin Configuration (top view)
Schematic
I
F
I
CC
1: Anode
1
2
6
V
1
2
3
6
5
4
CC
O
2: Cathode
V
F
I
3: NC
O
5
4
V
4: Emitter (GND)
5: Collector (OUT)
GND
6: V
CC
1
2007-10-01
TLP512
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
DC forward current
Pulse forward current
(Note 1)
(Note 2)
(Note 3)
I
25
mA
mA
A
F
I
50
FP
Peak transient forward current
DC reverse voltage
I
1
5
FPT
V
P
V
R
D
Diode power dissipation
Output current
(Note 4)
45
mW
mA
mA
V
I
8
O
Peak output current
I
16
OP
Output voltage
V
−0.5 to 15
−0.5 to 15
100
O
Supply voltage
V
V
CC
Output power dissipation
Operating temperature range
Storage temperature range
Soldering temperature (10 s)
Isolation voltage (R.H. ≤ 60%, AC 1 min)
(Note 5)
P
mW
°C
o
T
opr
−55 to 100
−55 to 125
260
T
stg
T
sol
°C
(Note 6)
(Note 7)
°C
BV
2500
Vrms
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Decreases at the rate of 0.8 mA/°C with the ambient temperature of 70°C or higher.
Note 2: Duty cycle of 50%, pulse width of 1 ms.
Decreases at the rate of 1.6 mA/°C with the ambient temperature of 70°C or higher.
Note 3: Pulse width ≤ 1 μs, 300 pps
Note 4: Decreases at the rate of 0.9 mW/°C with the ambient temperature of 70°C or higher.
Note 5: Decreases at the rate of 2 mW/°C with the ambient temperature of 70°C or higher.
Note 6: Soldering is performed 2 mm from the bottom of the package.
Note 7: Device considered a two-terminal device: pins 1, 2, and 3 shorted together and pins 4, 5 and 6 shorted
together.
2
2007-10-01
TLP512
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
Min
⎯
Typ.
1.65
−2
Max
Unit
V
V
I
I
= 16 mA
= 16 mA
1.85
F
F
Forward voltage temperature
coefficient
ΔV /ΔTa
⎯
⎯
mV/°C
F
F
Reverse current
I
V
V
= 5 V
⎯
⎯
⎯
⎯
⎯
4.5
3
10
⎯
μA
pF
nA
R
R
F
Pin-to-pin capacitance
C
= 0, f = 1 MHz
T
I
I
I
I
I
= 0 mA, V
= 0 mA, V
= 0 mA, V
= V = 5.5 V
500
5
OH (1)
OH (2)
F
F
F
CC
CC
CC
O
= V = 15 V
⎯
O
High-level output current
High-level supply current
μA
μA
= V = 15 V
O
I
⎯
⎯
⎯
50
1
OH
Ta = 70°C
I
I
= 0 mA, V
= 15 V
0.01
CCH
F
CC
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
20
Typ.
40
Max
Unit
%
I
V
= 16 mA, V
= 4.5 V
F
CC
⎯
= 0.4 V
O
Current transfer ratio
I /I
O F
I
V
= 16 mA, V
= 4.5 V
F
CC
15
⎯
⎯
⎯
= 0.4 V, Ta = 0 to 70°C
O
I
I
= 16 mA, V
= 2.4 mA
= 4.5 V
CC
F
Low-level output voltage
V
⎯
0.4
V
OL
O
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
= 0, f = 1 MHz
S
Min
Typ.
0.8
Max
Unit
Capacitance input to output
Isolation resistance
C
R
V
(Note 7)
⎯
⎯
⎯
⎯
⎯
⎯
pF
S
S
10
(Note 7) 5 × 10
14
R.H. ≤ 60%, V = 500 V
10
Ω
S
AC 1 min
2500
⎯
⎯
Vrms
Isolation voltage
BV
S
AC 1 s, in oil
DC 1 min, in oil
5000
5000
⎯
V
dc
3
2007-10-01
TLP512
Switching Characteristics (Ta = 25°C)
Test
Circuit
Characteristics
Symbol
Test Condition
= 0 → 16 mA, R = 1.9 kΩ
Min
Typ.
Max
Unit
Propagation delay time (H → L)
Propagation delay time (L → H)
t
t
I
I
⎯
⎯
⎯
⎯
0.8
0.8
μs
μs
pHL
F
F
L
1
= 16 → 0 mA, R = 1.9 kΩ
pLH
L
Common mode transient immunity at
logic high output
I
R
= 0 mA, V
L
= 200 V
CM P−P
F
CM
⎯
⎯
1500
⎯
⎯
V/μs
V/μs
H
= 1.9 kΩ
(Note 8)
2
Common mode transient immunity at
logic low output
I
R
= 16 mA, V
= 200 V
CM P−P
F
CM
−1500
L
= 1.9 kΩ
L
(Note 8)
Note 8: Common mode transient immunity in logic high level is the maximum tolerable (positive) dV /dt on the
CM
leading edge of the common mode pulse, V , to assure that the output will remain in a logic high state
CM
(V
OUT
> 2.0 V).
Common mode transient immunity in logic low level is the maximum tolerable (negative) dV /dt on the
CM
trailing edge of the common mode pulse, V , to assure that the output will remain in a logic low state
CM
(V
OUT
< 0.8 V).
Note 9: Electrostatic discharge immunity (pin to pin): 100 V (max)
(C ≤ 200 pF, R = 0)
Test Circuit 1: Switching Time Test Circuit
I
I
F
F
Pulse input
0
V
V
= 5 V
1
2
3
6
5
4
PW = 100 μs
CC
O
Duty ratio = 1/10
R
L
I
monitor
F
V
5 V
O
Output monitor
1.5 V
1.5 V
V
OL
t
t
pLH
pHL
Test Circuit 2: Common Mode Noise Immunity Test Circuit
I
F
200 V
0 V
90%
10%
V
V
= 5 V
1
2
3
6
5
4
CC
O
V
CM
R
L
t
t
f
r
Output monitor
V
O
5 V
2 V
(I = 0 mA)
F
V
CM
0.8 V
V
O
Pulse generator
= 50 Ω
V
OL
(I = 16 mA)
F
Z
O
160 (V)
160 (V)
CM
=
,CM =
L
H
t (μs)
r
t (μs)
f
4
2007-10-01
TLP512
I
– V
ΔV /ΔTa – I
F F
F
F
100
−2.6
−2.4
−2.2
−2.0
−1.8
−1.6
−1.4
Ta = 25°C
30
10
3
1
0.3
0.1
0.03
0.01
1.0
1.2
1.4
1.6
V
1.8
2.0
0.1
0.3
1
3
10
30
Forward voltage
(V)
Forward current
I
F
(mA)
F
I
(1) – Ta
I
– I
F
OH
O
300
100
10
V
V
= 5 V
CC
= 0.4 V
O
3
1
Ta = 25°C
30
10
0.3
0.1
3
0.03
0.01
1
0.6
0
40
80
120
160
0.1
0.3
1
3
10
30
100
Ambient temperature Ta (℃)
Forward current
I
F
(mA)
I /I – I
O F
I /I – Ta
O F
F
100
1.2
1.0
0.8
0.6
0.4
0.2
0
V
V
= 5 V
CC
= 0.4 V
O
30
10
Ta = −25ºC
25ºC
100ºC
3
1
Normalized to: I = 16 mA
F
V
V
= 4.5 V
CC
= 0.4 V
O
Ta = 25°C
0.1
0.3
1
3
10
30
−40
−20
0
20
40
60
80
100
Forward current
I
F
(mA)
Ambient temperature Ta (℃)
*: The above graphs show typical characteristics.
5
2007-10-01
TLP512
I
– V
V – I
O F
O
O
5
4
3
2
1
0
I
V
= 5 V
CC
F
I
I
= 30 mA
F
F
10
8
= 25 mA
= 20 mA
R
L
V
O
I
I
I
F
F
F
6
= 15 mA
= 10 mA
R
L
= 2 kΩ
Ta = 25°C
3.9 kΩ
10 kΩ
4
I
= 5 mA
F
2
V
= 5 V
CC
Ta = 25°C
01
0
1
2
3
4
5
6
7
0
4
8
12
16
20
24
Output voltage VO (V)
Forward current
I
F
(mA)
t
, t – R
pHL pLH L
I
= 16 mA
F
V
= 5 V
CC
Ta = 25°C
3
1
t
pLH
0.5
0.3
t
pHL
0.1
1
3
10
30
100
Load resistance
R
L
(kΩ)
*: The above graphs show typical characteristics.
6
2007-10-01
TLP512
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
7
2007-10-01
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