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TLP523-2(F) [TOSHIBA]

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TLP523-2(F)
型号： TLP523-2(F)
厂家： TOSHIBA    TOSHIBA
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晶体 光电 二极管 晶体管 光电晶体管
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TLP523,TLP523−2,TLP523−4  
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor  
TLP523, TLP523−2, TLP523−4  
Unit in mm  
Programmable Controllers  
DC−Output Module  
Solid State Relay  
The TOSHIBA TLP523, −2 and −4 consists of a gallium arsenide  
infrared emitting diode coupled with a silicon, darlington connected,  
phototransistor which has an integral base−emitter resistor to optimize  
switching speed and elevated temperature characteristics.  
The TLP523−2 offers two isolated channels in an eight lead plastic DIP  
package, while the TLP523−4 provide four isolated channels per  
package.  
TOSHIBA  
11−5B2  
Weight: 0.26 g  
•
•
•
•
•
Current transfer ratio: 500% (min.) (I = 1 mA)  
F
Isolation voltage: 2500 Vrms (min.)  
Collector−emitter voltage: 55 V (min.)  
Leakage current: 10μA (max.) (Ta = 85°C)  
UL recognized: UL1577, file no. E67349  
Pin Configurations (top view)  
TLP523-2  
TLP523  
TLP523-4  
1
8
1
2
16  
15  
14  
1
2
4
3
TOSHIBA  
11−10C4  
2
3
4
7
6
5
Weight: 0.54 g  
3
4
5
6
1 : Anode  
2 : Cathode  
3 : Emitter  
4 : Collector  
13  
12  
1, 3 : Anode  
2, 4 : Cathode  
5, 7 : Emitter  
6, 8 : Collector  
11  
10  
9
7
8
TOSHIBA  
11−20A3  
1, 3, 5, 7  
2, 4, 6, 8  
: Anode  
: Cathode  
Weight: 1.1 g  
9, 11, 13, 15 : Emitter  
10, 12, 14, 16: Collector  
1
2007-10-01  
TLP523,TLP523−2,TLP523−4  
Absolute Maximum Ratings (Ta = 25°C)  
Rating  
Characteristic  
Symbol  
Unit  
mA  
TLP523−2  
TLP523−4  
TLP523  
60  
Forward current  
I
50  
F
Forward current derating  
Pulse forward current  
Reverse voltage  
ΔI /°C  
−0.7 (Ta ≥ 39°C) −0.5 (Ta ≥ 25°C) mA /°C  
F
I
1 (100μs pulse, 100pps)  
A
V
FP  
V
5
R
Collector−emitter voltage  
Emitter−collector voltage  
Collector current  
V
V
55  
V
CEO  
ECO  
0.3  
150  
V
I
mA  
C
Collector power dissipation  
(1 circuit)  
P
150  
100  
mW  
C
Collector power dissipation  
derating (1 circuit (Ta ≥ 25°C))  
ΔP /°C  
−1.5  
−1.0  
mW /°C  
C
Operating temperature range  
Storage temperature range  
Lead soldering temperature (10 s)  
Total power dissipation  
T
−55~100  
−55~125  
260  
°C  
°C  
opr  
T
stg  
T
°C  
sol  
P
250  
150  
mW  
T
Total power dissipation derating  
(Ta ≥ 25°C)  
ΔP /°C  
−2.5  
−1.5  
mW /°C  
Vrms  
T
Isolation voltage  
(Note 1)  
BV  
2500 (AC, 1min., R.H.≤ 60%)  
S
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Note 1: Device considered a two terminal device: LED side pins shorted together and detector side pins shorted  
together.  
Recommended Operating Conditions  
Characteristic  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Supply voltage  
Forward current  
V
―
―
5
24  
20  
V
CC  
I
16  
mA  
F
Operating temperature  
range  
T
opr  
−25  
―
85  
°C  
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the  
device. Additionally, each item is an independent guideline respectively. In developing designs using this  
product, please confirm specified characteristics shown in this document.  
2
2007-10-01  
TLP523,TLP523−2,TLP523−4  
Electrical Characteristics (Ta = 25°C)  
Characteristic  
Forward voltage  
Symbol  
Test Condition  
= 10 mA  
F
Min.  
Typ.  
Max.  
Unit  
V
I
1.0  
—
1.15  
—
1.3  
10  
—
V
F
Reverse current  
Capacitance  
I
V
= 5 V  
R
μA  
pF  
R
C
V = 0, f = 1 MHz  
30  
—
T
Collector−emitter  
V
I
= 1 mA  
= 24 V  
55  
V
—
—
(BR) CEO  
C
breakdown voltage  
V
V
10  
200  
10  
nA  
—
—
CE  
Collector dark current  
I
CEO  
= 24 V, Ta = 85°C  
0.5  
μA  
CE  
Capacitance collector  
to emitter  
C
C
V = 0, f = 1 MHz  
10  
—
—
pF  
%
—
CE  
Current transfer ratio  
I
/ I  
F
I
I
= 1 mA, V = 1 V  
CE  
500  
2000  
F
Collector−emitter  
saturation voltage  
V
= 50 mA, I = 10 mA  
F
—
V
—
1
CE(sat)  
C
Capacitance input  
to output  
C
S
V
V
= 0, f = 1 MHz  
0.8  
—
—
pF  
—
S
1014  
Ω
5×1010  
Isolation resistance  
R
S
= 500 V, R.H.≤ 60%  
S
Switching Characteristics (Ta = 25°C)  
Characteristic  
Symbol  
Test Condition  
Min.  
Typ.  
Max.  
Unit  
Turn−on time  
Turn−off time  
t
—
—
3
—
—
μs  
μs  
ON  
V
= 10 V, R = 180 Ω  
L
= 16 mA  
CC  
I
F
t
80  
OFF  
Switching Time Test Circuit  
IF  
RL  
IF  
IF  
VCC  
VCE  
tOFF  
9V  
1V  
VCE  
tON  
3
2007-10-01  
TLP523,TLP523−2,TLP523−4  
I – Ta  
F
P
C
– Ta  
200  
160  
100  
80  
TLP523  
TLP523  
60  
120  
80  
40  
0
TLP523 -2, -4  
TLP523 -2, -4  
40  
20  
0
-20  
-20  
0
20  
40  
100  
120  
0
20  
40  
100  
120  
60  
80  
60  
80  
Ambient temperature Ta (℃)  
Ambient temperature Ta (℃)  
I – V  
I
– D  
R
F
F
FP  
100  
5000  
3000  
Ta = 25℃  
Pulse width ≤ 100μs  
Ta = 25℃  
50  
30  
1000  
10  
500  
300  
5
3
100  
1
50  
30  
0.5  
0.3  
10  
10-2  
3
10-1  
3
100  
3
10-3  
3
0.1  
1.0  
1.2  
1.6  
0.6  
0.8  
1.4  
1.8  
Duty cycle patio  
D
R
Forward voltage  
V
F
(V)  
ΔV / ΔTa – I  
I
– V  
FP  
F
F
FP  
-3.2  
-2.8  
-2.4  
-2.0  
-1.6  
-1.2  
-0.8  
-0.4  
1000  
500  
300  
100  
50  
30  
10  
Pulse width ≤ 10μs  
5
3
Repetitive frequency = 100Hz  
Ta = 25℃  
1
3
0.1  
0.3  
1
3
10  
30  
0.6  
1.0  
1.4  
1.8  
2.2  
2.6  
Forward current  
I
F
(mA)  
Pulse forward voltage  
V
(V)  
FP  
4
2007-10-01  
TLP523,TLP523−2,TLP523−4  
I
– I  
I
– I  
C
F
C
F
300  
100  
300  
100  
V
= 1V  
V
= 1.2V  
CE  
CE  
Ta = 25°C  
Ta = 25°C  
Sample 1  
Sample 1  
50  
30  
50  
30  
2
2
3
3
10  
10  
5
3
5
3
1
1
1
3
10  
30  
1
3
10  
30  
0.3  
0.3  
Forward current  
I
F
(mA)  
Forward current  
I
F
(mA)  
I
– T  
a
V
– T  
a
C
CE(sat)  
Test condition  
Test condition  
A : I =100mA, I =10mA  
A : I =10mA, V =1.2V  
CE  
C
F
F
B : I =50mA, I =10mA  
B : I =10mA, V =1.0V  
CE  
C
F
F
C : I =10mA, I =1mA  
C : I =2mA, V =1.2V  
CE  
C
F
F
D : I =1mA, I =0.5mA  
D : I =2mA, V =1.0V  
CE  
C
F
F
E : I =1mA, V =1.2V  
CE  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
F
F : I =1mA, V =1.0V  
F
CE  
140  
120  
100  
80  
Test condition  
A
Test condition  
A
B
C
B
D
60  
C
D
40  
20  
E
F
0
-40  
-40  
-20  
0
20  
40  
60  
80  
100  
-20  
0
20  
40  
60  
80  
100  
Ambient temperature Ta (℃)  
Ambient temperature Ta (℃)  
5
2007-10-01  
TLP523,TLP523−2,TLP523−4  
I
– V  
CE  
I
– V  
CE  
C
C
500  
300  
300  
100  
Ta = 25℃  
I
= 10mA  
F
P
Max.  
C
2mA  
Sample  
1
100  
2
50  
30  
1mA  
50  
30  
3
P
Max.  
C
10  
0.5mA  
10  
5
3
5
3
1
1
0.5  
0.3  
0.5  
0.3  
I
= 1mA  
F
Ta = 25℃  
0.1  
0.1  
0.1  
0
0.3  
1
3
10  
30  
0.4  
1.2  
1.6  
2.0  
2.4  
2.8  
3.2  
0.8  
Collector-emitter voltage  
V
(V)  
Collector-emitter voltage  
V
(V)  
CE  
CE  
Safe Operating Area  
Switching Time  
500  
300  
V
= 10V  
CC  
Ta = 25℃  
I
F
R
L
10ms※  
10ms※  
I
V
OUT  
F
90%  
10%  
1s※  
1s※  
V
OUT  
t
t
ON  
OFF  
100  
500  
300  
50  
30  
t
100ms※  
100ms※  
t
OFF(I =10mA)  
F
OFF(I =1mA)  
F
100  
50  
30  
t
DC operating Ta=25℃  
ON(I =1mA)  
F
10  
10  
5
3
t
※
Single  
ON(I =10mA)  
F
5
3
nonrepetitive  
pulse  
Ta=25℃  
Ta=60℃  
1
0.5  
1
30  
100  
300  
1k  
3k  
10k  
1
3
10  
30  
Load resistance  
R
L
(Ω)  
Collector-emitter voltage  
V
(V)  
CE  
6
2007-10-01  
TLP523,TLP523−2,TLP523−4  
RESTRICTIONS ON PRODUCT USE  
20070701-EN  
• The information contained herein is subject to change without notice.  
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc.  
• The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his  
document shall be made at the customer’s own risk.  
• The products described in this document shall not be used or embedded to any downstream products of which  
manufacture, use and/or sale are prohibited under any applicable laws and regulations.  
• The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patents or other rights of  
TOSHIBA or the third parties.  
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,  
cut, crush or dissolve chemically.  
• Please contact your sales representative for product-by-product details in this document regarding RoHS  
compatibility. Please use these products in this document in compliance with all applicable laws and regulations  
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses  
occurring as a result of noncompliance with applicable laws and regulations.  
7
2007-10-01  

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