TLP620-4D4(GB) [TOSHIBA]
Optocoupler - Transistor Output, 4 CHANNEL AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER;型号: | TLP620-4D4(GB) |
厂家: | TOSHIBA |
描述: | Optocoupler - Transistor Output, 4 CHANNEL AC INPUT-TRANSISTOR OUTPUT OPTOCOUPLER 输入元件 输出元件 光电 |
文件: | 总9页 (文件大小:248K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TLP620,TLP620−2,TLP620−4
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP620, TLP620−2, TLP620−4
Programmable Controllers
Unit in mm
AC / DC−Input Module
Telecommunication
The TOSHIBA TLP620, −2 and −4 consists of a photo−transistor
optically coupled to two gallium arsenide infrared emitting diode
connected in inverse parallel.
The TLP620−2 offers two isolated channels in an eight lead plastic DIP,
while the TLP620−4 provides four isolated channels in a sixteen plastic
DIP.
TOSHIBA
11−5B2
•
•
Collector−emitter voltage: 55V (min.)
Weight: 0.26 g (typ.)
Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
Pin Configurations (top view)
TLP620
TLP620-2
TLP620-4
4
3
1
2
8
1
2
3
4
5
16
1
2
7
6
15
14
1 : ANODE
CATHODE
2 : CATHODE
ANODE
3 : EMITTER
4 : COLLECTOR
3
4
TOSHIBA
11−10C4
Weight: 0.54 g (typ.)
13
12
11
10
9
5
1, 3 : ANODE
CATHODE
2, 4 : CATHODE
ANODE
5, 7 : EMITTER
6
7
8
6, 8 : COLLECTOR
1, 3, 5, 7
2, 4, 6, 8
: ANODE, CATHODE
: CATHODE, ANODE
9, 11, 13, 15 : EMITTER
10, 12, 14, 16 : COLLECTOR
TOSHIBA
11−20A3
Weight: 1.1 g (typ.)
1
2007-10-01
TLP620,TLP620−2,TLP620−4
Made In Japan
Made In Thailand
UL recognized
BSI approved
E67349
7426, 7427
*1 E152349
*2 7426, 7427
*1
*2
*1 UL1577
*2 BS EN60065: 2002, BS EN60950-1: 2002
•
•
Isolation voltage: 5000V
(min.)
rms
Option (D4) type
VDE approved: DIN EN 60747-5-2, certificate no.40009302
Maximum operating insulation voltage: 890V
PK
Highest permissible over voltage: 8000V
PK
(Note) When an EN 60747-5-2 approved type is needed,
please designate the “Option(D4)”.
•
Creepage distance: 6.4mm (min.)
Clearance: 6.4mm (min.)
Insulation thickness: 0.4mm (min.)
Absolute Maximum Ratings (Ta = 25°C)
Rating
Characteristic
Symbol
Unit
TLP620−2
TLP620−4
TLP620
Forward current
I
60
50
mA
mA / °C
A
F (RMS)
Forward current derating
Pulse forward current
Power dissipation (1 circuit)
Power dissipation derating
Junction temperature
ΔI / °C
−0.7 (Ta ≥ 39°C)
−0.5 (Ta ≥ 25°C)
F
I
1 (100μs pulse, 100pps)
FP
P
100
70
mW
mW / °C
°C
D
ΔP / °C
−1.0
−0.7
D
T
j
125
55
7
Collector−emitter voltage
Emitter−collector voltage
Collector current
V
V
V
CEO
ECO
V
I
50
mA
C
Collector power dissipation
(1 circuit)
P
150
100
mW
C
Collector power dissipation
derating (1 circuit) (Ta ≥ 25°C)
ΔP / °C
−1.5
−1.0
mW / °C
C
Junction temperature
Storage temperature range
Operating temperature range
Lead soldering temperature
Total package power dissipation
T
125
°C
°C
j
T
−55~125
−55~100
260 (10s)
stg
opr
T
°C
T
°C
sold
P
250
150
mW
T
Total package power dissipation
derating (Ta ≥ 25°C, 1 circuit)
ΔP / °C
−2.5
−1.5
mW / °C
T
Isolation voltage
BV
S
5000 (AC, 1 min., RH ≤ 60%)
V
rms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
2
2007-10-01
TLP620,TLP620−2,TLP620−4
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
Forward current
Collector current
V
―
―
5
16
1
24
20
10
85
V
CC
I
mA
mA
°C
F (RMS)
IC
―
Operating temperature
T
opr
−25
―
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
Individual Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
= ±10mA
F
Min.
Typ.
Max.
Unit
V
I
1.0
―
1.15
2.5
60
1.3
20
―
V
F
Forward current
Capacitance
I
V
= ±0.7V
F
μA
pF
F
C
V = 0, f = 1MHz
―
T
Collector−emitter
V
V
I
I
= 0.5mA
= 0.1mA
55
7
―
―
―
―
V
V
(BR) CEO
(BR) ECO
C
E
breakdown voltage
Emitter−collector
breakdown voltage
V
V
= 24V
―
―
10
2
100
50
nA
CE
CE
Collector dark current
I
CEO
= 24V, Ta = 85°C
μA
Capacitance
(collector to emitter)
C
CE
V
= 0, f = 1MHz
―
10
―
pF
CE
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
MIn.
Typ.
Max.
Unit
%
50
100
―
―
―
60
―
―
0.2
―
1
600
600
―
I
= ±5mA, V
= 5V
CE
F
Current transfer ratio
I / I
C F
Rank GB
IF = ±1mA, V
Rank GB
= 0.4V
CE
Saturated CTR
I
/ I
F (sat)
%
V
C
V
30
―
I
I
= 2.4mA, I = ±8mA
F
―
0.4
―
C
Collector−emitter saturation
―
CE (sat)
= 0.2 mA, I = ±1 mA
F
voltage
C
Rank GB
= ± 0.7V, V = 24V
CE
―
0.4
10
3
Off−state collector current
I
V
―
μA
C (off)
F
CTR symmetry
I
I
(I = −5mA) / I (I = +5mA)
0.33
1
―
C (ratio)
C
F
C
F
3
2007-10-01
TLP620,TLP620−2,TLP620−4
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
= 0, f = 1MHz
Min.
Typ.
0.8
Max.
Unit
Capacitance input to
C
R
V
V
―
―
pF
S
S
S
S
output
Isolation resistance
= 500V
1×1012
5000
―
1014
―
―
―
―
―
Ω
AC, 1 minute
V
rms
Isolation voltage
BV
S
AC, 1 second, in oil
DC, 1 minute, in oil
10000
10000
―
V
dc
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Rise time
t
―
―
―
―
―
―
―
2
3
―
―
―
―
―
―
―
r
V
= 10V
CC
= 2mA
L
Fall time
t
f
I
μs
C
Turn−on time
Turn−off time
Turn−on time
Storage time
Turn−off time
t
t
3
R = 100Ω
on
off
3
t
2
ON
R = 1.9kΩ
V
(Fig.1)
L
CC
μs
t
15
25
s
= 5V, I = ±16mA
F
t
OFF
Fig. 1 Switching time test circuit
I
F
V
CC
I
F
V
CC
4.5V
0.5V
R
L
t
S
V
CE
ON
V
CE
t
t
OFF
4
2007-10-01
TLP620,TLP620−2,TLP620−4
TLP620-2
TLP620-4
TLP620
I – Ta
F
I
– Ta
F
100
100
80
60
80
60
40
40
20
0
20
0
100
120
−20
0
20
40
60
80
−20
20
60
80
100
120
0
40
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
TLP620-2
TLP620-4
TLP620
P – Ta
C
P
– Ta
C
240
200
160
120
80
120
100
80
60
40
40
0
20
0
20
60
100
120
−20
0
40
80
−20
0
20
40
100
60
80
120
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
TLP620-2
TLP620-4
TLP620
I
– D
FP R
I
– D
FP R
3000
1000
3000
1000
Pulse width≦100μs
Pulse width≦100μs
Ta = 25°C
Ta = 25°C
500
300
500
300
100
100
50
30
50
30
10
10
−
−
−
−
−
−
2
1
0
3
3
2
1
0
3
10
10
10
3
10
3
3
10
3
3
3
10
10
10
3
Duty cycle ratio
D
Duty cycle ratio
D
R
R
5
2007-10-01
TLP620,TLP620−2,TLP620−4
I
– V
ΔV / ΔTa – I
F F
F
F
100
Ta = 25°C
−2.8
−2.4
−2.0
−1.6
−1.2
50
30
10
5
3
1
0.5
0.3
−0.8
−0.4
0.1
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
0.3
1
3
10
30
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
– V
I
– T
a
FP
FP
D
1000
1
Pulse width≦10μs
Repetitive
10
10
500
300
10
5
Frequency = 100Hz
Ta = 25°C
VCE = 24V
0
100
−
1
10
10
50
30
−
2
10
5
3
−
3
4
10
10
−
1
0
120
1.2
40
80
160
0.4
0.8
1.6
2.4
0
2.0
Pulse forward voltage
V
(V)
Ambient temperature Ta (°C)
FP
I
– V
I – V
C CE
C
CE
80
60
40
Ta = 25°C
Ta = 25°C
50mA
25
20
15
10
40mA
30mA
20mA
30mA
20mA
15mA
50mA
10mA
5mA
P
(MAX.)
C
10mA
20
0
5
0
I
= 2mA
F
I
= 5mA
F
0.2
0.8
1.2
1.0
0
0.4
0.6
1.4
2
4
8
0
6
10
Collector-emitter voltage
V
(V)
Collector-emitter voltage
V
(V)
CE
CE
6
2007-10-01
TLP620,TLP620−2,TLP620−4
V
– I
I – V
C F
F
F
60
40
100
Ta = 25°C
Ta = 25°C
10
50
30
5
10
V
= 0.4V
CE
20
5
3
0
1
0.5
0.3
−20
−40
0.1
0.05
0.03
−3
−1
−2
0
1
3
2
0.01
Forward voltage
V
(V)
F
1.0
1.2
0.8
0.9
1.1
1.3
Forward voltage
V
(V)
F
I
– I
F
C
100
Ta = 25°C
V
= 5V
CE
CE
50
30
V
= 0.4V
10
I
/ I – I
F F
C
500
300
5
3
Sample A
Sample A
Sample B
Sample B
1
100
0.5
0.3
50
30
Ta = 25°C
V
= 5V
CE
CE
0.1
V
= 0.4V
10
5
0.05
0.03
30
0.3
3
100
10
1
1
0.3
3
10
30
100
Forward current
I
(mA)
Forward current
I
(mA)
F
F
7
2007-10-01
TLP620,TLP620−2,TLP620−4
I
– Ta
V
(sat) – Ta
CE
C
100
0.24
V
= 5V
I
I
= 5mA
= 1mA
CE
F
I
= 25mA
F
C
50
30
0.20
0.16
0.12
0.08
10
5
10
5
3
1
0.04
0
1
0.5
0.3
0.5
−20
0
40
80
100
20
60
Ambient temperature Ta (°C)
0.1
−20
0
100
20
60
40
80
Ambient temperature Ta (°C)
R – Switching Time
L
1000
Ta = 25°C
I
= 16mA
F
500
300
t
, t , t Test condition
on off
s
V
= 5V
CC
V
CC
I
I
F
F
t
OFF
R
L
5V
100
V
4.5V
CE
0.5V
V
CE
50
30
t
s
t
s
R
BE
t
ON
t
OFF
10
5
3
t
ON
1
1
3
10
30
100
Load resistance
R
L
(kΩ)
8
2007-10-01
TLP620,TLP620−2,TLP620−4
RESTRICTIONS ON PRODUCT USE
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this
document.
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any
applicable laws or regulations.
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.
•
•
GaAs (Gallium Arsenide) is used in Product. GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or
vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product.
Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
•
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
9
2007-10-01
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