TLP705(TPF) [TOSHIBA]
Logic IC Output Optocoupler;型号: | TLP705(TPF) |
厂家: | TOSHIBA |
描述: | Logic IC Output Optocoupler 栅极 光电 输出元件 双极性晶体管 栅极驱动 |
文件: | 总6页 (文件大小:146K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TLP705
TOSHIBA Photocoupler GaAℓAs IRED + Photo IC
Preliminary
TLP705
Unit in mm
Plasma Display Panel.
Industrial Inverter
4.58±0.25
6
5
4
IGBT/Power MOS FET Gate Drive
The TOSHIBA TLP705 consists of a GaAℓAs light emitting diode and a
integrated photodetector.
This unit is 6-lead SDIP package. TLP705 is 50% smaller than 8PIN DIP
and has suited the safety standard reinforced insulation class.
So mounting area in safety standard required equipment can be reduced.
TLP705 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP705 is capable of “direct” gate drive of lowr Power IGBTs.
1
2
3
7.62±0.25
1.27±0.2
0.4±0.1
1.25±0.25
•
•
•
•
•
•
•
•
•
•
•
Peak output current
Operating frequency
Guaranteed performance over temperature : −40 to 100°C
Supply current
Power supply voltage
Threshold input current
: ±0.45 A (max)
: 250kHz (max)
10.0max
11-5J1
: 3mA (max)
: 10 to 20 V
TOSHIBA
11-5J1
Weight:0.26 g (typ.)
: I
= 8 mA (max)
FLH
Switching time (t
/ t
)
: 200 ns (max)
: 10 kV/µs
: 5000 Vrms
pLH pHL
Common mode transient immunity
Isolation voltage
UL Recognized
:UL1577, File No.E67349
Construction Mechanical Rating
7.62 mm pich
standard type
10.16 mm pich
TLPXXXF type
Creepage Distance
Clearance
7.0 mm (Min)
7.0 mm (Min)
0.4 mm (Min)
8.0 mm (Min)
8.0 mm (Min)
0.4 mm (Min)
Insulation Thickness
Truth Table
Input
LED
Tr1
Tr2
Output
H
L
ON
ON
OFF
ON
H
L
OFF
OFF
Pin Configuration (top view)
Schematic
I
CC
6
V
CC
O
(Tr1)
(Tr2)
I
F
1: Anode
1
2
3
6
5
4
1+
2: NC
I
3: Cathode
4: GND
V
O
F
5
3−
V
5: V (output)
O
4
6: V
CC
SHIELD
GND
SHIELD
A 0.1 µF bypass capacitor must be connected
between pin 6 and 4. (See Note 6)
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2004-10-19
TLP705
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Forward current
I
20
−0.54
1
mA
mA/°C
A
F
Forward current derating (Ta ≥ 85°C)
Peak transient forward current
Reverse voltage
∆I /∆Ta
F
(Note 1)
I
FP
V
5
V
R
Junction temperature
T
125
°C
j
“H” peak output current
“L” peak output current
(Note 2)
(Note 2)
I
−0.45
0.45
25
A
OPH
I
A
OPL
Output voltage
V
V
O
Supply voltage
V
25
V
CC
Junction temperature
T
f
125
°C
j
Operating frequency
(Note 3)
250
kHz
°C
Storage temperature range
Operating temperature range
Lead soldering temperature (10 s)
Isolation voltage (AC, 1 minute, R.H. ≤ 60%)
T
−55 to 125
−40 to 100
260
stg
opr
T
°C
(Note 4)
(Note 5)
T
°C
sol
BV
5000
Vrms
S
Note 1: Pulse width P ≤ 1µs, 300 pps
W
Note 2: Exponential waveform pulse width P ≤ 10 µs , f ≤15 kHz
W
Note 3: Exponential waveform IOPH ≤-0.25 A (≤80 ns) , IOPL ≤+0.25 A (≤80 ns) ,Ta =100 °C
Note 4: It is effective soldering area of Lead .
Note 5: Device considerd a two terminal device: pins 1, 2 and 3 shorted together, and pins 4, 5 and 6 shorted
together.
Note 6: A ceramic capacitor(0.1 µF) should be connected from pin 6 to pin 4 to stabilize the operation of the high
gain linear amplifier. Failure to provide the bypassing may impair the switching property.
The total lead length between capacitor and coupler should not exceed 1 cm.
Recommended Operating Conditions
Characteristics
Input current, ON
Symbol
Min
Typ.
Max
Unit
(Note 7)
I
10
0
15
0.8
mA
V
F (ON)
Input voltage, OFF
Supply voltage
V
F (OFF)
V
10
20
V
CC
Peak output current
Operating temperature
I
/ I
± 0.15
100
A
OPH OPL
T
-
40
°C
opr
Note 7: Input signal rise time (fall time) < 0.5 µs.
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2004-10-19
TLP705
Electrical Characteristics (Ta = −40 to 100°C, unless otherwise specified)
Test
Circu
it
Characteristics
Forward voltage
Symbol
Test Condition
Min
Typ.*
Max
1.8
Unit
V
I
I
= 10 mA, Ta = 25°C
= 10 mA
1.6
V
F
F
F
Temperature coefficient of forward
voltage
∆V /∆Ta
−2.0
mV/°C
F
Input reverse current
Input capacitance
I
V
= 5 V, Ta = 25°C
R
10
µA
R
C
V = 0 V , f = 1 MHz,Ta = 25°C
45
pF
T
I
I
V
V
V
V
= 4 V
−0.15
−0.35
OPH1
OPH2
6-5
6-5
5-4
5-4
V
= 15 V
CC
“H” Level
1
2
I
= 10 mA
F
Output current
= 10 V
= 2 V
−0.3
−0.6
A
(Note 8)
I
0.15
0.36
OPL1
OPL2
V
= 15 V
CC
“L” Level
I
= 0 mA
F
I
= 10 V
0.3
6.0
0.62
8.5
I
I
= −100 mA,
= 10 mA
O
F
“H” Level
“L” Level
V
3
4
OH
Output voltage
Supply current
V
= 10 V
V
CC
I
= 100 mA,
O
V
0.4
1.0
OL
V
= 0.8 V
F
“H” Level
“L” Level
L → H
I
5
6
I
I
= 10 mA
= 0 mA
2.0
2.0
2.5
3.0
3.0
8
CCH
F
F
V
V
= 10 to 20 V
CC
O
mA
open
I
CCL
Threshold input current
Threshold input voltage
Supply voltage
I
V
V
= 15 V, V > 1 V
mA
V
FLH
CC
CC
O
H → L
V
= 15 V, V < 1 V
0.8
10
FHL
O
V
20
V
CC
*: All typical values are at Ta = 25°C
Note 8: Duration of I time ≤ 50 µs
O
Note 9: This product is more sensitive than the conventional product to static electricity (ESD) because of a lowest
power consumption design.
General precaution to static electricity (ESD) is necessary for handling this component.
Isolation Characteristics (Ta = 25°C)
Characteristic
Capacitance input to output
Isolation resistance
Symbol
Test Condition
V = 0 V, f = 1MHz
Min.
Typ.
1.0
Max.
―
Unit
pF
Ω
C
(Note 5)
(Note 5)
―
S
S
12
14
R.H. ≤ 60%,V = 500V
S
R
1×10
10
―
AC, 1 minute
5000
―
―
―
―
―
Vrms
Vdc
Isolation voltage
BV
S
AC, 1 second, in oil
DC,1 minute,in oil
10000
10000
―
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2004-10-19
TLP705
Switching Characteristics (Ta = −40 to 100°C, unless otherwise specified)
Test
Characteristics
Symbol
Test Condition
Ta= 25℃
Min
70
Typ.*
95
Max
Unit
Circuit
L → H
H → L
L → H
t
t
t
170
170
200
pLH
pHL
pLH
I
= 0→10 mA
Ta= 25 ℃
= 10→ 0 mA
F
Propagation delay time
70
105
I
F
Ta= -40 to100℃
50
I
= 0→10 mA
F
Propagation delay time
V
= 20 V
CC
Ta= -40 to100℃
I
R = 30 Ω
H → L
t
50
200
90
g
pHL
= 10→0 mA
F
C = 1 nF
g
7
ns
f=250kHz
Duty Cycle
=50%
Ta= -40 to100℃
= 10 mA
Propagation delay difference
tpsk
-90
between any two parts or channels
I
F
Ta= -40 to100℃
= 10 mA
PWD
pHL pLH)
Pulse Width Distortion
-65
65
I
(t
-t
F
Output rise time (10-90%)
Output fall time (90-10%)
t
I
= 0 → 10 mA
= 10 → 0 mA
I = 10 mA
F
r
F
t
I
F
f
V
=
Common mode transient immunity
at hight level output
CM
CM
−10000
H
V
= 16 V
O (min)
1000Vp-p
= 20 V
8
V/µs
V
CC
Common mode transient immunity
at low level output
I = 0 mA
F
CM
10000
L
V
= 1 V
Ta = 25°C
O (max)
*: All typical values are at Ta = 25°C
Test Circuit 1: I
Test Circuit 2: I
OPH
OPL
1
6
1
6
I
OPL
A
V6-5
A
I
OPH
I
F
V
CC
V
CC
V5-4
3
4
3
4
Test Circuit 3: V
Test Circuit 4: V
OH
OL
1
1
6
V
6
OH
V
V
V
F
OL
I
F
V
V
CC
CC
V
3
4
3
4
4
2004-10-19
TLP705
Test Circuit 5: I
1
Test Circuit 6: I
1
CCH
CCL
6
I
I
CCL
A
CCH
A
6
V
I
CC
F
V
CC
3
3
4
4
Test Circuit 7 : tpLH, tpHL, tr, tf, PWD
6
1
I
F
( f=250 kHz
, Duty=50 %)
I
V
F
O
VOH
t
t
r
f
Rg = 30 Ω
V
CC
90
50%
10
%
Cg = 1 nF
V
O
%
3
4
t
pHL
t
pLH
VOL
Test Circuit 8: CM
H
, CM
L
1000 V
1
6
90%
I
F
V
V
CM
10
%
0.1 µF
SW
A
t
t
f
V
r
O
B
V
CC
• SW A: I = 10 mA
F
CM
CM
H
4
3
16V
O
V
1V
CM
+
−
L
• SW B: I = 0 mA
F
800 V
=
CM
L
t (µs)
r
800 V
f
CM =-
H
t (µs)
CM (CM ) is the maximum rate of rise (fall) of the common mode voltage that can be sustained with the output
L
H
voltage in the low (high) state.
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2004-10-19
TLP705
RESTRICTIONS ON PRODUCT USE
030619EBC
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• The products described in this document are subject to the foreign exchange and foreign trade laws.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
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2004-10-19
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