TLP908(O-LB,F) [TOSHIBA]
IC,REFLECTIVE DETECTOR,1-CHANNEL,DIP;型号: | TLP908(O-LB,F) |
厂家: | TOSHIBA |
描述: | IC,REFLECTIVE DETECTOR,1-CHANNEL,DIP |
文件: | 总8页 (文件大小:232K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TLP908(F),TLP908(LB,F)
TOSHIBA Photoreflective Sensors Infrared LED+Phototransistor
TLP908(F),TLP908(LB,F)
Unit: mm
Lead Free Product
Detection Of Start And End Marks On VCR And Audio
Tape
TLP908(F)
Detection Of VCR Reel Rotation
Detection Of Index Write−Protect and Presence Of Disk
In Floppy Disk Drive
Timing Detection In Electronic Printers And Typewriters
Reading Of Camera Film Information(DX Codes)
•
Very small package: 2.6×3.4mm(height 1.5mm)
TLP908(F): Flat lead type
TLP908(LB,F): Small dip type
•
•
•
Short detection distance: Optimum distance 0.5mm~1.5mm
High sensitivity: t ,t =10µs(typ.)
r
f
Black mold package impermeable to visible light
TOSHIBA
11−4B1
TLP908(LB,F)
Pin Connection
1
4
1. Anode
2. Cathode
3. Collector
4. Emitter
2
3
TOSHIBA
11−4B101
Weight: 0.05g(typ.)
1
2004-02-18
TLP908(F),TLP908(LB,F)
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
50
Unit
mA
Forward current
I
F
Forward current derating
(Ta>25°C)
∆I / °C
F
−0.67
mA / °C
Pulse forward current
Reverse voltage
(Note 1)
I
400
5
mA
V
FP
V
R
Collector−emitter voltage
Emitter−collector voltage
Collector power dissipation
V
30
5
V
CEO
ECO
V
V
P
50
mW
C
Collector power dissipation
derating(Ta>25°C)
∆P °C
C /
−0.67
mW / °C
Collector current
I
20
mA
°C
C
Operating temperature range
Storage temperature range
T
opr
−25~85
−30~100
T
stg
°C
(Note): Pulse width≦100µs,repetitive frequency = 100Hz
Optical And Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Symbol
Test Condition
Min
Typ.
Max
Unit
V
I =10mA
F
1.00
―
1.15
―
1.30
10
V
F
Reverse current
I
VR=5V
µA
nm
R
Peak emission wavelength
λ
I =10mA
F
―
940
―
P
Dark current
I (I
)
V
=10V,I =0
―
―
―
0.1
µA
D
CEO
CE
F
Peak sensitivity
wavelength
λ
―
900
―
nm
P
TLP908(F)
50
50
―
―
―
―
―
―
750
150
330
750
150
330
TLP908(R,F)
TLP908(O,F)
TLP908(LB,F)
TLP908(R-LB,F)
TLP908(O-LB,F)
110
50
V
=5V,
CE
Collector current
I
µA
C
I =10mA
F
50
110
V
=5V,I =10mA
F
CE
Leakage current
I
―
―
―
0.1
0.4
µA
V
LEAK
No reflecting substance exists.
Collector−emitter saturation
voltage
V
I =10mA,I =25µA
F
0.15
CE(sat)
C
Rise time
Fall time
t
―
―
10
10
―
―
r
V
=10V,I =1mA,
C
CC
L
µs
R =1kΩ
t
f
2
2004-02-18
TLP908(F),TLP908(LB,F)
(Note 2): Collector current test method
Aluminum evaporated
Aluminum evaporated
Glass
Glass
(1mm thickness)
(1mm thickness)
TLP908(F)
TLP908(LB,F)
Precautions
•
Soldering temperature: 260°C max
Soldering time: 3s max
Soldering
area
1.8mm 1.8mm
TLP908(F)
The diagonally shaded part in the
diagrams on the left represent the
soldering area.
TLP908(LB,F)
•
•
When forming the leads,be careful not to apply stress to the main body of the device(the resin part). Soldering
must be performed after the leads have been formed.
The collector current increases over time due to current flowing in the infrared LED. The design of circuits
which incorporate the device must take into account the change in collector current over time. The change in
collector current is equal to the reciprocal of the change in LED infrared optical output.
IC (t) PO (t)
=
IC (0) PO (0)
3
2004-02-18
TLP908(F),TLP908(LB,F)
I
– Ta
P – Ta
C
F
50
40
30
20
50
40
30
20
10
0
10
0
0
20
40
60
80
100
(°C)
120
140
0
20
40
60
80
100
120
Ambient temperature
T
a
Ambient temperature
T
a
(°C)
I
– D
I
– V
F
(typ.)
FP
R
F
2000
1000
50
30
Ta = 25 °C
T
a
= 25 °C
Pulse width ≦100 µs
500
300
10
T
a
=75°C
50
100
25
5
3
0
−25
50
30
0
1
0.9
−3
−2
−1
0
1.0
1.1
1.2
1.3
1.4
1.5
10
10
10
10
Duty ratio
D
Forward voltage
V
(V)
R
F
I
– V
(typ.)
I
C
– I
F
(typ.)
FP
FP
500
300
3000
1000
100
500
300
Sample A
50
30
B
C
100
10
50
30
Pulse width = 100 µs
Repetitive
5
3
T
= 25 °C
a
V
CE
CE
= 5 V
frequency = 100 Hz
V
= 0.4 V
T
a
= 25 °C
1
10
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8
1
3
10
30
100
(mA)
300
1000
Pulse forward voltage (V)
V
Forward current I
F
FP
4
2004-02-18
TLP908(F),TLP908(LB,F)
V
– Ta
(typ.)
CE(sat)
I
– V
(typ.)
C
CE
0.24
600
T
a
= 25 °C
I
= 10 mA
= 25 µA
F
I
C
20
16
12
0.20
0.16
0.12
500
400
300
0.08
0.04
0
200
8
I
= 4mA
F
100
0
−40
−20
0
20
40
60
80
100
0
2
4
6
8
10
12
(V)
14
Ambient temperature Ta (°C)
Collector–emitter voltage
V
CE
I
– T
(typ.)
I
I
– Ta
(typ.)
C
a
D( CEO)
1000
V
CE
= 5 V
500
300
1
20
10
−1
100
10
V
CE
= 10 V
50
30
5
5
−2
10
I
F
= 2mA
10
−3
5
3
10
10
−4
1
−40
0
20
40
60
80
100
120
140
−20
0
20
40
60
80
100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
5
2004-02-18
TLP908(F),TLP908(LB,F)
t , t – I
(typ.)
r
f
C
Switching Characteristics
(typ.)
1000
1000
T
= 25 °C
a
Ta = 25 °C
V
CC
= 10 V
V
= 10 V
CC
500
300
500
300
t
t
r
V
OUT
= 3 V
f
t
r,
t
f
R
L
= 10 kꢀ
100
100
50
30
50
30
3 kꢀ
1 kꢀ
t
d
t
s
10
10
100 ꢀ
5
3
5
3
1
1
3
10
Load resistance
30
L
100
1
30
100
300
1000
(µA)
3000
R
(kꢀ)
Collector current
I
C
Spectral Response Characteristics
(Detector) (typ.)
1.2
1.0
0.8
0.6
Switching Time Test Circuit
Ta = 25 °C
V
I
CC
F
I
F
V
OUT
90%
10%
I
R
L
V
C
OUT
t
t
d
f
0.4
0.2
0
t
t
s
r
500
600
700
800
900
1000
(nm)
1100
1200
Wavelength
λ
6
2004-02-18
TLP908(F),TLP908(LB,F)
Detection Distance
Characteristic (1)
Detection Position
Characteristic (1)
(typ.)
(typ.)
1.4
1.2
1.0
0.8
0.6
0.4
I
= 10 mA
= 2 V
T
= 25 °C
= 5 V
F
a
1.0
0.8
0.6
V
T
V
I
CE
CE
= 25 °C
= 10 mA
a
F
Tes t card:
d = 1 mm
Reflection ratio
90% for white
color paper
0.4
0.2
0
−3
−2
−1
0
1
2
3
4
0.2
0
Card moving distance
ℓ
(mm)
0
1
2
3
4
5
6
7
8
Distance between device
and test cards (mm)
d
Detection Position
Characteristic (2)
Detection Distance
Characteristic (2)
(typ.)
(typ.)
1000
500
T
= 25 °C
a
(a) Reflection ratio 90% for
white color paper
(b) Aℓ
1.0
0.8
0.6
V
= 5 V
CE
I
F
= 10 mA
d = 1 mm
(c) PPC paper
(d) OHP
300
100
(e) Magnetic tape
T
a
= 25 °C
I
F
= 10 mA
0.4
0.2
0
V
CE
= 5 V
50
30
(a)
−3
−2
−1
0
1
2
(mm)
3
4
(d)
(b)
(c)
10
Card moving distance
ℓ
(e)
5
3
Test Conditions For Detection
Position Characteristics
Detection position (1)
Test card
1
0
1
2
3
4
5
6
7
8
Test card
Distance between device
and test cards (mm)
−ℓ
+ℓ
+ℓ
d
−ℓ
d
d
Detection position(2)
Test card
Test card
+ℓ
−ℓ
d
d
−ℓ
+ℓ
Test card : Reflection ratio 90% for white color
paper(kodak neutral test card)
7
2004-02-18
TLP908(F),TLP908(LB,F)
RESTRICTIONS ON PRODUCT USE
030619EAC
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
8
2004-02-18
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