TLP908(O-LB,F) [TOSHIBA]

IC,REFLECTIVE DETECTOR,1-CHANNEL,DIP;
TLP908(O-LB,F)
型号: TLP908(O-LB,F)
厂家: TOSHIBA    TOSHIBA
描述:

IC,REFLECTIVE DETECTOR,1-CHANNEL,DIP

文件: 总8页 (文件大小:232K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TLP908(F),TLP908(LB,F)  
TOSHIBA Photoreflective Sensors Infrared LED+Phototransistor  
TLP908(F),TLP908(LB,F)  
Unit: mm  
Lead Free Product  
Detection Of Start And End Marks On VCR And Audio  
Tape  
TLP908(F)  
Detection Of VCR Reel Rotation  
Detection Of Index WriteProtect and Presence Of Disk  
In Floppy Disk Drive  
Timing Detection In Electronic Printers And Typewriters  
Reading Of Camera Film Information(DX Codes)  
Very small package: 2.6×3.4mm(height 1.5mm)  
TLP908(F): Flat lead type  
TLP908(LB,F): Small dip type  
Short detection distance: Optimum distance 0.5mm~1.5mm  
High sensitivity: t ,t =10µs(typ.)  
r
f
Black mold package impermeable to visible light  
TOSHIBA  
114B1  
TLP908(LB,F)  
Pin Connection  
1
4
1. Anode  
2. Cathode  
3. Collector  
4. Emitter  
2
3
TOSHIBA  
114B101  
Weight: 0.05g(typ.)  
1
2004-02-18  
TLP908(F),TLP908(LB,F)  
Maximum Ratings (Ta = 25°C)  
Characteristic  
Symbol  
Rating  
50  
Unit  
mA  
Forward current  
I
F
Forward current derating  
(Ta>25°C)  
I / °C  
F
0.67  
mA / °C  
Pulse forward current  
Reverse voltage  
(Note 1)  
I
400  
5
mA  
V
FP  
V
R
Collectoremitter voltage  
Emittercollector voltage  
Collector power dissipation  
V
30  
5
V
CEO  
ECO  
V
V
P
50  
mW  
C
Collector power dissipation  
derating(Ta>25°C)  
P °C  
C /  
0.67  
mW / °C  
Collector current  
I
20  
mA  
°C  
C
Operating temperature range  
Storage temperature range  
T
opr  
25~85  
30~100  
T
stg  
°C  
(Note): Pulse width100µs,repetitive frequency = 100Hz  
Optical And Electrical Characteristics (Ta = 25°C)  
Characteristic  
Forward voltage  
Symbol  
Test Condition  
Min  
Typ.  
Max  
Unit  
V
I =10mA  
F
1.00  
1.15  
1.30  
10  
V
F
Reverse current  
I
VR=5V  
µA  
nm  
R
Peak emission wavelength  
λ
I =10mA  
F
940  
P
Dark current  
I (I  
)
V
=10V,I =0  
0.1  
µA  
D
CEO  
CE  
F
Peak sensitivity  
wavelength  
λ
900  
nm  
P
TLP908(F)  
50  
50  
750  
150  
330  
750  
150  
330  
TLP908(R,F)  
TLP908(O,F)  
TLP908(LB,F)  
TLP908(R-LB,F)  
TLP908(O-LB,F)  
110  
50  
V
=5V,  
CE  
Collector current  
I
µA  
C
I =10mA  
F
50  
110  
V
=5V,I =10mA  
F
CE  
Leakage current  
I
0.1  
0.4  
µA  
V
LEAK  
No reflecting substance exists.  
Collectoremitter saturation  
voltage  
V
I =10mA,I =25µA  
F
0.15  
CE(sat)  
C
Rise time  
Fall time  
t
10  
10  
r
V
=10V,I =1mA,  
C
CC  
L
µs  
R =1kΩ  
t
f
2
2004-02-18  
TLP908(F),TLP908(LB,F)  
(Note 2): Collector current test method  
Aluminum evaporated  
Aluminum evaporated  
Glass  
Glass  
(1mm thickness)  
(1mm thickness)  
TLP908(F)  
TLP908(LB,F)  
Precautions  
Soldering temperature: 260°C max  
Soldering time: 3s max  
Soldering  
area  
1.8mm 1.8mm  
TLP908(F)  
The diagonally shaded part in the  
diagrams on the left represent the  
soldering area.  
TLP908(LB,F)  
When forming the leads,be careful not to apply stress to the main body of the device(the resin part). Soldering  
must be performed after the leads have been formed.  
The collector current increases over time due to current flowing in the infrared LED. The design of circuits  
which incorporate the device must take into account the change in collector current over time. The change in  
collector current is equal to the reciprocal of the change in LED infrared optical output.  
IC (t) PO (t)  
=
IC (0) PO (0)  
3
2004-02-18  
TLP908(F),TLP908(LB,F)  
I
Ta  
P – Ta  
C
F
50  
40  
30  
20  
50  
40  
30  
20  
10  
0
10  
0
0
20  
40  
60  
80  
100  
(°C)  
120  
140  
0
20  
40  
60  
80  
100  
120  
Ambient temperature  
T
a
Ambient temperature  
T
a
(°C)  
I
– D  
I
– V  
F
(typ.)  
FP  
R
F
2000  
1000  
50  
30  
Ta = 25 °C  
T
a
= 25 °C  
Pulse width 100 µs  
500  
300  
10  
T
a
=75°C  
50  
100  
25  
5
3
0
25  
50  
30  
0
1
0.9  
3  
2  
1  
0
1.0  
1.1  
1.2  
1.3  
1.4  
1.5  
10  
10  
10  
10  
Duty ratio  
D
Forward voltage  
V
(V)  
R
F
I
– V  
(typ.)  
I
C
– I  
F
(typ.)  
FP  
FP  
500  
300  
3000  
1000  
100  
500  
300  
Sample A  
50  
30  
B
C
100  
10  
50  
30  
Pulse width = 100 µs  
Repetitive  
5
3
T
= 25 °C  
a
V
CE  
CE  
= 5 V  
frequency = 100 Hz  
V
= 0.4 V  
T
a
= 25 °C  
1
10  
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8  
1
3
10  
30  
100  
(mA)  
300  
1000  
Pulse forward voltage (V)  
V
Forward current I  
F
FP  
4
2004-02-18  
TLP908(F),TLP908(LB,F)  
V
Ta  
(typ.)  
CE(sat)  
I
– V  
(typ.)  
C
CE  
0.24  
600  
T
a
= 25 °C  
I
= 10 mA  
= 25 µA  
F
I
C
20  
16  
12  
0.20  
0.16  
0.12  
500  
400  
300  
0.08  
0.04  
0
200  
8
I
= 4mA  
F
100  
0
40  
20  
0
20  
40  
60  
80  
100  
0
2
4
6
8
10  
12  
(V)  
14  
Ambient temperature Ta (°C)  
Collector–emitter voltage  
V
CE  
I
– T  
(typ.)  
I
I
Ta  
(typ.)  
C
a
D( CEO)  
1000  
V
CE  
= 5 V  
500  
300  
1
20  
10  
1  
100  
10  
V
CE  
= 10 V  
50  
30  
5
5
2  
10  
I
F
= 2mA  
10  
3  
5
3
10  
10  
4  
1
40  
0
20  
40  
60  
80  
100  
120  
140  
20  
0
20  
40  
60  
80  
100  
Ambient temperature Ta (°C)  
Ambient temperature Ta (°C)  
5
2004-02-18  
TLP908(F),TLP908(LB,F)  
t , t – I  
(typ.)  
r
f
C
Switching Characteristics  
(typ.)  
1000  
1000  
T
= 25 °C  
a
Ta = 25 °C  
V
CC  
= 10 V  
V
= 10 V  
CC  
500  
300  
500  
300  
t
t
r
V
OUT  
= 3 V  
f
t
r,  
t
f
R
L
= 10 kꢀ  
100  
100  
50  
30  
50  
30  
3 kꢀ  
1 kꢀ  
t
d
t
s
10  
10  
100 ꢀ  
5
3
5
3
1
1
3
10  
Load resistance  
30  
L
100  
1
30  
100  
300  
1000  
(µA)  
3000  
R
(k)  
Collector current  
I
C
Spectral Response Characteristics  
(Detector) (typ.)  
1.2  
1.0  
0.8  
0.6  
Switching Time Test Circuit  
Ta = 25 °C  
V
I
CC  
F
I
F
V
OUT  
90%  
10%  
I
R
L
V
C
OUT  
t
t
d
f
0.4  
0.2  
0
t
t
s
r
500  
600  
700  
800  
900  
1000  
(nm)  
1100  
1200  
Wavelength  
λ
6
2004-02-18  
TLP908(F),TLP908(LB,F)  
Detection Distance  
Characteristic (1)  
Detection Position  
Characteristic (1)  
(typ.)  
(typ.)  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
I
= 10 mA  
= 2 V  
T
= 25 °C  
= 5 V  
F
a
1.0  
0.8  
0.6  
V
T
V
I
CE  
CE  
= 25 °C  
= 10 mA  
a
F
Tes t card:  
d = 1 mm  
Reflection ratio  
90% for white  
color paper  
0.4  
0.2  
0
3  
2  
1  
0
1
2
3
4
0.2  
0
Card moving distance  
(mm)  
0
1
2
3
4
5
6
7
8
Distance between device  
and test cards (mm)  
d
Detection Position  
Characteristic (2)  
Detection Distance  
Characteristic (2)  
(typ.)  
(typ.)  
1000  
500  
T
= 25 °C  
a
(a) Reflection ratio 90% for  
white color paper  
(b) Aℓ  
1.0  
0.8  
0.6  
V
= 5 V  
CE  
I
F
= 10 mA  
d = 1 mm  
(c) PPC paper  
(d) OHP  
300  
100  
(e) Magnetic tape  
T
a
= 25 °C  
I
F
= 10 mA  
0.4  
0.2  
0
V
CE  
= 5 V  
50  
30  
(a)  
3  
2  
1  
0
1
2
(mm)  
3
4
(d)  
(b)  
(c)  
10  
Card moving distance  
(e)  
5
3
Test Conditions For Detection  
Position Characteristics  
Detection position (1)  
Test card  
1
0
1
2
3
4
5
6
7
8
Test card  
Distance between device  
and test cards (mm)  
−ℓ  
+ℓ  
+ℓ  
d
−ℓ  
d
d
Detection position(2)  
Test card  
Test card  
+ℓ  
−ℓ  
d
d
−ℓ  
+ℓ  
Test card : Reflection ratio 90% for white color  
paper(kodak neutral test card)  
7
2004-02-18  
TLP908(F),TLP908(LB,F)  
RESTRICTIONS ON PRODUCT USE  
030619EAC  
The information contained herein is subject to change without notice.  
The information contained herein is presented only as a guide for the applications of our products. No  
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which  
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of  
TOSHIBA or others.  
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor  
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical  
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of  
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of  
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.  
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as  
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and  
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability  
Handbook” etc..  
The TOSHIBA products listed in this document are intended for usage in general electronics applications  
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,  
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires  
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or  
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or  
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,  
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this  
document shall be made at the customer’s own risk.  
TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced  
and sold, under any law and regulations.  
GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,  
cut, crush or dissolve chemically.  
8
2004-02-18  

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