TLRME28C [TOSHIBA]
Panel Circuit Indicator; 面板指示灯电路
| 型号： | TLRME28C |
| 厂家： | 
TOSHIBA |
| 描述： | Panel Circuit Indicator |
| 文件： | 总9页 (文件大小：282K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TL(RE,RME,SE,OE,YE,GE)28C(F)
TOSHIBA InGaAℓP LED
TLRE28C(F),TLRME28C(F),TLSE28C(F),TLOE28C(F),
TLYE28C(F),TLGE28C(F)
Unit: mm
○Panel Circuit Indicator
•
•
•
•
•
•
•
•
Lead(Pb)-free products (lead: Sn-Ag-Cu)
4.3x5mm
InGaAℓP technology
Colored Transparent lens
Lineup: 6 colors (red,yellow, green)
Excellent low current light output
High intensity light emission
Applications: message boards, dashboard displays
Lineup
JEDEC
EIAJ
―
―
Product Name
Color
Material
TLRE28C(F)
TLRME28C(F)
TLSE28C(F)
TLOE28C(F)
TLYE28C(F)
TLGE28C(F)
Red
Red
InGaAℓP
InGaAℓP
InGaAℓP
InGaAℓP
InGaAℓP
InGaAℓP
TOSHIBA
4-5AQ1
Red
Weight: 0.25 g (Typ.)
Orange
Yellow
Green
Absolute Maximum Ratings (Ta = 25°C)
Operating
Temperature
Storage
Temperature
(°C)
Forward Current
Reverse Voltage
(V)
Power Dissipation
(mW)
Product Name
I
(mA)
V
P
D
F
R
T
opr
(°C)
T
stg
TLRE28C(F)
TLRME28C(F)
TLSE28C(F)
TLOE28C(F)
TLYE28C(F)
TLGE28C(F)
50
50
50
50
50
50
4
120
120
120
120
120
120
4
4
4
4
4
−40~100
−40~120
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-10-01
TL(RE,RME,SE,OE,YE,GE)28C(F)
Electrical and Optical Characteristics (Ta = 25°C)
Reverse
Current
Luminous Intensity
Forward Voltage
Typ. Emission Wavelength
I
V
F
V
Product Name
I
R
λ
λ
Δλ
20
23
20
20
17
17
I
Min
85
Typ.
200
200
300
500
350
150
I
Typ.
1.9
1.9
1.9
2.0
2.0
2.0
Max
2.4
2.4
2.4
2.4
2.4
2.4
I
Max
50
V
R
d
P
F
F
F
TLRE28C(F)
TLRME28C(F)
TLSE28C(F)
TLOE28C(F)
TLYE28C(F)
TLGE28C(F)
Unit
630
626
613
605
587
571
(644)
(636)
(623)
(612)
(590)
(574)
nm
20
20
20
20
20
20
mA
20
20
20
20
20
20
mA
20
20
20
20
20
20
mA
4
85
50
4
4
4
4
4
V
85
50
153
153
47.6
50
50
50
mcd
V
μA
Please be careful of the following:
•
•
•
Soldering temperature: 260°C max, soldering time: 3 s max
(soldering portion of lead: below the lead stopper of the device)
If the lead is formed, the lead should be formed up to below the lead stopper of the device without forming stress
to the resin. Soldering should be performed after lead forming.
This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
2
2007-10-01
TL(RE,RME,SE,OE,YE,GE)28C(F)
TLRE28C(F)
I
– V
I – I
V F
F
F
100
3000
1000
Ta = 25 °C
Ta = 25 °C
50
30
10
100
5
3
10
1
1.6
1
10
100
1.7
1.8
1.9
2.0
2.1
2.2
2.3
Forward current
I
(mA)
Forward voltage
V
(V)
F
F
I
– Tc
Relative luminous intensity – Wavelength
V
10
1.0
0.8
I
= 20mA
F
Ta = 25 °C
5
3
0.6
0.4
0.2
0
1
0.5
0.3
0.1
580
600
620
640
660
680
700
−20
0
20
40
60
80
Case temperature Tc (°C)
Wavelength
λ (nm)
Radiation pattern
I
– Ta
F
80
60
40
20
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
3
2007-10-01
TL(RE,RME,SE,OE,YE,GE)28C(F)
TLRME28C(F)
I
– V
F
F
I
– I
F
V
100
3000
1000
Ta = 25 °C
Ta = 25 °C
50
30
10
100
5
3
1
1.6
10
1.7
1.8
1.9
2.0
2.1
2.2
2.3
1
10
100
Forward voltage
V
(V)
Forward current
I
(mA)
F
F
I
– Tc
Relative luminous intensity – Wavelength
V
10
1.0
0.8
I
= 20mA
F
Ta = 25 °C
5
3
0.6
0.4
0.2
0
1
0.5
0.3
0.1
580
600
620
640
660
680
700
−20
0
20
40
60
80
Case temperature Tc (°C)
Wavelength
λ (nm)
Radiation pattern
I
– Ta
F
80
60
40
20
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
4
2007-10-01
TL(RE,RME,SE,OE,YE,GE)28C(F)
TLSE28C(F)
I
– V
I – I
V F
F
F
100
10000
1000
Ta = 25 °C
Ta = 25 °C
50
30
10
5
3
100
10
1
1.6
1
10
100
1.7
1.8
1.9
2.0
2.1
2.2
2.3
Forward current
I
(mA)
Forward voltage
V
(V)
F
F
I
– Tc
Relative luminous intensity – Wavelength
V
3
1
1.0
0.8
I
= 20mA
F
Ta = 25 °C
0.6
0.4
0.2
0
0.5
0.3
0.1
560
580
600
620
640
660
680
−20
0
20
40
60
80
Case temperature Tc (°C)
Radiation pattern
Wavelength
λ (nm)
I
– Ta
F
80
60
40
20
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
5
2007-10-01
TL(RE,RME,SE,OE,YE,GE)28C(F)
TLOE28C(F)
I
– V
I – I
V F
F
F
100
10000
1000
Ta = 25 °C
Ta = 25°C
50
30
10
5
3
100
10
1
1.6
1
10
100
1.7
1.8
1.9
2.0
2.1
2.2
2.3
Forward current
I
(mA)
Forward voltage
V
(V)
F
F
I
– Tc
Relative luminous intensity – Wavelength
V
1.0
0.8
0.6
0.4
0.2
0
3
1
I
= 20 mA
F
Ta = 25°C
0.5
0.3
0.1
−20
0
20
40
60
80
540
560
580
600
620
640
660
Case temperature Tc (°C)
Radiation pattern
Wavelength
λ (nm)
I
– Ta
F
80
60
40
20
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
6
2007-10-01
TL(RE,RME,SE,OE,YE,GE)28C(F)
TLYE28C(F)
I
– V
I – I
V F
F
F
100
10000
1000
Ta = 25 °C
Ta = 25 °C
50
30
10
5
3
100
10
1
1.6
1
10
100
1.7
1.8
1.9
2.0
2.1
2.2
2.3
Forward current
I
(mA)
Forward voltage
V
(V)
F
F
I
– Tc
Relative luminous intensity – Wavelength
V
3
1
1.0
0.8
I
= 20mA
F
Ta = 25 °C
0.6
0.4
0.2
0
0.5
0.3
0.1
540
560
580
600
620
640
660
−20
0
20
40
60
80
Case temperature Tc (°C)
Radiation pattern
Wavelength
λ (nm)
I
– Ta
F
80
60
40
20
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
7
2007-10-01
TL(RE,RME,SE,OE,YE,GE)28C(F)
TLGE28C(F)
I
– V
I – I
V F
F
F
100
3000
1000
Ta = 25 °C
Ta = 25 °C
50
30
10
100
5
3
10
1
1.6
1
10
100
1.7
1.8
1.9
2.0
2.1
2.2
2.3
Forward current
I
(mA)
Forward voltage
V
(V)
F
F
I
– Tc
Relative luminous intensity – Wavelength
V
10
1.0
0.8
I
= 20mA
F
Ta = 25 °C
5
3
0.6
0.4
0.2
0
1
0.5
0.3
0.1
520
540
560
580
600
620
640
−20
0
20
40
60
80
Case temperature Tc (°C)
Wavelength
λ (nm)
Radiation pattern
I
– Ta
F
80
60
40
20
0
0
20
40
60
80
100
120
Ambient temperature Ta (°C)
8
2007-10-01
TL(RE,RME,SE,OE,YE,GE)28C(F)
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
9
2007-10-01
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