TPC6108 [TOSHIBA]
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS4); 东芝场效应晶体管的硅P沟道MOS型（ U- MOS4 ）
| 型号： | TPC6108 |
| 厂家： | 
TOSHIBA |
| 描述： | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS4) |
| 文件： | 总4页 (文件大小：65K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPC6108
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)
TPC6108
TENTATIVE
Notebook PC Applications
Portable Equipment Applications
Unit: mm
•
•
•
•
•
Small footprint due to small and thin package
Low drain-source ON resistance: R = 50 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 7.4 S (typ.)
fs
= −10 µA (max) (V
Low leakage current: I
= −30 V)
DS
DSS
Enhancement-model: V = −0.8 to −2.0 V
th
(V
= −10 V, I = −1 mA)
DS
D
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
V
−30
−30
±20
−4.5
−18
2.2
V
V
V
DSS
Source
Drain
Drain
Gate
Drain-gate voltage (R
= 20 kΩ)
Drain
Drain
GS
DGR
Gate-source voltage
V
GSS
DC
Pulse
(Note 1)
(Note 1)
I
D
Drain current
A
I
JEDEC
―
DP
Drain power dissipation(t = 5 s) (Note 2a)
Drain power dissipation(t = 5 s) (Note 2b)
P
D
D
JEITA
―
W
P
0.7
TOSHIBA
2-3T1A
Single pulse avalanche energy
Avalanche current
(Note 4)
E
1.3
mJ
A
AS
AR
Weight: 0.011 g (typ.)
I
−2.25
Repetitive avalanche energy
Single-device value at dual operation
E
0.22
mJ
AR
(Note 2a, 3b, 5)
Circuit Configuration
Channel temperature
T
150
°C
°C
ch
6
5
4
Storage temperature range
T
−55~150
stg
Thermal Characteristics
Characteristics
Symbol
Max
56.8
Unit
1
2
3
Thermal resistance, channel to ambient(t = 5 s)
R
°C/W
th (ch-a)
th (ch-a)
(Note 2a)
Thermal resistance, channel to ambient(t = 5 s)
R
178.5
°C/W
(Note 2b)
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer
to the next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2004-10-28
TPC6108
TENTATIVE
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±16 V, V = 0 V
Min
Typ.
Max
Unit
I
I
V
V
±10
−10
µA
µA
GSS
GS
DS
DS
Drain cut-off current
= −30 V, V
= 0 V
= 0 V
= 20 V
DSS
GS
GS
GS
V
V
I
I
= −10 mA, V
= −10 mA, V
−30
−15
−0.8
(BR) DSS
(BR) DSX
D
D
Drain-source breakdown voltage
Gate threshold voltage
V
V
V
V
V
V
V
= −10 V, I = − 1 mA
−2.0
100
60
th
DS
GS
GS
DS
D
R
= −4.5 V, I = −2.2 A
75
50
DS (ON)
DS (ON)
D
Drain-source ON resistance
mΩ
S
R
= −10 V, I = −2.2 A
D
Forward transfer admittance
Input capacitance
|Y |
fs
= −10 V, I = −2.2 A
3.7
7.4
570
75
D
C
C
iss
V
= −10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
DS
rss
C
oss
85
Rise time
t
3.5
12
21
70
13
r
I
= −2.2 A
D
0 V
V
GS
V
OUT
−10 V
Turn-on time
Switching time
t
on
ns
Fall time
t
f
V
−15 V
−
DD
Turn-off time
t
<
off
Duty 1%, t = 10 µs
=
w
Total gate charge
Q
g
(gate-source plus gate-drain)
V
I
−24 V, V
= −4.5 A
= −10 V,
GS
−
DD
nC
Gate-source charge1
Q
1.8
2.5
D
gs1
Gate-drain (“miller”) charge
Q
gd
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain reverse current
Forward voltage (diode)
Pulse (Note 1)
I
−18
A
V
DRP
V
I
= −4.5 A, V = 0 V
GS
1.2
DSF
DR
2
2004-10-28
TPC6108
Marking (Note 5)
TENTATIVE
Lot No. (weekly code)
Lot code (month)
Part No.
(or abbreviation code)
S3H
Product-specific code
Pin #1
Lot code
(year)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: (a) Device mounted on a glass-epoxy board (a) (t = 5 s)
(b) Device mounted on a glass-epoxy board (b) (t = 5 s)
FR-4
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
25.4 × 25.4 × 0.8
(Unit: mm)
(a)
(b)
Note 3: V
= −24 V,T = 25°C (initial),L = 0.2 mH,R = 25 Ω,I
ch
= -2.25 A
AR
DD
G
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: ●on lower left of the marking indicates Pin 1.
3
2004-10-28
TPC6108
TENTATIVE
RESTRICTIONS ON PRODUCT USE
030619EAA
• The information contained herein is subject to change without notice.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patent or patent rights of
TOSHIBA or others.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
• TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced
and sold, under any law and regulations.
4
2004-10-28
相关型号：
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII)
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