TPC8013-H [TOSHIBA]
Silicon N Channel MOS Type (High speed U-MOS III); 硅N沟道MOS型（高速U- MOS III ）
| 型号： | TPC8013-H |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon N Channel MOS Type (High speed U-MOS III) |
| 文件： | 总7页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPC8013-H
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOS III)
TPC8013-H
High Speed and High Efficiency DC-DC Converters
Notebook PC Applications
Unit: mm
Portable Equipment Applications
·
·
·
·
·
·
·
Small footprint due to small and thin package
High speed switching
Small gate charge: Qg = 48 nc (typ.)
Low drain-source ON resistance: R
= 5.4 mΩ (typ.)
DS (ON)
High forward transfer admittance: |Y | = 25 S (typ.)
fs
= 10 µA (max) (V
Low leakage current: I
= 30 V)
DSS
DS
Enhancement-mode: V = 1.1 to 2.3 V (V
= 10 V, I = 1 mA)
th DS
D
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
V
V
30
30
V
V
V
Drain-source voltage
DSS
Drain-gate voltage (R
= 20 kW)
DGR
GS
JEDEC
JEITA
―
―
V
±20
15
Gate-source voltage
GSS
DC
(Note 1)
I
D
Drain current
A
Pulse (Note 1)
I
60
DP
TOSHIBA
2-6J1B
Drain power dissipation
Drain power dissipation
(t = 10 s)
(Note 2a)
(t = 10 s)
(Note 2b)
Weight: 0.080 g (typ.)
P
1.9
1.0
W
W
D
D
P
Circuit Configuration
Single pulse avalanche energy
(Note 3)
E
146
15
mJ
A
AS
8
1
7
6
3
5
Avalanche current
I
AR
Repetitive avalanche energy
E
0.19
mJ
AR
(Note 2a) (Note 4)
T
T
150
°C
°C
Channel temperature
ch
-55 to 150
Storage temperature range
stg
2
4
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with caution.
1
2002-03-25
TPC8013-H
Thermal Characteristics
Characteristics
Symbol
Max
65.8
Unit
Thermal resistance, channel to ambient
R
°C/W
th (ch-a)
(t = 10 s)
(Note 2a)
Thermal resistance, channel to ambient
R
125
°C/W
th (ch-a)
(t = 10 s)
(Note 2b)
Marking (Note 5)
TPC8013
TYPE
H
※
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4
25.4 ´ 25.4 ´ 0.8
(unit: mm)
FR-4
25.4 ´ 25.4 ´ 0.8
(unit: mm)
(a)
(b)
Note 3: V
DD
= 24 V, T = 25°C (initial), L = 0.5 mH, R = 25 W, I = 15 A
ch AR
G
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5: · on lower left of the marking indicates Pin 1.
※ shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of
manufacture: January to December are denoted by letters A to L respectively.)
2
2002-03-25
TPC8013-H
Electrical Characteristics (Ta = 25°C)
Characteristics
Gate leakage current
Symbol
Test Condition
= ±16 V, V = 0 V
Min
Typ.
Max
Unit
I
I
V
V
¾
¾
¾
¾
±10
10
¾
mA
mA
GSS
GS
DS
DS
Drain cut-OFF current
= 30 V, V
= 0 V
DSS
GS
GS
GS
V
V
I
I
= 10 mA, V
= 10 mA, V
= 0 V
30
15
1.1
¾
¾
(BR) DSS
(BR) DSX
D
D
Drain-source breakdown voltage
Gate threshold voltage
V
V
= -20 V
¾
¾
V
V
V
V
V
= 10 V, I = 1 mA
¾
2.3
9.5
6.5
¾
th
DS
GS
GS
DS
D
= 4.5 V, I = 7.5 A
6.6
5.4
25
D
Drain-source ON resistance
R
mW
S
DS (ON)
= 10 V, I = 7.5 A
¾
D
Forward transfer admittance
Input capacitance
|Y |
fs
= 10 V, I = 7.5 A
12.5
¾
D
C
iss
2380
410
980
¾
V
= 10 V, V
= 0 V, f = 1 MHz
GS
pF
Reverse transfer capacitance
Output capacitance
C
rss
¾
¾
DS
C
oss
¾
¾
Rise time
t
¾
¾
¾
¾
9.8
21
15
60
¾
¾
¾
¾
r
I
= 7.5 A
D
10 V
0 V
V
GS
V
OUT
Turn-ON time
Switching time
t
on
ns
Fall time
t
f
~
V
15 V
-
DD
Turn-OFF time
t
off
<
Duty 1%, t = 10 ms
w
~
V
V
24 V, V
24 V, V
= 10 V, I = 15 A
¾
¾
¾
¾
¾
46
26
¾
¾
¾
¾
¾
-
DD
DD
GS
GS
D
Total gate charge
Q
g
(gate-source plus gate-drain)
~
-
= 5 V, I = 15 A
D
nC
Gate-source charge 1
Gate-drain (“miller”) charge
Gate switch charge
Q
Q
7.2
gs1
~
-
V
24 V, V
= 10 V, I = 15 A
Q
12.2
15.6
DD
GS
D
gd
SW
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Drain reverse current Pulse (Note 1)
Forward voltage (diode)
Symbol
Test Condition
Min
Typ.
Max
Unit
I
¾
¾
¾
¾
¾
60
A
V
DRP
V
I
= 15 A, V = 0 V
GS
-1.2
DSF
DR
3
2002-03-25
TPC8013-H
I
– V
I – V
D DS
D
DS
10
8
20
16
12
8
Common source
Common source
10
10
4.5
3.1
4.5
2.9
Ta = 25°C, pulse test
Ta = 25°C, pulse test
3
2.8
2.9
2.75
2.7
6
2.8
2.65
2.6
4
2
0
2.7
2.6
4
2.5
2.4 V
V
GS
= 2.4 V
V
GS
1.6
= 2.4 V
0
0
0.2
0.4
0.6
0.8
1.0
0
0.4
0.8
1.2
2.0
Drain-source voltage
V
(V)
Drain-source voltage
V
(V)
DS
DS
I
– V
V
– V
GS
D
GS
DS
50
40
30
20
10
0
1
0.8
0.6
0.4
0.2
0
Common source
Ta = 25°C
Pulse test
Common source
= 10 V
V
DS
Pulse test
I
= 15 A
D
25
7.5
100
2
3.8
Ta = -55°C
0
3
4
5
6
0
2
4
6
8
10
12
1
Gate-source voltage
V
(V)
Gate-source voltage
V
D
(V)
GS
GS
|Y | – I
R
– I
fs
D
DS (ON)
100
10
1
100
10
1
Common source
Ta = 25°C
Pulse test
Ta = -55°C
25
100
V
= 4.5 V
GS
10
Common source
= 10 V
Pulse test
V
DS
0.1
0.1
1
10
(A)
100
0.1
1
10
30
Drain current
I
D
(A)
Drain current
I
D
4
2002-03-25
TPC8013-H
R
– Ta
I
– V
DR
DS (ON)
DS
12
10
8
100
10
1
5
3
10
I
= 15, 7.5, 3.8
D
V
GS
= 0 V
V
GS
= 4.5 V
1
6
I
= 15, 7.5, 3.8
D
4
10
2
Common source
Ta = 25°C
Common source
Pulse test
Pulse test
0
0.1
-80
-40
0
40
80
120
160
100
200
0
-0.2
-0.4
-0.6
-0.8
-1
Ambient temperature Ta (°C)
Drain-source voltage
V
(V)
DS
Capacitance – V
V
– Ta
th
DS
10000
1000
100
2.5
2
C
iss
1.5
1
C
oss
C
rss
Common source
= 10 V
DS
= 1 mA
0.5
Common source
V
V
= 0 V
GS
I
D
f = 1 MHz
Ta = 25°C
Pulse test
10
0
0.1
1
10
-80
-40
0
40
80
120
160
Drain-source voltage
V
(V)
Ambient temperature Ta (°C)
DS
P
– Ta
Dynamic input/output characteristics
D
2
1.6
1.2
0.8
0.4
0
40
30
20
10
16
Common source
Ta = 25°C
= 15 A
(1) Device mounted on a
glass-epoxy board (a)
(Note 2a)
(2) Device mounted on a
glass-epoxy board (b)
(Note 2b)
(1)
(2)
14
12
10
8
I
D
Pulse test
V
DD
= 24 V
6
t = 10 s
V
DD
= 24 V
12
V
GS
V
DS
6
12
4
6
2
0
0
0
50
100
150
0
10
20
30
40
50
60
Ambient temperature Ta (°C)
Total gate charge
Q
(nC)
g
5
2002-03-25
TPC8013-H
r
th
- t
w
1000
(1) Device mounted on a glass-epoxy board (a)
(Note 2a)
(2)
(1)
(2) Device mounted on a glass-epoxy board (b)
(Note 2b)
t = 10 s
100
10
1
Single pulse
0.1
0.001
0.01
0.1
1
10
100
1000
Pulse width
t
w
(S)
Safe operating area
100
10
I
max (pluse) *
D
1 ms*
10 ms*
1
0.1
*
Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
V
max
DSS
0.01
0.01
0.1
1
10
(V)
100
Drain-source voltage
V
DS
6
2002-03-25
TPC8013-H
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
7
2002-03-25
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