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TPCP8902(TE85L,F,M [TOSHIBA]

Power Bipolar Transistor;
TPCP8902(TE85L,F,M
型号： TPCP8902(TE85L,F,M
厂家： TOSHIBA    TOSHIBA
描述：

Power Bipolar Transistor
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中文：  中文翻译
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TPCP8902  
TOSHIBA Transistor Silicon NPN / PNP Epitaxial Type (PCT Process)  
TPCP8902  
Portable Equipment Applications  
Unit: mm  
Switching Applications  
0.33±0.05  
A
M
0.05  
5
8
•
•
Small footprint due to small and thin package  
High DC current gain : PNP  
: NPN  
h
= 200 to 500 (I = −0.2 A)  
C
FE  
FE  
h
= 200 to 500 (I = 0.2 A)  
C
0.475  
1
4
B
B
M
0.05  
•
•
Low collector-emitter saturation : PNP V  
: NPN V  
= −0.20 V (max)  
0.65  
CE (sat)  
CE (sat)  
2.9±0.1  
A
= 0.14 V (max)  
0.8±0.05  
High-speed switching : PNP t = 40 ns (typ.)  
f
S
0.025  
: NPN t = 45 ns (typ.)  
f
+0.1  
S
0.28  
0.17±0.02  
-0.11  
+0.13  
-0.12  
1.12  
1.12  
Absolute Maximum Ratings (Ta = 25°C)  
+0.13  
-0.12  
Rating  
Characteristics  
Collector-base voltage  
Symbol  
Unit  
+0.1  
0.28  
PNP  
−30  
−30  
−30  
−7  
NPN  
60  
-0.11  
1.Emitter1  
5.Collector2  
6.Collector2  
7.Collector1  
8.Collector1  
2.Base1  
3.Emitter2  
4.Base2  
V
V
V
V
A
CBO  
V
50  
CEX  
CEO  
EBO  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
JEDEC  
JEITA  
―
―
V
V
30  
7
TOSHIBA  
2-3V1C  
DC (Note 1)  
I
−2.0  
−8.0  
2.0  
8.0  
C
Pulse (Note 1 )  
I
CP  
Weight: 0.017 g (typ.)  
Base current  
I
−0.5  
0.5  
A
B
Single-device  
operation  
1.67  
Collector power  
dissipation (t = 10s)  
PC (Note 2)  
W
Single-device  
value at dual  
operation  
0.91  
0.89  
Single-device  
operation  
Collector power  
dissipation (DC)  
P
(Note 2)  
W
C
Single-device  
value at dual  
operation  
0.52  
150  
Junction temperature  
T
j
°C  
°C  
Storage temperature range  
T
−55 to 150  
stg  
Note 1: Please use devices on condition that the junction temperature is below 150℃.  
Icp=±8A (@ t≦100μs)  
Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)  
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly  
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute  
maximum ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test  
report and estimated failure rate, etc).  
Start of commercial production  
2006-08  
1
2013-11-01  
TPCP8902  
Figure 1. Circuit configuration (top view)  
Figure 2. Marking (Note 4)  
8
7
6
5
8
7
6
5
Type  
8902  
※
1
2
3
4
1
2
3
4
Q1  
Q2  
Q1：NPN Q2：PNP  
Lot No.  
Note 4: ● on lower left on the marking indicates Pin 1.  
※ Weekly code: (Three digits)  
(Weekly code)  
Week of manufacture  
(01 for first week of year, continues up to 52 or 53)  
Year of manufacture  
(One low-order digits of calendar year)  
Electrical Characteristics (Ta = 25°C)  
PNP  
Characteristics  
Symbol  
Test Condition  
= −30 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
V
V
⎯
⎯
⎯
⎯
−100  
−100  
⎯
nA  
nA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= −7 V, I = 0  
C
EBO  
(BR) CEO  
Collector-emitter breakdown voltage  
V
I
= −10 mA, I = 0  
−30  
200  
125  
40  
⎯
⎯
C
B
h
FE  
h
FE  
h
FE  
(1)  
(2)  
(3)  
V
V
V
= −2 V, I = −0.2 A  
⎯
500  
⎯
CE  
CE  
CE  
C
DC current gain  
= −2 V, I = −0.6 A  
⎯
C
= −2 V, I = −2.0 A  
⎯
⎯
C
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector output capacitance  
Rise time  
V
I
I
= −0.6 A, I = −20 mA  
⎯
−0.20  
−1.10  
⎯
V
V
CE (sat)  
BE (sat)  
C
C
B
V
= −0.6 A, I = −20 mA  
⎯
⎯
B
C
V
= −10 V, I = 0, f = 1MHz  
⎯
16.5  
40  
280  
40  
pF  
ob  
CB  
E
t
⎯
⎯
r
See Figure 3 circuit diagram  
Switching time  
V
≒−18 V, R = 30 Ω  
ns  
Storage time  
Fall time  
t
⎯
⎯
CC  
L
stg  
I
= I = 20 mA  
B1  
B2  
t
f
⎯
⎯
NPN  
Characteristics  
Symbol  
Test Condition  
= 60 V, I = 0  
Min  
Typ.  
Max  
Unit  
Collector cut-off current  
I
V
V
⎯
⎯
⎯
⎯
100  
100  
⎯
nA  
nA  
V
CBO  
CB  
EB  
E
Emitter cut-off current  
I
= 7 V, I = 0  
C
EBO  
(BR) CEO  
Collector-emitter breakdown voltage  
V
I
= 10 mA, I = 0  
30  
200  
125  
40  
⎯
⎯
C
B
h
FE  
h
FE  
h
FE  
(1)  
(2)  
(3)  
V
V
V
= 2 V, I = 0.2 A  
⎯
500  
⎯
CE  
CE  
CE  
C
DC current gain  
= 2 V, I = 0.6 A  
⎯
C
= 2 V, I = 2.0 A  
⎯
⎯
C
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Collector output capacitance  
Rise time  
V
I
I
= 0.6 A, I = 20 mA  
⎯
0.14  
1.10  
⎯
V
V
CE (sat)  
BE (sat)  
C
C
B
V
= 0.6 A, I = 20 mA  
⎯
⎯
B
C
V
= 10 V, I = 0, f = 1MHz  
⎯
14  
45  
580  
45  
pF  
ob  
CB  
E
t
⎯
⎯
r
See Figure 4 circuit diagram  
Switching time  
V
≒18 V, R = 30 Ω  
ns  
Storage time  
Fall time  
t
⎯
⎯
CC  
L
stg  
I
= I = 20 mA  
B1  
B2  
t
f
⎯
⎯
2
2013-11-01  
TPCP8902  
Figure 3. Switching Time Test Circuit & Timing Chart  
Figure 4. Switching Time Test Circuit & Timing Chart  
V
V
CC  
CC  
20μs  
20μs  
RL  
Output  
RL  
Output  
IB1  
IB2  
IB1  
IB1  
IB2  
Duty cycle ＜1%  
IB1  
Input  
Input  
Duty cycle ＜1%  
IB2  
IB2  
3
2013-11-01  
TPCP8902  
PNP  
I
– V  
CE  
C
h
– I  
C
FE  
1000  
-2  
Ta = 100°C  
-10  
-8  
-20  
-1.6  
-1.2  
300  
100  
25°C  
-6  
−55°C  
-5  
-4  
-0.8  
-0.4  
-3  
-2  
30  
10  
Common emitter  
V = −2 V  
Common emitter  
Ta = 25°C  
Single nonrepetitive pulse  
I
=− 1 mA  
B
CE  
Single nonrepetitive pulse  
0
0
-0.001  
-0.01  
-0.1  
-1  
-10  
-0.4  
-0.8  
-1.2  
-1.6  
-2  
Collector current  
I
(A)  
C
Collector−emitter voltage  
V
(V)  
CE  
V
– I  
C
V
– I  
CE (sat)  
BE (sat)  
C
-1  
-10  
Common emitter  
/I = 30  
Single nonrepetitive pulse  
Common emitter  
I /I = 30  
C
I
C
B
B
Single nonrepetitive pulse  
-3  
-1  
-0.3  
-0.1  
Ta = -55°C  
100°C  
25°C  
−55°C  
25°C  
-0.3  
-0.1  
-0.03  
-0.01  
Ta = 100°C  
-0.01  
-0.1  
-1  
-10  
-0.001  
-0.001  
-0.01  
-0.1  
-1  
-10  
Collector current  
I
(A)  
C
Collector current  
I
(A)  
C
Safe operating area  
-10  
I
I
max (pulse) *  
C
C
10μs*  
max (pulse) *  
I
– V  
100μs*  
C
BE  
-2  
Common emitter  
= −2 V  
Single nonrepetitive  
pulse  
I
max (continuous)*  
C
V
CE  
1 ms*  
-1.6  
-1.2  
-0.8  
DC operation  
Ta = 25°C  
-1  
10 ms*  
10 s*  
100 ms*  
−55°C  
Ta = 100°C  
*: Single nonrepetitive pulse  
Ta = 25°C  
-0.1  
Note that the curves for 100 ms, 10 s and  
DC operation will be different when the  
devices aren’t mounted on an FR4 board  
(glass-epoxy, 1.6 mm thick, Cu area: 645  
mm2).  
Single-device operation  
These characteristic curves must be derated  
linearly with increase in temperature.  
25°C  
-0.4  
0
-0.01  
0
-0.4  
-0.8  
-1.2  
-1.6  
-0.1  
-1  
-10  
-100  
Collector−emitter voltage  
V
(V)  
CE  
Base−emitter voltage  
V
(V)  
BE  
4
2013-11-01  
TPCP8902  
NPN  
I
– V  
CE  
C
h
– I  
C
FE  
2
1000  
10  
20  
Ta = 100°C  
8
1.6  
300  
100  
6
25°C  
1.2  
0.8  
0.4  
0
5
4
−55°C  
3
2
30  
10  
Common emitter  
= 2 V  
Common emitter  
Ta = 25°C  
V
I
= 1 mA  
CE  
Single nonrepetitive pulse  
B
Single nonrepetitive pulse  
1.2 1.6  
0
0.001  
0.01  
0.1  
1
0.4  
0.8  
2
10  
Collector current  
I
(A)  
C
Collector−emitter voltage  
V
(V)  
CE  
V
– I  
C
V
– I  
C
CE (sat)  
BE (sat)  
1
10  
Common emitter  
/I = 30  
Single nonrepetitive pulse  
Common emitter  
I /I = 30  
C
I
C
B
B
Single nonrepetitive pulse  
0.3  
0.1  
3
1
Ta = -55°C  
100°C  
25°C  
−55°C  
0.03  
0.01  
0.3  
0.1  
Ta = 100°C  
25°C  
0.001  
0.01  
0.1  
1
10  
0.001  
0.01  
0.1  
1
10  
Collector current  
I
(A)  
C
Collector current  
I
(A)  
C
Safe operating area  
I
– V  
C
BE  
10  
I
max (pulse) *  
max (pulse) *  
C
10μs*  
2
Common emitter  
= 2 V  
Single nonrepetitive pulse  
I
C
V
CE  
100μs*  
1.6  
1.2  
I
max (continuous)*  
C
1 ms*  
1
DC operation  
Ta = 25°C  
10 ms*  
−55°C  
Ta = 100°C  
0.8  
0.4  
10 s*  
100 ms*  
*: Single nonrepetitive pulse  
Ta = 25°C  
25°C  
0.1  
Note that the curves for 100 ms, 10 s and  
DC operation will be different when the  
devices aren’t mounted on an FR4 board  
(glass-epoxy, 1.6 mm thick, Cu area: 645  
mm2).  
0
0
0.4  
0.8  
1.2  
1.6  
Single-device operation  
These characteristic curves must be derated  
linearly with increase in temperature.  
Base−emitter voltage  
V
(V)  
BE  
0.01  
0.1  
1
10  
100  
Collector−emitter voltage  
V
(V)  
CE  
5
2013-11-01  
TPCP8902  
r
th  
– t  
w
1000  
100  
10  
Curves apply only to limited areas of thermal resistance.  
Single nonrepetitive pulse Ta = 25°C  
Mounted on an FR4 board (glass-epoxy; 1.6 mm thick; Cu area, 645 mm2)  
1
0.001  
0.01  
0.1  
1
10  
1000  
100  
Pulse width  
t
(s)  
w
Permissible Power Dissipation for Simultaneous  
Operation  
1
0.8  
0.6  
0.4  
DC operation  
Ta = 25°C  
0.2  
0
Mounted on an FR4 board glass epoxy,  
1.6 mm thick, Cu area: 645 mm2)  
0
0.2  
0.4  
0.6  
0.8  
1
Permissible power dissipation for Q1  
PC (W)  
Collector power dissipation at the single-device operation is 0.89W.  
Collector power dissipation at the single-device value at dual  
operation is 0.52W.  
Collector power dissipation at the dual operation is set to 1.04W.  
6
2013-11-01  
TPCP8902  
RESTRICTIONS ON PRODUCT USE  
•
•
•
Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information  
in this document, and related hardware, software and systems (collectively “Product”) without notice.  
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with  
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.  
Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are  
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and  
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily  
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must  
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,  
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA  
Semiconductor Reliability Handbook” and (b) the instructions for the application that Product will be used with or for. Customers are  
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the  
appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any  
information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other  
referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO  
LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR APPLICATIONS.  
•
Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring  
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.  
Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or  
reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious  
public impact (“Unintended Use”). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used  
in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling  
equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric  
power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this  
document.  
•
•
Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part.  
Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any  
applicable laws or regulations.  
•
•
The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any  
infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to  
any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise.  
ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE  
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY  
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR  
LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND  
LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO  
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS  
FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT.  
•
•
Do not use or otherwise make available Product or related software or technology for any military purposes, including without  
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile  
technology products (mass destruction weapons). Product and related software and technology may be controlled under the  
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product  
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.  
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.  
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,  
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of  
noncompliance with applicable laws and regulations.  
7
2013-11-01  

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