TPS616_07 [TOSHIBA]
Silicon NPN Epitaxial Planar; NPN硅外延平面
| 型号： | TPS616_07 |
| 厂家： | 
TOSHIBA |
| 描述： | Silicon NPN Epitaxial Planar |
| 文件： | 总6页 (文件大小：210K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TPS616(F)
TOSHIBA Phototransistor Silicon NPN Epitaxial Planar
TPS616(F)
Lead(Pb)-Free
Floppy Disk Drive
VCR
Unit in mm
Position Detector Of Home Electric Equipment
Opto-electronic Switch
•
•
•
•
φ3.1mm epoxy resin package. (black)
Light current: I = 10μA (min.) at E = 0.1mW/cm2
L
Half value angle: θ1/2 = ±30° (typ.)
Protected from external light by black mold packaging.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-emitter voltage
Emitter-collector voltage
Collector current
V
V
30
5
V
V
CEO
ECO
TOSHIBA
0−3D1
Weight: 0.12g (typ.)
I
20
75
mA
mW
C
Collector power dissipation
P
C
Collector power dissipation
derating (Ta > 25°C)
Pin Connection
ΔP /°C
−1
mW/°C
C
Operating temperature range
Storage temperature range
T
−30~85
°C
°C
opr
1
T
−30~100
stg
1 . Emitter
2 . Collector
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
2
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
2007-10-01
1
TPS616(F)
Opto-electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
= 24V
Min.
⎯
Typ.
0.01
⎯
Max.
0.1
Unit
μA
Dark current
Light current
I (I
D
)
V
V
CEO
CE
CE
I
= 3V, E = 0.1mW / cm2
(Note 1)
L
10
75
μA
(Note 2)
Collector-emitter saturation
voltage
I
= 5μA, E = 0.1mW / cm2
C
V
⎯
0.2
0.4
V
CE(sat)
(Note 1)
peak sensitivity wavelength
Half value angle
λ
⎯
⎯
⎯
⎯
900
±30
⎯
⎯
nm
°
P
1
2
θ
Rise time
Fall time
t
V
= 10V,I = 1mA
⎯
⎯
9
⎯
⎯
r
CC
C
Switching time
μs
R = 1kΩ
t
10
L
f
Note 1: Color temperature = 2870K,standard tungsten lamp.
Note 2: I classification A: 10~25μA, B: 17~42.5μA, C: 30~75μA, AB: 10~42.5μA, BC: 17~75μA
L
Precaution
Please be careful of the followings.
1. Soldering temperature: 260°C max. Soldering time: 3s max.
(Soldering portion of lead: Above 1.5mm from the body of the device)
2. If the lead is formed, the lead should be formed at a distance of 2mm from the body of the device.
Soldering shall be performed after lead forming.
2007-10-01
2
TPS616(F)
Fig.1 Switching time test circuit
Input
V
Input pulse
CC
0
TLN119(F)
TPS616(F)
Output
(GaAs LED)
90%
R
R
L
Output pulse
0
10%
t
f
t
r
I
– Ta
(Typ.)
D
P
– Ta
C
V
= 24 V
CE
80
60
1
E = 0
10-1
40
20
0
10-2
10-3
0
0
20
40
60
80
100
20
40
60
80
100
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
I – E
L
(Typ.)
I – V
L
(Typ.)
CE
300
100
V
= 3 V
CE
Ta = 25°C
0.6
Ta = 25°C
Color temperature
250
200
150
= 2870K
0.5
0.4
50
30
0.3
0.2
10
100
50
0
5
3
E=0.1mW / cm2
1
0
2
4
6
8
10
1
0.01
0.03 0.05
0.1
0.3 0.5
Radiant incidence
E
(mW / cm2)
Collector-emitter voltage
V
(V)
CE
2007-10-01
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TPS616(F)
Directional Sensitivity Characteristic
(Typ.)
Frequency Characteristics
(Typ.)
(Ta = 25°C)
12
8
V
= 5 V
CC
Ta = 25°C
Light source = TLN119(F)
(GaAs LED)
4
Radiation angle
0°
10°
10°
0
20°
20°
30°
30°
R =100Ω
L
40°
40°
-4
-8
50°
60°
70°
80°
50°
60°
70°
80°
10kΩ 5kΩ 1kΩ
500Ω
-12
-16
-20
90°
1.0
90°
0.8
0.6
1
3
5
10
30 50 100
300 500 1000
0.4
0
0.2
Relative sensitivity
Frequency
f
(kHz)
Coupling Characteristics With
TLN119(F)
Switching characteristics (Typ.)
3000
1000
Ta=25°C
Input
Vcc=
10V
Output
pulse
90%
10%
Output
TLN119(F)
Input
pulse
500
300
(GaAs LED)
R
R
L
TLN119(F) I =3.0mW/sr
E
t
t
f
r
200
100
1.5
tr(RL=10kΩ)
0.5
100
tf(RL=10kΩ)
50
30
50
30
Ta = 25°C
TPS615(F) Using sample
tf(RL=1kΩ)
10
10
5
:I = 28.1μA at V
= 3V
CE
L
tr(RL=1kΩ)
tf(RL=100Ω)
E = 0.1mW/cm2
5
3
I
C
3V
3
tr(RL=100Ω)
d
TLN119(F)
TPS615(F)
1
1
0.02
0.05
0.1
0.3 0.5
1
3
5
1
3
5
10
30
50
100
200
Collector current
I
C
(mA)
Distance
d
(mm)
2007-10-01
4
TPS616(F)
Spectral Response
(Typ.)
120
Ta = 25°C
100
80
60
40
20
0
0
200
400
600
800
1000
1200
Wavelength
λ
(nm)
2007-10-01
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TPS616(F)
RESTRICTIONS ON PRODUCT USE
20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
2007-10-01
6
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