QPD1022S2 [TRIQUINT]
10W, 32V, DC â 12 GHz, GaN RF Transistor;
| 型号： | QPD1022S2 |
| 厂家： | 
TRIQUINT SEMICONDUCTOR |
| 描述： | 10W, 32V, DC â 12 GHz, GaN RF Transistor |
| 文件： | 总23页 (文件大小：2544K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
General Description
The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC
HEMT which operates from DC to 12 GHz. This wideband
device is a single stage unmatched power amplifier
transistor in an over-molded plastic package. The wide
bandwidth of the QPD1022 makes it suitable for many
different applications from DC to 12 GHz.
The device is housed in an industry-standard 3 x 3 mm
surface mount QFN package.
16 Pin QFN (3 xꢀ3ꢀxꢀ0.85ꢀmm)
Lead-free and ROHS compliant
Product Features
Frequency: DC to 12 GHz
Output Power (P3dB): 11 W1
Linear Gain: 24.0 dB1
Evaluation boards are available upon request.
Typical PAE3dB: 68.8 %1
Operating Voltage: 32 V
Low thermal resistance package
CW and Pulse capable
3 x 3 mm package
Functional Block Diagram
Note 1: @ 2 GHz (Loadpull)
Applications
Military radar
Civilian radar
Land mobile and military radio communications
Test instrumentation
Wideband or narrowband amplifiers
Jammers
Ordering info
Part No.
ECCN Description
QPD1022S2
QPD1022SQ
QPD1022SR
EAR99 2 Piece Sample Bag
EAR99 25 Piece Sample Bag
EAR99 100 Piece 7” Reel
QPD1022EVB01 EAR99 3.1 – 3.5 GHz EVB
Rev. A
Disclaimer: Subject to change without notice
- 1 of 23 -
© 2017 Qorvo
www.qorvo.com
QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Absolute Maximum Ratings2
Parameter
Rating
Units
Breakdown Voltage,BVDG
Gate Voltage Range, VG
Drain Current, ID
100
-7 – +2
2.4
V
V
A
1
Gate Current Range, IG
2.8
mA
W
Power Dissipation, CW, PDISS
17.5
RF Input Power at 3.3 GHz, CW, 50ꢁΩ, T = 25ꢀ°C
Channel Temperature, TCH
+29
dBm
°C
°C
°C
275
320ꢁ
Mounting Temperature (30ꢀSeconds)
Storage Temperature
−65 to +150
Notes:
1. At Channel temperature of 200°C.
2. Operation of this device outside the parameter ranges given above may cause permanent damage.
Recommended Operating Conditions1
Parameter
Min
−40
+12
–
Typ
+25
+32
50
Max
Units
ꢁ°C
V
Operating Temp. Range
Drain Voltage Range, VD
Drain Bias Current, IDQ
Drain Current, ID
+85
+40
–
mA
mA
V
–
610
−2.8
–
–
4
Gate Voltage, VG
–
–
Channel Temperature (TCH)
Power Dissipation, CW (PD)2
Power Dissipation, Pulsed (PD)2, 3
–
225
13.8
18.0
°C
–
–
W
–
–
W
Notes:
1. Electrical performance is measured under conditions noted in the electrical specifications table. Specifications are not
guaranteed over all recommended operating conditions.
2. Back plane of package at 85 °C
3. Pulse Width = 100 us, Duty Cycle = 20%
4. To be adjusted to desired IDQ
Rev. A
© 2017 Qorvo
Disclaimer: Subject to change without notice
- 2 of 23 -
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QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Pulsed Characterization – Load Pull Performance – Power Tuned1
Parameters
Frequency, F
Linear Gain, GLIN
Typical Values
Unit
GHz
dB
2
3
4
6
9
10
24.0
21.9
19.7
16.1
12.2
10.7
Output Power at 3dB
40.4
40.0
40.3
40.4
40.0
39.9
dBm
compression point, P3dB
Power-Added-Efficiency at 3dB
compression point, PAE3dB
Gain at 3dB compression point
Notes:
58.0
21.0
52.8
18.9
57.0
16.7
54.5
13.1
45.0
9.2
40.0
7.7
%
dB
1. Test conditions unless otherwise noted: VD = +32ꢁV, IDQ = 50ꢁmA, Temp = +25ꢁ°C
Pulsed Characterization – Load Pull Performance – Efficiency Tuned1
Parameters
Frequency
Typical Values
Unit
GHz
dB
2
3
4
6
9
10
Linear Gain, GLIN
25.6
23.4
21.3
16.9
12.9
11.9
Output Power at 3dB
compression point, P3dB
Power-Added-Efficiency at 3dB
compression point, PAE3dB
Gain at 3dB compression point,
G3dB
36.8
68.8
22.6
39.0
66.
38.3
69.4
18.3
39.4
61.2
13.9
39.4
50.3
9.9
38.7
46.3
8.9
dBm
%
20.4
dB
Notes:
1- Test conditions unless otherwise noted: VD = +32ꢁV, IDQ = 50ꢁmA, Temp = +25ꢁ°C
RF Characterization – 3.1 – 3.5 GHz EVB Performance At 3.3 GHz1
Parameter
Linear Gain, GLIN
Min
Typ
16.3
39.9
58.7
13.3
Max
Units
ꢁdB
–
–
–
–
–
–
–
–
Output Power at 3dB compression point, P3dB
Drain Efficiency at 3dB compression point, DEFF3dB
dBm
%
Gain at 3dB compression point, G3dB
Notes:
dB
1. VD = +32ꢁV, IDQ = 50ꢁmA, Temp = +25ꢁ°C, Pulse Width = 100 us, Duty Cycle = 20%
RF Characterization – Mismatch Ruggedness at 3.3 GHz1,2
Symbol Parameter
dB Compression
Typical
VSWR
Notes:
Impedance Mismatch Ruggedness
3
ꢁ10:1
1. Test conditions unless otherwise noted: TA = 25 °C, VD = 32 V, IDQ = 50 mA
2. Driving input power is determined at pulsed compression under matched condition at EVB output connector.
Rev. A
Disclaimer: Subject to change without notice
- 3 of 23 -
© 2017 Qorvo
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QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Median Lifetime1
Note:
1- For pulsed signals, average lifetime is average lifetime at maximum channel temperature divided by duty cycle.
Rev. A
© 2017 Qorvo
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QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Thermal and Reliability Information - CW
Parameter
Conditions
Values
8.9
Units
°C/W
°C
Thermal Resistance, FEA (θJC) (1) (3)
(1)
Channel Temperature, FEA (TCH
Median Lifetime (TM) (1)
Thermal Resistance, IR (θJC) (2) (3)
)
153
85 °C Case
7.6 W Pdiss, CW
2.0E9
6.1 (2)
131 (2)
9.3
Hrs
°C/W
°C
(2)
Channel Temperature, IR (TCH
Thermal Resistance, FEA (θJC) (1) (3)
)
°C/W
°C
(1)
Channel Temperature, FEA (TCH
Median Lifetime (TM) (1)
Thermal Resistance, IR (θJC) (2) (3)
)
179
85 °C Case
10.1 W Pdiss, CW
1.0E8
6.2 (2)
148 (2)
9.8
Hrs
°C/W
°C
(2)
Channel Temperature, IR (TCH
Thermal Resistance, FEA (θJC) (1) (3)
)
°C/W
°C
(1)
Channel Temperature, FEA (TCH
Median Lifetime (TM) (1)
Thermal Resistance, IR (θJC) (2) (3)
)
209
85 °C Case
12.6 W Pdiss, CW
6.0E6
6.4 (2)
166 (2)
10.4
Hrs
°C/W
°C
(2)
Channel Temperature, IR (TCH
Thermal Resistance, FEA (θJC) (1) (3)
)
°C/W
°C
(1)
Channel Temperature, FEA (TCH
Median Lifetime (TM) (1)
Thermal Resistance, IR (θJC) (2) (3)
)
242
85 °C Case
15.1 W Pdiss, CW
4.0E5
6.6 (2)
185 (2)
Hrs
°C/W
°C
(2)
Channel Temperature, IR (TCH
)
Notes:
1. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability. Unless otherwise noted, all thermal
references are FEA.
2. Infrared (IR) thermal values are for reference only and can not be used to determine performance or reliability.
3. Thermal resistance measured to backside of package.
Rev. A
Disclaimer: Subject to change without notice
- 5 of 23 -
© 2017 Qorvo
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QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Thermal and Reliability Information - Pulsed
Parameter
Conditions
Values
6.9
Units
°C/W
°C
Thermal Resistance, FEA (θJC) (1) (3)
(1)
Channel Temperature, FEA (TCH
Median Lifetime (TM) (1)
Thermal Resistance, IR (θJC) (2) (3)
)
138
85 °C Case
7.6 W Pdiss, Pulsed 100us 20% DC
4.0E10
4.7 (2)
121 (2)
7.0
Hrs
°C/W
°C
(2)
Channel Temperature, IR (TCH
Thermal Resistance, FEA (θJC) (1) (3)
)
°C/W
°C
(1)
Channel Temperature, FEA (TCH
Median Lifetime (TM) (1)
Thermal Resistance, IR (θJC) (2) (3)
)
156
85 °C Case
10.1 W Pdiss, Pulsed 100us 20% DC
6.0E9
4.7 (2)
133 (2)
7.2
Hrs
°C/W
°C
(2)
Channel Temperature, IR (TCH
Thermal Resistance, FEA (θJC) (1) (3)
)
°C/W
°C
(1)
Channel Temperature, FEA (TCH
Median Lifetime (TM) (1)
Thermal Resistance, IR (θJC) (2) (3)
)
176
85 °C Case
12.6 W Pdiss, Pulsed 100us 20% DC
8.0E8
4.8 (2)
146 (2)
7.5
Hrs
°C/W
°C
(2)
Channel Temperature, IR (TCH
Thermal Resistance, FEA (θJC) (1) (3)
)
°C/W
°C
(1)
Channel Temperature, FEA (TCH
Median Lifetime (TM) (1)
Thermal Resistance, IR (θJC) (2) (3)
)
198
85 °C Case
15.1 W Pdiss, Pulsed 100us 20% DC
9.5E7
4.9 (2)
159 (2)
Hrs
°C/W
°C
(2)
Channel Temperature, IR (TCH
)
Notes:
1. Finite Element Analysis (FEA) thermal values shall be used to determine performance and reliability. Unless otherwise noted, all thermal
references are FEA.
2. Infrared (IR) thermal values are for reference only and can not be used to determine performance or reliability.
3. Thermal resistance measured to backside of package.
Rev. A
Disclaimer: Subject to change without notice
- 6 of 23 -
© 2017 Qorvo
www.qorvo.com
QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Load Pull Smith Charts1, 2
Notes:
1. Vd = 32 V, IDQ = 50 mA, Pulsed signal with 100 us pulse width and 20 % duty cycle.
2. See page 18 for load pull and source pull reference planes.
2 GHz, Load-pull
Zs(1fo) = 11.09-1.84i
Max Power is 40.4dBm
at Z = 23.944+16.288i
Zs(2fo) = 10.59+3.48i
Zl(2fo) = 12.94+27.22i
= 0.3444+0.2742i
Max Gain is 41.4dB
at Z = 8.852+30.085i
= 0.5146+0.6123i
Max PAE is 68.8%
at Z = 13.868+38.414i
= 0.6249+0.4991i
4
68.4
22.6
22.1
66.4
64.4
21.6
21.1
62.4
60.4
20.6
40.2
40
39.8
39.6
Power
Gain
PAE
Zo = 15
3dB Compression Referenced to Peak Gain
Rev. A
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© 2017 Qorvo
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QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Load Pull Smith Charts1, 2
Notes:
1. Vd = 32 V, IDQ = 50 mA, Pulsed signal with 100 us pulse width and 20 % duty cycle.
2. See page 18 for load pull and source pull reference planes.
3 GHz, Load-pull
1
.
8
Zs(1fo) = 15.69-1.57i
Zs(2fo) = 10.44-6.82i
Zl(2fo) = 6.98+13.35i
Max Power is 40dBm
at Z = 13.584+11.98i
= 0.1073+0.3741i
Max Gain is 33.1dB
at Z = 4.745+19.018i
= 0.2118+0.7591i
Max PAE is 66.1%
at Z = 10.059+21.079i
= 0.2989+0.5897i
65.7
63.7
19.9
19.4
61.7
59.7
57.7
55.7
18.9
18.4
53.7
17.9
39.9
39.7
39.5
39.3
39.1
Power
Gain
PAE
Zo = 15
3dB Compression Referenced to Peak Gain
Rev. A
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© 2017 Qorvo
www.qorvo.com
QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Load Pull Smith Charts1, 2
Notes:
1. Vd = 32 V, IDQ = 50 mA, Pulsed signal with 100 us pulse width and 20 % duty cycle.
2. See page 18 for load pull and source pull reference planes.
4 GHz, Load-pull
1
.
6
Zs(1fo) = 10.53+2.31i
Zs(2fo) = 12.9-12i
Zl(2fo) = 3.02+5.28i
Max Power is 40.3dBm
at Z = 9.136+10.385i
= -0.0488+0.4513i
Max Gain is 19.3dB
at Z = 3.005+14.178i
= -0.0285+0.8099i
Max PAE is 69.4%
at Z = 4.579+14.616i
= 0.0161+0.7345i
67.4
65.4
17.4
63.4
61.4
59.4
16.9
57.4
55.4
16.4
40.1
15.9
39.9
15.4
39.7
39.5
39.3
Power
Gain
PAE
Zo = 15
3dB Compression Referenced to Peak Gain
Rev. A
© 2017 Qorvo
Disclaimer: Subject to change without notice
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QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Load Pull Smith Charts1, 2
Notes:
1. Vd = 32 V, IDQ = 50 mA, Pulsed signal with 100 us pulse width and 20 % duty cycle.
2. See page 18 for load pull and source pull reference planes.
6 GHz, Load-pull
Zs(1fo) = 14.49-1.71i
Max Power is 40.4dBm
at Z = 6.435+4.119i
= -0.3497+0.2593i
Max Gain is 14.5dB
at Z = 2.179+7.603i
= -0.4603+0.6463i
Max PAE is 61.2%
at Z = 4.026+5.948i
= -0.4364+0.4491i
14.5
58.6
60.6
56.6
54.6
52.6
39.7
39.9
14
13.5
13
39.5
40.1
40.3
12.5
Power
Gain
PAE
Zo = 15
3dB Compression Referenced to Peak Gain
Rev. A
Disclaimer: Subject to change without notice
- 10 of 23 -
© 2017 Qorvo
www.qorvo.com
QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Load Pull Smith Charts1, 2
Notes:
1. Vd = 32 V, IDQ = 50 mA, Pulsed signal with 100 us pulse width and 20 % duty cycle.
2. See page 18 for load pull and source pull reference planes.
9.0GHz, Load-pull
Zs(fo) = 9.28-23.74i
Zs(2fo) = 42.03-7.81i
Zs(3fo) = 11.83+8.63i
Zl(2fo) = NaN
Max Power is 40dBm
at Z = 5.294-7.136i
= -0.3156-0.4626i
Max Gain is 10.2dB
at Z = 3.652-4.82i
= -0.5077-0.3896i
Max PAE is 50.3%
at Z = 3.829-5.88i
= -0.4518-0.4533i
Zl(3fo) = NaN
9.01
9.51
8.51
8.01
10
40.7
42.7
48.7 46.7
44.7
39.4 39.2
39.6
39.8
40
Power
Gain
PAE
Zo = 15
3dB Compression Referenced to Peak Gain
Rev. A
Disclaimer: Subject to change without notice
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© 2017 Qorvo
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QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Load Pull Smith Charts1, 2
Notes:
1. Vd = 32 V, IDQ = 50 mA, Pulsed signal with 100 us pulse width and 20 % duty cycle.
2. See page 18 for load pull and source pull reference planes.
10.0GHz, Load-pull
Zs(fo) = 7.7-20.19i
Zs(2fo) = 22.32-13.1i
Zs(3fo) = 12.8+11.46i
Zl(2fo) = NaN
Max Power is 39.9dBm
at Z = 5.599-10.67i
= -0.1483-0.5948i
Max Gain is 9.2dB
at Z = 2.956-6.77i
= -0.4628-0.5516i
Max PAE is 46.3%
at Z = 3.227-8.357i
= -0.36-0.6235i
Zl(3fo) = NaN
7.26
7.76
39
39.2
8.26
36.5
38.5
39.4
8.76
40.5
42.5
39.6
39.8
44.5
Power
Gain
PAE
Zo = 15
3dB Compression Referenced to Peak Gain
Rev. A
Disclaimer: Subject to change without notice
- 12 of 23 -
© 2017 Qorvo
www.qorvo.com
QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Typical Performance – Load Pull Drive-up
Notes:
1. Pulsed signal with 100 us pulse width and 20 % duty cycle, Vd = 32 V, IDQ = 50 mA
2. See page 18 for load pull and source pull reference planes where the performance was measured.
Gain and PAE vs. Output Power
2 GHz - Efficiency Tuned
Gain and PAE vs. Output Power
2 GHz - Power Tuned
28
27
26
25
24
23
22
21
20
19
18
100
90
80
70
60
50
40
30
20
10
0
28
27
26
25
24
23
22
21
20
19
18
100
90
80
70
60
50
40
30
20
10
0
Zs(1fo) = 11.09-1.84i
Zs(2fo) = 10.59+3.48i
Zl(1fo) = 13.87+38.41i
Zl(2fo) = 13+27.18i
Gain
PAE
Gain
PAE
Zs(1fo) = 11.09-1.84i
Zs(2fo) = 10.59+3.48i
Zl(1fo) = 23.94+16.29i
Zl(2fo) = 12.96+27.34i
30
31
32
33
34
35
36
37
38
32
33
34
35
36
37
38
39
40
40
40
41
42
Output Power [dBm]
Output Power [dBm]
Gain and PAE vs. Output Power
3 GHz - Power Tuned
Gain and PAE vs. Output Power
3 GHz - Efficiency Tuned
26
25
24
23
22
21
20
19
18
17
16
100
90
80
70
60
50
40
30
20
10
0
26
25
24
23
22
21
20
19
18
17
16
100
90
80
70
60
50
40
30
20
10
0
Gain
PAE
Gain
PAE
Zs(1fo) = 15.69-1.57i
Zs(2fo) = 10.44-6.82i
Zl(1fo) = 10.06+21.08i
Zl(2fo) = 7.13+13.28i
Zs(1fo) = 15.69-1.57i
Zs(2fo) = 10.44-6.82i
Zl(1fo) = 13.58+11.98i
Zl(2fo) = 6.98+13.33i
32
33
34
35
36
37
38
39
41
42
30
31
32
33
34
35
36
37
38
39
40
Output Power [dBm]
Output Power [dBm]
Gain and PAE vs. Output Power
4 GHz - Efficiency Tuned
Gain and PAE vs. Output Power
4 GHz - Power Tuned
24
23
22
21
20
19
18
17
16
15
14
100
90
80
70
60
50
40
30
20
10
0
24
23
22
21
20
19
18
17
16
15
14
100
90
80
70
60
50
40
30
20
10
0
Gain
PAE
Gain
PAE
Zs(1fo) = 10.53+2.31i
Zs(2fo) = 12.9-12i
Zl(1fo) = 4.58+14.62i
Zl(2fo) = 3.02+5.36i
Zs(1fo) = 10.53+2.31i
Zs(2fo) = 12.9-12i
Zl(1fo) = 9.14+10.38i
Zl(2fo) = 3.04+5.3i
30
31
32
33
34
35
36
37
38
39
40
32
33
34
35
36
37
38
39
41
42
Output Power [dBm]
Output Power [dBm]
Rev. A
© 2017 Qorvo
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QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Typical Performance – Load Pull Drive-up
Notes:
1. Pulsed signal with 100 us pulse width and 20 % duty cycle, Vd = 32 V, IDQ = 50 mA
2. See page 18 for load pull and source pull reference planes where the performance was measured.
Gain and PAE vs. Output Power
6 GHz - Power Tuned
Gain and PAE vs. Output Power
6 GHz - Efficiency Tuned
20
19
18
17
16
15
14
13
12
11
10
100
90
80
70
60
50
40
30
20
10
0
20
19
18
17
16
15
14
13
12
11
10
100
90
80
70
60
50
40
30
20
10
0
Gain
PAE
Gain
PAE
Zs(1fo) = 14.49-1.71i
Zl(1fo) = 4.03+5.95i
Zs(1fo) = 14.49-1.71i
Zl(1fo) = 6.44+4.12i
32
33
34
35
36
37
38
39
40
41
42
30
31
32
33
34
35
36
37
38
39
40
Output Power [dBm]
Output Power [dBm]
Gain and PAE vs. Output Power
9.0 GHz - Efficiency Tuned
Zs-fo = 9.28-23.74i
Zs-2fo = 42.03-7.81i
Zs-3fo = 11.83+8.63i
Zl-fo = 3.829-5.88i
Zl-2fo = NaN
Gain and PAE vs. Output Power
9.0 GHz - Power Tuned
16
15
14
13
12
11
10
9
100
90
80
70
60
50
40
30
20
10
0
16
15
14
13
12
11
10
9
100
90
80
70
60
50
40
30
20
10
0
Gain
PAE
Gain
PAE
Zs-fo = 9.28-23.74i
Zs-2fo = 42.03-7.81i
Zs-3fo = 11.83+8.63i
Zl-fo = 5.294-7.136i
Zl-2fo = NaN
Zl-3fo = NaN
Zl-3fo = NaN
8
8
7
7
6
30
31
32
33
34
35
36
37
38
39
40
6
30
31
32
33
34
35
36
37
38
39
40
41
42
Output Power [dBm]
Output Power [dBm]
Gain and PAE vs. Output Power
10.0 GHz - Efficiency Tuned
Gain and PAE vs. Output Power
10.0 GHz - Power Tuned
16
15
14
13
12
11
10
9
100
90
80
70
60
50
40
30
20
10
0
16
15
14
13
12
11
10
9
100
90
80
70
60
50
40
30
20
10
0
Gain
PAE
Gain
PAE
Zs-fo = 7.7-20.19i
Zs-2fo = 22.32-13.1i
Zs-3fo = 12.8+11.46i
Zl-fo = 3.227-8.357i
Zl-2fo = NaN
Zs-fo = 7.7-20.19i
Zs-2fo = 22.32-13.1i
Zs-3fo = 12.8+11.46i
Zl-fo = 5.599-10.67i
Zl-2fo = NaN
Zl-3fo = NaN
Zl-3fo = NaN
8
8
7
7
6
30
31
32
33
34
35
36
37
38
39
40
6
32
33
34
35
36
37
38
39
40
41
42
Output Power [dBm]
Output Power [dBm]
Rev. A
© 2017 Qorvo
Disclaimer: Subject to change without notice
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QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Power Driveup Performance Over Temperatures of 3.1 – 3.5 GHz EVB1
Notes:
1- Vd = 32 V, IDQ = 50 mA, Pulse Width = 100 us, Duty Cycle = 20 %
Rev. A
Disclaimer: Subject to change without notice
- 15 of 23 -
© 2017 Qorvo
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QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Power Driveup Performance at 25 °C of 3.1 – 3.5 GHz EVB1
Notes:
1- Vd = 32 V, IDQ = 50 mA, Pulse Width = 100 us, Duty Cycle = 20 %
Rev. A
Disclaimer: Subject to change without notice
- 16 of 23 -
© 2017 Qorvo
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QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Two-Tone Performance at 25 °C of 3.1 – 3.5 GHz EVB1
Notes:
1- Center Frequency = 3.3 GHz. Tone Seperation = 10 MHz.
Rev. A
Disclaimer: Subject to change without notice
- 17 of 23 -
© 2017 Qorvo
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QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Pin Layout 1
Notes:
1. The QPD1022 will be marked with the “1022” designator and a lot code marked below the part designator. The “YY” represents
the last two digits of the calendar year the part was manufactured, the “WW” is the work week of the assembly lot start, the
“MZZZ” is the batch ID.
Pin Description
Pin
Symbol
VG / RF IN
VD / RF OUT
Description
2, 3
Gate voltage / RF Input
Drain voltage / RF Output
9 – 12
1, 4, 5 – 8,
13 – 16
NC
Not Connected
17
Back Plane
Source to be connected to ground
Rev. A
© 2017 Qorvo
Disclaimer: Subject to change without notice
- 18 of 23 -
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QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Mechanical Drawing
Notes:
1- All dimensions are in mm, otherwise noted. Tolerance is ±0.050 mm.
Bias-up Procedure
Bias-down Procedure
1. Set VG to -4 V.
1. Turn off RF signal.
2. Set ID current limit to 100 mA.
3. Apply 32 V VD.
4. Slowly adjust VG until ID is set to 50 mA.
5. Set ID current limit to 1 A
6. Apply RF.
2. Turn off VD
3. Wait 2 seconds to allow drain capacitor to discharge
4. Turn off VG
Rev. A
Disclaimer: Subject to change without notice
- 19 of 23 -
© 2017 Qorvo
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QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
PCB Layout – 3.1 – 3.5 GHz EVB1
Notes:
1- PCB Material is RO4003, 8 mil thick substrate, 1 oz. copper each side.
Rev. A
© 2017 Qorvo
Disclaimer: Subject to change without notice
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QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Bill Of material – 3.1 – 3.5 GHz EVB
Ref Des
Value
Description
Manufacturer
TDK
Part Number
C1608C0G2E101JT080AA
06031C102KAT2A
600S1R0AT250X
600S9R1BT250X
600S100FT250X
600S0R3AT250X
600S0R6AT250X
600S0R8AT250X
600S2R2AT250X
600S5R6BT250X
EEEFK1K330P
TPSC106KR0500
PSF-S00-000
–
C10, C13
100 pF
C0G 100V 5% 0603 Capacitor
C11, C14
C6 – C8
C9, C12
C16
1 nF
1.0 pF
9.1 pF
10 pF
X7R 100V 10% 0603 Capacitor
RF NPO 250VDC ± 0.05 pF Capacitor
RF NPO 250VDC ± 0.1 pF Capacitor
RF NPO 250VDC 1% Capacitor
RF NPO 250VDC ± 0.05 pF Capacitor
RF NPO 250VDC ± 0.05 pF Capacitor
RF NPO 250VDC ± 0.05 pF Capacitor
RF NPO 250VDC ± 0.05 pF Capacitor
RF NPO 250VDC ± 0.1 pF Capacitor
80V 20% SVP Capacitor
AVX
ATC
ATC
ATC
C17
0.2 pF
0.6 pF
0.8 pF
2.2 pF
5.6pF
ATC
C15
ATC
C19 – C20
C4 – C5
C3
ATC
ATC
ATC
C1
33 uF
Panasonic
AVX
C2
10 uF
16V 10% Tantalum Capacitor
J1 – J2
R5
–
SMA Panel Mount 4-hole Jack
0603 5% Thick Film Resistor
Gigalane
ANY
0 Ohm
5.1 Ohm
10 Ohm
22 Ohm
5.6 Ohm
33 Ohm
R6 – R7
R8
0603 1% Thick Film Resistor
ANY
–
0603 1% Thick Film Resistor
ANY
–
R1
0603 5% Thick Film Resistor
ANY
–
R3
0603 5% Thick Film Resistor
ANY
–
R2, R4
0603 1% Thick Film Resistor
ANY
–
Rev. A
© 2017 Qorvo
Disclaimer: Subject to change without notice
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QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Recommended Solder Temperature Profile
Rev. A
Disclaimer: Subject to change without notice
- 22 of 23 -
© 2017 Qorvo
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QPD1022
10W, 32V, DC – 12 GHz, GaN RF Transistor
Product Compliance Information
ESD Sensitivity Ratings
Solderability
Compatible with lead free soldering processes, 260ꢀ°C
maximum reflow temperature.
Caution! ESD Sensitive Device
Package lead plating: NiAu
The use of no-clean solder to avoid washing after soldering is
recommended.
ESD Rating
ESD Rating:
Value:
TBD
TBD
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain
Hazardous Substances in Electrical and Electronic
Equipment).
Test:
Standard:
Human Body Model (HBM)
JEDEC Standard JESD22-A114
MSL Rating
MSL Rating:
Test:
TBD
This product also has the following attributes:
260ꢁ°C convection reflow
JEDEC Standard IPC/JEDEC J-STD-020
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Standard:
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and information about
Qorvo:
Web: www.Qorvo.com
Email: info-sales@qorvo.com
Tel:
Fax:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: info-products@qorvo.com
Important Notice
The information contained herein is believed to be reliable. Qorvo makes no warranties regarding the information contained
herein. Qorvo assumes no responsibility or liability whatsoever for any of the information contained herein. Qorvo assumes
no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is
provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user.
All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant
information before placing orders for Qorvo products. The information contained herein or any use of such information does
not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether
with regard to such information itself or anything described by such information.
Qorvo products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining
applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.
Rev. A
Disclaimer: Subject to change without notice
- 23 of 23 -
© 2017 Qorvo
www.qorvo.com
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