TGA2625_15 [TRIQUINT]
10 to 11GHz 20W GaN Power Amplifier;
| 型号： | TGA2625_15 |
| 厂家： | 
TRIQUINT SEMICONDUCTOR |
| 描述： | 10 to 11GHz 20W GaN Power Amplifier |
| 文件： | 总14页 (文件大小：615K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TGA2625
10 – 11GHz 20W GaN Power Amplifier
Applications
Radar
Communications
Product Features
Functional Block Diagram
Frequency Range: 10 – 11GHz
PSAT: 43dBm @ PIN = 15dBm
P1dB: >40dBm
2
3
4
5
PAE: >42% @ PIN = 15dBm
Large Signal Gain: 28dB
Small Signal Gain: 37dB
1
6
Return Loss: >11dB
Bias: VD = 28V, IDQ = 365mA, VG = -2.5V Typical
Pulsed VD: PW = 100us and DC = 10%
Chip Dimensions: 5.0 x 2.62 x 0.10 mm
9
10
8
7
General Description
Pad Configuration
TriQuint’s TGA2625 is an x-band, high power MMIC
amplifier fabricated on TriQuint’s production 0.25um GaN
on SiC process. The TGA2625 operates from 10–
11GHz and provides a superior combination of power,
gain and efficiency. Achieving 20W of saturated output
power with 28dB of large signal gain and greater than
42% power-added efficiency, the TGA2625 provides the
level of performance demanded by today’s system
architectures. Depending on the system requirements,
the TGA2625 can support cost saving initiatives on
existing systems while supporting next generation
systems with increased performance.
Pad No.
1
Symbol
RF In
VG1-2
2, 10
4, 8
3, 9
5, 7
6
VG3
VD1-2
VD3
RF Out
Lead-free and RoHS compliant.
Evaluation boards are available upon request.
Ordering Information
Part
ECCN
Description
10 – 11GHz 20W GaN
Power Amplifier
TGA2625
3A001.b.2.b
Preliminary Datasheet: Rev - 11-03-14
Disclaimer: Subject to change without notice
- 1 of 14 -
© 2014 TriQuint
www.triquint.com
TGA2625
10 – 11GHz 20W GaN Power Amplifier
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Drain Voltage (VD)
Value
40V
Parameter
Drain Voltage (VD)
Value
28V
Gate Voltage Range (VG)
-5 to 0V
1.65A
Drain Current (IDQ
)
365mA (Total)
-2.5V (Typ.)
Drain Current (ID1-2
)
Gate Voltage (VG)
Drain Current (ID3)
Gate Current (IG1-2
2.15A
-2 to 10mA
Electrical specifications are measured at specified test conditions.
Specifications are not guaranteed over all recommended
operating conditions.
)
Gate Current (IG3)
-6 to 14mA
49W
Power Dissipation (PDISS), 85°C
Input Power (PIN), CW, 50Ω,
VD = 28V, 85°C
25dBm
19dBm
Input Power (PIN), CW, VSWR 6:1,
VD = 28V, 85°C
Channel Temperature (TCH)
Mounting Temperature (30 seconds)
Storage Temperature
275°C
320°C
-55 to 150°C
Operation of this device outside the parameter ranges
given above may cause permanent damage. These are
stress ratings only, and functional operation of the device at
these conditions is not implied.
Electrical Specifications
Test conditions unless otherwise noted: 250C, VD = 28V, IDQ = 365mA, VG = -2.5V Typical, Pulsed VD: PW = 100us, DC = 10%
Parameter
Operational Frequency Range
Min
10
Typical
Max
11
Units
GHz
dB
Small Signal Gain
37
>12
>11
43
Input Return Loss
dB
Output Return Loss
dB
Output Power (Pin = 15dBm)
Power Added Efficiency (Pin = 15dBm)
Power @ 1dB Compression (P1dB)
Small Signal Gain Temperature Coefficient
Recommended Operating Voltage:
dBm
%
>42
>40
-0.05
28
dBm
dB/°C
V
20
32
Preliminary Datasheet: Rev - 11-03-14
Disclaimer: Subject to change without notice
- 2 of 14 -
© 2014 TriQuint
www.triquint.com
TGA2625
10 – 11GHz 20W GaN Power Amplifier
Thermal and Reliability Information
Parameter
Test Conditions
Value Units
Thermal Resistance (θJC) (1)
Tbase = 85°C, Pulsed VD : PW = 100us, DC = 10%
2.67
160
ºC/W
°C
Tbase = 85°C, VD = 28V, ID_Drive = 1.7A,
PIN = 17dBm, POUT = 43dBm, PDISS = 28W,
Pulsed VD
Channel Temperature (TCH) (Under RF drive)
Median Lifetime (TM)
5.98 x 10^9 Hrs
Thermal Resistance (θJC) (1)
Tbase = 85°C, CW
3.92
195
ºC/W
°C
Tbase = 85°C, VD = 28V, ID_Drive = 1.55A,
PIN = 17dBm, POUT = 42dBm, PDISS = 28W,
CW
Channel Temperature (TCH) (Under RF drive)
Median Lifetime (TM)
1.98 x10^7
Hrs
Notes:
1. Thermal resistance measured to back of carrier plate. MMIC mounted on 40 mils CuM (85/15) carrier using 1.5 mil AuSn.
Median Lifetime
Test Conditions: VD = 40 V; Failure Criteria = 10% reduction in ID_MAX
Median Lifetime vs. Channel Temperature
1E+18
1E+17
1E+16
1E+15
1E+14
1E+13
1E+12
1E+11
1E+10
1E+09
1E+08
1E+07
1E+06
1E+05
FET13
1E+04
25
50
75
100 125 150 175 200 225 250 275
Channel Temperature, TCH (C)
Preliminary Datasheet: Rev - 11-03-14
Disclaimer: Subject to change without notice
- 3 of 14 -
© 2014 TriQuint
www.triquint.com
TGA2625
10 – 11GHz 20W GaN Power Amplifier
Typical Performance (Small Signal)
Gain vs. Frequency vs. Temperature
Gain vs. Frequency vs. VD
45
45
Temp. = +25ꢀC
40
35
40
35
30
30
-40C
20V
25
25
+25C
25V
+85C
28V
20
20
30V
VD = 28V, IDQ = 365mA
10.5 11 11.5
IDQ = 365mA
32V
15
15
9
9.5
10
12
9
9.5
10
10.5
11
11.5
12
Frequency (GHz)
Frequency (GHz)
Gain vs. Frequency vs. ID
Temp. = +25ꢀC
45
40
35
30
25
20
15
145mA
365mA
725mA
VD = 28V
10.5
9
9.5
10
11
11.5
12
Frequency (GHz)
Input Return Loss vs. Freq. vs. Temp.
Output Return Loss vs. Freq. vs. Temp.
0
-5
0
-5
VD = 28V, IDQ = 365mA
VD = 28V, IDQ = 365mA
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
-40C
+25C
+85C
-40C
+25C
+85C
9
9.5
10
10.5
11
11.5
12
9
9.5
10
10.5
11
11.5
12
Frequency (GHz)
Frequency (GHz)
Preliminary Datasheet: Rev - 11-03-14
Disclaimer: Subject to change without notice
- 4 of 14 -
© 2014 TriQuint
www.triquint.com
TGA2625
10 – 11GHz 20W GaN Power Amplifier
Typical Performance (Pulsed Opeartion)
Output Power vs. Frequency vs. VD
PAE vs. Frequency vs. VD
50
45
Temp. = +25ꢀC
PIN = 15dBm
PIN = 15dBm
Temp. = +25ꢀC
45
40
35
30
25
20
43
41
39
37
35
33
Vd=25V
Vd=28V
Vd=30V
Vd=32V
Vd=25V
Vd=28V
Vd=30V
Vd=32V
IDQ = 365mA
Pulsed: PW=100us, DC=10%
IDQ = 365mA
Pulsed: PW=100us, DC=10%
9
9.5
10
10.5
11
11.5
12
9
9.5
10
10.5
11
11.5
12
Frequency (GHz)
Frequency (GHz)
Output Power vs. Frequency vs. ID
PAE vs. Frequency vs. ID
45
43
41
39
37
35
33
50
45
40
35
30
25
20
VD = 28V
PIN = 15dBm
PIN = 15dBm
Temp. = +25ꢀC
Temp. = +25ꢀC
145mA
365mA
725mA
145mA
365mA
725mA
VD = 28V
Pulsed: PW=100us, DC=10%
Pulsed: PW=100us, DC=10%
9
9.5
10
10.5
11
11.5
12
9
9.5
10
10.5
11
11.5
12
Frequency (GHz)
Frequency (GHz)
Output Power vs. Frequency vs. Temp.
PAE vs. Frequency vs. Temperature
45
43
41
39
37
35
33
50
45
40
35
30
25
20
VD = 28V, IDQ = 365mA
Pulsed: PW=100us, DC=10%
VD = 28V, IDQ = 365mA
Pulsed: PW=100us, DC=10%
-40C
+25C
+85C
-40C
+25C
+85C
PIN = 15dBm
PIN = 15dBm
9
9.5
10
10.5
11
11.5
12
9
9.5
10
10.5
11
11.5
12
Frequency (GHz)
Frequency (GHz)
Preliminary Datasheet: Rev - 11-03-14
Disclaimer: Subject to change without notice
- 5 of 14 -
© 2014 TriQuint
www.triquint.com
TGA2625
10 – 11GHz 20W GaN Power Amplifier
Typical Performance (Pulsed Operation)
PAE vs. Input Power vs. Freq.
Output Power vs. Input Power vs. Freq.
50
45
Temp. = +25ꢀC
Temp. = +25ꢀC
45
43
40
41
10.0GHz
35
10.5GHz
39
10.0GHz
30
11.0GHz
10.5GHz
11.0GHz
37
35
33
25
VD = 28V, IDQ = 365mA
20
Pulsed: PW=100us, DC=10%
VD = 28V, IDQ = 365mA
Pulsed: PW=100us, DC=10%
15
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Input Power (dBm)
Input Power (dBm)
Output Power vs. Frequency
Power Gain vs. Input Power vs. Freq.
45
40
37
34
31
28
25
22
VD = 28V, IDQ = 365mA
Pulsed: PW=100us, DC=10%
Temp. = +25ꢀC
43
41
39
37
35
33
10.0GHz
10.5GHz
11.0GHz
Psat @ Pin=15dBm
P1dB
Temp. = +25ꢀC
VD = 28V, IDQ = 365mA
10 10.2 10.4
Pulsed: PW=100us, DC=10%
10.6
10.8
11
0
2
4
6
8
10 12 14 16 18 20
Input Power (dBm)
Frequency (GHz)
Drain Current vs. Frequency vs. Temp.
Drain Current vs. Input Power vs. Freq.
2000
2000
1750
1500
1250
1000
750
PIN = 15dBm
Temp. = +25ꢀC
1750
1500
1250
1000
750
-40C
+25C
+85C
10.0GHz
10.5GHz
11.0GHz
VD = 28V, IDQ = 365mA
500
500
Pulsed: PW=100us, DC=10%
VD = 28V, IDQ = 365mA
Pulsed: PW=100us, DC=10%
250
250
9
9.5
10
10.5
11
11.5
12
0
2
4
6
8
10 12 14 16 18 20
Input Power (dBm)
Frequency (GHz)
Preliminary Datasheet: Rev - 11-03-14
Disclaimer: Subject to change without notice
- 6 of 14 -
© 2014 TriQuint
www.triquint.com
TGA2625
10 – 11GHz 20W GaN Power Amplifier
Typical Performance (CW Operation)
Output Power vs. Frequency vs. VD
PAE vs. Frequency vs. VD
45
50
CW
PIN = 15dBm
Temp. = +25ꢀC
PIN = 15dBm
CW
Temp. = +25ꢀC
43
41
39
37
35
33
45
40
35
30
25
20
Vd=25V
Vd=28V
Vd=30V
Vd=32V
Vd=25V
Vd=28V
Vd=30V
Vd=32V
IDQ = 365mA
10.5 11
IDQ = 365mA
10.5
9
9.5
10
11
11.5
12
9
9.5
10
11.5
12
Frequency (GHz)
Frequency (GHz)
Output Power vs. Frequency vs. ID
PAE vs. Frequency vs. ID
45
43
41
39
37
35
33
50
45
40
35
30
25
20
PIN = 15dBm
VD = 28V
PIN = 15dBm
Temp. = +25ꢀC
VD = 28V
Temp. = +25ꢀC
145mA
145mA
365mA
725mA
365mA
725mA
CW
CW
9
9.5
10
10.5
11
11.5
12
9
9.5
10
10.5
11
11.5
12
Frequency (GHz)
Frequency (GHz)
Output Power vs. Frequency vs. Temp.
PAE vs. Frequency vs. Temperature
45
43
41
39
37
35
33
50
45
40
35
30
25
20
PIN = 15dBm
CW
CW
VD = 28V, IDQ = 365mA
PIN = 15dBm
-40C
+25C
+85C
-40C
+25C
+85C
VD = 28V, IDQ = 365mA
9
9.5
10
10.5
11
11.5
12
9
9.5
10
10.5
11
11.5
12
Frequency (GHz)
Frequency (GHz)
Preliminary Datasheet: Rev - 11-03-14
Disclaimer: Subject to change without notice
- 7 of 14 -
© 2014 TriQuint
www.triquint.com
TGA2625
10 – 11GHz 20W GaN Power Amplifier
Typical Performance (CW Operation)
PAE vs. Input Power vs. Freq.
Output Power vs. Input Power vs. Freq.
50
45
Temp. = +25ꢀC
VD = 28V, IDQ = 365mA
CW
CW
Temp. = +25ꢀC
45
40
35
30
25
20
15
43
41
39
37
35
33
10.0GHz
10.5GHz
11.0GHz
10.0GHz
10.5GHz
11.0GHz
VD = 28V, IDQ = 365mA
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
Input Power (dBm)
Input Power (dBm)
Output Power vs. Frequency
Power Gain vs. Input Power vs. Freq.
45
43
41
39
37
35
33
40
37
34
31
28
25
22
CW
Temp. = +25ꢀC
Temp. = +25ꢀC
CW
10.0GHz
10.5GHz
11.0GHz
Psat @ Pin=15dBm
P1dB
VD = 28V, IDQ = 365mA
VD = 28V, IDQ = 365mA
9
9.5
10
10.5
11
11.5
12
0
2
4
6
8
10 12 14 16 18 20
Input Power (dBm)
Frequency (GHz)
Drain Current vs. Frequency vs. Temp.
Drain Current vs. Input Power vs. Freq.
2000
1750
1500
1250
1000
750
2000
1750
1500
1250
1000
750
CW
Temp. = +25ꢀC
CW
PIN = 15dBm
-40C
+25C
+85C
10.0GHz
10.5GHz
11.0GHz
500
500
VD = 28V, IDQ = 365mA
VD = 28V, IDQ = 365mA
250
250
9
9.5
10
10.5
11
11.5
12
0
2
4
6
8
10 12 14 16 18 20
Input Power (dBm)
Frequency (GHz)
Preliminary Datasheet: Rev - 11-03-14
Disclaimer: Subject to change without notice
- 8 of 14 -
© 2014 TriQuint
www.triquint.com
TGA2625
10 – 11GHz 20W GaN Power Amplifier
Typical Performance (Linearity)
IM3 vs. Output Power vs. Frequency
IM5 vs. Output Power vs. Frequency
0
-20
VD = 28V, IDQ = 365mA, 10MHz Tone Spacing
VD = 28V, IDQ = 365mA, 10MHz Tone Spacing
-10
-20
-30
-30
-40
-50
-40
-50
-60
-60
10.0GHz
10.5GHz
11.0GHz
10.0GHz
10.5GHz
-70
11.0GHz
Temp. = +25ꢀC
Temp. = +25ꢀC
-80
20
25
30
35
40
20
25
30
35
40
Output Power per Tone (dBm)
Output Power per Tone (dBm)
IM3 vs. Output Power vs. Temperature
IM5 vs. Output Power vs. Temperature
0
-10
-20
-30
-40
-50
-60
-70
-10
-20
-30
-40
-50
-60
-70
-80
VD = 28V, IDQ = 365mA, 10.5GHz, 10MHz Tone Spacing
VD = 28V, IDQ = 365mA, 10.5GHz, 10MHz Tone Spacing
-40ꢀC
+25ꢀC
+85ꢀC
-40ꢀC
+25ꢀC
+85ꢀC
15
20
25
30
35
40
15
20
25
30
35
40
Output Power per Tone (dBm)
Output Power per Tone (dBm)
3RD Harmonic vs. Input Power vs. Freq.
2ND Harmonic vs. Input Power vs. Freq.
-10
-20
-30
-40
-50
-60
-70
-30
-40
-50
-60
-70
-80
-90
Temp. = +25ꢀC
VD = 28V, IDQ = 365mA
Temp. = +25ꢀC
VD = 28V, IDQ = 365mA
10.0GHz
10.0GHz
10.5GHz
11.0GHz
10.5GHz
11.0GHz
0
2
4
6
8
10 12 14 16 18 20 22
0
2
4
6
8
10 12 14 16 18 20 22
Input Power (dBm)
Input Power (dBm)
Preliminary Datasheet: Rev - 11-03-14
Disclaimer: Subject to change without notice
- 9 of 14 -
© 2014 TriQuint
www.triquint.com
TGA2625
10 – 11GHz 20W GaN Power Amplifier
Application Circuit
C9
C10
0.1 uF
47 uF
C13 (1)
100 uF
R1
10 Ohms
C1
1000uF
C3
1000uF
C4
C2
2
5
1000pF
4
3
1000pF
VD = 28 V,
IDQ = 365 mA
VG = -2.5 V
Typical
1
6
J1
RF In
J2
RF Out
C5
C7
9
10
8
7
1000pF
1000pF
C8
1000uF
C6
1000uF
R2
10 Ohms
C14 (1)
100 uF
C11
C12
0.1 uF
47 uF
Notes:
1. Remove caps for pulse operation. These caps are part of the cable harness for CW operation.
Bias-down Procedure
1. Turn off RF signal
Bias-up Procedure
1. Set ID limit to 1.9A, IG limit to 12mA
2. Reduce VG to -5.0V. Ensure IDQ ~ 0mA
3. Set VD to 0V
2. Set VG to -5.0V
3. Set VD +28V
4. Adjust VG more positive until IDQ = 365mA (VG ~ -2.5V
Typical)
4. Turn off VD supply
5. Turn off VG supply
5. Apply RF signal
Preliminary Datasheet: Rev - 11-03-14
Disclaimer: Subject to change without notice
- 10 of 14 -
© 2014 TriQuint
www.triquint.com
TGA2625
10 – 11GHz 20W GaN Power Amplifier
Evaluation Board (EVB) Layout Assembly
Notes:
1. 100uF/100V charge storage cap is needed on the drain. For pulsed operation this cap must be on the supply-side of
the pulse-modulator.
Bill of Materials
Reference Design
C1 – C8
Value
1000pF
0.1uF
47uF
10Ω
Description
SLC, 50V
Manufacturer
Various
Part Number
C9, C11
Cap, 0402, 50V, 10%, X7R
Cap, 1206, 50V, 10%, X7R
Res, 0402
Various
C10, C12
R1 – R2
Various
Various
R3 – R4
0Ω
Res, 0402
Various
Preliminary Datasheet: Rev - 11-03-14
Disclaimer: Subject to change without notice
- 11 of 14 -
© 2014 TriQuint
www.triquint.com
TGA2625
10 – 11GHz 20W GaN Power Amplifier
Mechanical Drawing & Bond Pad Description
4
3
9
2
5
6
7
1
10
8
Unit: millimeters
Thickness: 0.10
Die x, y size tolerance: +/- 0.050
Chip edge to bond pad dimensions are shown to center of pad
Ground is backside of die
Bond Pad Symbol
Pad Size
Description
1
RF In
VG1-2
VG3
0.150 x 0.300 RF Input; matched to 50Ω; DC Blocked
Gate voltage 1, bias network is required; see Application Circuit on page
10 as an example.
2, 8
4,10
0.080 x 0.080
Gate voltage 3, bias network is required; see Application Circuit on page
10 as an example.
Drain voltage 1, bias network is required; see Application Circuit on page
10 as an example.
0.080 x 0.080
0.150 x 0.100
0.250 x 0.150
3, 9
5, 7
6
VD1-2
VD3
Drain voltage 3, bias network is required; see Application Circuit on page
10 as an example.
RF Out
0.180 x 0.350 RF Output; matched to 50Ω; DC Blocked
Preliminary Datasheet: Rev - 11-03-14
Disclaimer: Subject to change without notice
- 12 of 14 -
© 2014 TriQuint
www.triquint.com
TGA2625
10 – 11GHz 20W GaN Power Amplifier
Assembly Notes
Component placement and adhesive attachment assembly notes:
•
•
•
•
•
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment (i.e. epoxy) can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Reflow process assembly notes:
•
•
•
•
•
Use AuSn (80/20) solder and limit exposure to temperatures above 300C to 3-4 minutes, maximum.
An alloy station or conveyor furnace with reducing atmosphere should be used.
Do not use any kind of flux.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Interconnect process assembly notes:
•
•
•
•
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonic are critical parameters.
Aluminum wire should not be used.
Devices with small pad sizes should be bonded with 0.0007-inch wire.
Preliminary Datasheet: Rev - 11-03-14
Disclaimer: Subject to change without notice
- 13 of 14 -
© 2014 TriQuint
www.triquint.com
TGA2625
10 – 11GHz 20W GaN Power Amplifier
Product Compliance Information
ESD Sensitivity Ratings
Solderability
This part is compliant with EU 2002/95/EC RoHS
directive (Restrictions on the Use of Certain Hazardous
Substances in Electrical and Electronic Equipment).
Caution! ESD-Sensitive Device
This product also has the following attributes:
ESD Rating: TBD
Lead Free
Halogen Free (Chlorine, Bromine)
Antimony Free
TBBP-A (C15H12Br402) Free
PFOS Free
SVHC Free
Value:
Test:
TBD
Human Body Model (HBM)
Standard: JEDEC Standard JESD22-A114
ECCN
US Department of State: 3A001.b.2.b
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations, and
information about TriQuint:
Web: www.triquint.com
Email: info-sales@triquint.com
Tel:
Fax:
+1.972.994.8465
+1.972.994.8504
For technical questions and application information:
Email: info-products@triquint.com
Important Notice
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with
such information is entirely with the user. All information contained herein is subject to change without notice.
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or
anything described by such information.
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-
sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal
injury or death.
Preliminary Datasheet: Rev - 11-03-14
Disclaimer: Subject to change without notice
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