TGB2001-EPU [TRIQUINT]
Lange Coupler Set; 兰格耦合器套装型号: | TGB2001-EPU |
厂家: | TRIQUINT SEMICONDUCTOR |
描述: | Lange Coupler Set |
文件: | 总7页 (文件大小:284K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Advance Product Information
April 7, 2003
TGB2001-EPU
TGB4001-EPU
TGB4002-EPU
Lange Coupler Set
Key Features and Performance
•
•
•
•
Very Low Loss (<0.25dB Typical)
High Power 1W 50ꢀ Termination
Broadband 3dB Power Split
Chip dimensions: 1.0 x 3.0 x 0.1 mm
(40 x 120 x 4 mils)
•
3 sizes Cover 12GHz - 45GHz
Primary Applications
TGB4001
18-32GHz
TGB4002
27-45GHz
TGB2001
12-21GHz
•
Power Combining
Preliminary Measured Data
TGB2001
TGB2001 Back-to-Back
-2
-3
-4
-5
0.00
-0.25
-0.50
-0.75
-1.00
-1.25
-1.50
Direct
Coupled
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
Frequency (GHz)
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
1
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
April 7, 2003
TGB2001-EPU
TGB4001-EPU
TGB4002-EPU
TABLE I
MAXIMUM RATINGS
Symbol
PIN
Parameter 1/
Input Continuous Wave Power
Mounting Temperature
Value
TBD dBm
320 0C
Notes
TM
(30 Seconds)
TSTG
Storage Temperature
-65 to 150 0C
1/ These ratings represent the maximum operable values for this device.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
2
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
April 7, 2003
TGB2001-EPU
Typical Fixtured Performance
TGB2001
TGB4001-EPU
TGB4002-EPU
-2
-2.5
-3
Direct
Coupled
-3.5
-4
-4.5
-5
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
Frequency (GHz)
TGB2001 Back-to-Back
0.00
-0.25
-0.50
-0.75
-1.00
-1.25
-1.50
12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
3
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
April 7, 2003
TGB2001-EPU
Mechanical Drawing
TGB2001-EPU
TGB4001-EPU
TGB4002-EPU
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
4
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
April 7, 2003
TGB2001-EPU
Mechanical Drawing
TGB4001-EPU
TGB4001-EPU
TGB4002-EPU
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
5
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
April 7, 2003
TGB2001-EPU
Mechanical Drawing
TGB4002-EPU
TGB4001-EPU
TGB4002-EPU
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
6
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
Advance Product Information
April 7, 2003
TGB2001-EPU
TGB4001-EPU
TGB4002-EPU
Assembly Process Notes
Reflow process assembly notes:
S
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300LC.
(30 seconds maximum)
S
S
S
S
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
S
S
S
S
S
S
S
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
S
S
S
S
S
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200LC.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
7
TriQuint Semiconductor Texas Phone : (972)994-8465 Fax: (972)994-8504 Web: www.triquint.com
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