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TGF2018_15 [TRIQUINT]

180 um Discrete GaAs pHEMT;
TGF2018_15
型号： TGF2018_15
厂家： TRIQUINT SEMICONDUCTOR    TRIQUINT SEMICONDUCTOR
描述：

180 um Discrete GaAs pHEMT
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TGF2018  
180 um Discrete GaAs pHEMT  
Applications  
Defense & Aerospace  
High-Reliability  
Test and Measurement  
Commercial  
Broadband Wireless  
Product Features  
Functional Block Diagram  
Frequency Range: DC - 20 GHz  
22 dBm Typical Output Power - P1dB  
14 dB Typical Gain at 12 GHz  
55% Typical PAE at 12 GHz  
1 dB Typical NF at 12 GHz  
No Vias  
Technology: 0.25 um GaAs pHEMT  
Chip Dimensions: 0.41 x 0.34 x 0.10 mm  
General Description  
Pad Configuration  
The TriQuint TGF2018 is a discrete 180 micron pHEMT  
which operates from DC to 20 GHz. The TGF2018 is  
fabricated using TriQuint’s proven standard 0.25 um  
power pHEMT production process. This process  
features advanced techniques to optimize microwave  
power and efficiency at high drain bias operating  
conditions.  
Pad Dimensions Terminals  
G (71um X 71um)  
D (71um X 71um)  
S (121um X 71um)  
Gate  
Drain  
Source  
The TGF2018 typically provides 22 dBm of output power  
at P1dB with gain of 14 dB and 55% power-added  
efficiency at 1 dB compression. This performance  
makes the TGF2018 appropriate for high efficiency  
applications. The protective overcoat layer with silicon  
nitride provides a level of environmental robustness and  
scratch protection.  
The TGF2018 is lead-free and RoHS compliant.  
Ordering Information  
Part  
TGF2018  
ECCN  
EAR99  
Description  
180 um GaAs pHEMT  
Datasheet: Rev. D 11-04-13  
Disclaimer: Subject to change without notice  
- 1 of 8 -  
© 2013 TriQuint  
www.triquint.com  
TGF2018  
180 um Discrete GaAs pHEMT  
Absolute Maximum Ratings  
Symbol  
VDS  
Parameter  
Absolute  
Continuous  
Units  
V
Drain-Source Voltage(2)  
Gate- Source Voltage  
Drain Current(2)  
12  
8
VGS  
-7  
-3  
V
IDS  
IDSS  
IDSS  
1.5  
150 (5)  
mA  
mA  
°C  
IG,F  
Forward Gate Current  
Channel Temperature(3)  
Storage Temperature  
Input Continuous Wave Power(2)  
Total Power Dissipation  
9
TCH  
175 (4)  
-65 to 150  
16  
TSTG  
PIN  
-65 to 150  
at 3 dB Compression  
0.64  
°C  
dBm  
W
PTOT  
Notes:  
0.96  
1. These ratings represent the maximum operable values for this device. Stresses beyond those listed under “Absolute  
Maximum Ratings” may cause permanent damage to the device and/or affect device lifetime. These are stress ratings only,  
and functional operation of the device at these conditions is not implied.  
2. Combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum total power  
dissipation listed in the table.  
3. Junction operating temperature will directly affect the device median time to failure. For maximum life, it is recommended that  
junction temperatures be maintained at the lowest possible levels.  
4. When operated at this channel temperature, the median life is 1.0E+5 hours.  
5. When operated at this channel temperature, the median life is 1.0E+6 hours.  
Electrical Characteristics  
Test conditions unless otherwise noted: Temperatureꢀ=ꢀ25°C.  
Symbol Parameter  
Conditions  
Min Typ Max Units  
P1dB  
G1dB  
PAE  
NF  
Output Power at 1dB Compression  
22  
dBm  
dB  
%
Freqꢀ=ꢀ12ꢀGHz  
DSꢀ=ꢀ8ꢀV  
DSꢀ=ꢀ50%ꢀIDSS  
V
I
Gain at P1dB  
14  
PAE at P1dB  
55  
50 ohm Noise Figure  
Saturated Drain Current  
Transconductance  
V
V
V
V
DSꢀ=ꢀ2ꢀV, IDSꢀ=ꢀ19 mA  
1
dB  
mA  
mS  
V
IDSS  
DSꢀ=ꢀ2ꢀV, VGSꢀ=ꢀ0ꢀV  
36  
58(1)  
70  
80  
Gm  
DSꢀ=ꢀ2ꢀV, IDSꢀ=ꢀ50%ꢀIDSS  
DSꢀ=ꢀ2ꢀV, IDSꢀ=ꢀ0.18ꢀmA  
VP  
Pinch-Off Voltage  
-1.5  
-1.0  
-15  
-15  
88  
-0.5  
-12  
BVGD  
BVGS  
RTH  
Gate-Drain Breakdown Voltage  
Gate-Source Breakdown Voltage  
Thermal Resistance(2)  
IGꢀ=ꢀ0.18ꢀmA, source open  
IGꢀ=ꢀ0.18ꢀmA, drain open  
AuSn eutectic attach  
V
V
°C/W  
Notes:  
1. Typical Standard Deviation of 2ꢀmA (1ꢀσ).  
2. Based on IR Scan  
Datasheet: Rev. D 11-04-13  
Disclaimer: Subject to change without notice  
- 2 of 8 -  
© 2013 TriQuint  
www.triquint.com  
TGF2018  
180 um Discrete GaAs pHEMT  
S-Parameters  
Test Conditions: VDS=+8 V (typ.), IDS=50% IDSS, Temp=+25°C, 50Ω system  
Freq (GHz) S11 (mag) S11 (ang) S21 (mag) S21 (ang) S12 (mag) S12 (ang) S22 (mag) S22 (ang)  
1
0.99  
0.97  
0.95  
0.92  
0.89  
0.86  
0.84  
0.82  
0.81  
0.80  
0.79  
0.79  
0.80  
0.80  
0.81  
0.82  
0.83  
0.83  
0.83  
0.84  
0.86  
0.87  
0.87  
0.88  
0.88  
0.89  
-18.1  
-36.0  
5.99  
5.84  
5.62  
5.36  
5.06  
4.73  
4.41  
4.09  
3.78  
3.48  
3.20  
2.96  
2.74  
2.55  
2.37  
2.22  
2.07  
1.93  
1.79  
1.70  
1.60  
1.51  
1.42  
1.34  
1.27  
1.20  
166.0  
153.9  
141.9  
130.0  
118.7  
108.0  
97.9  
88.4  
79.3  
70.7  
62.6  
55.1  
47.8  
40.8  
34.4  
28.4  
22.2  
16.2  
10.7  
5.3  
0.015  
0.029  
0.042  
0.053  
0.062  
0.069  
0.075  
0.079  
0.081  
0.082  
0.082  
0.082  
0.082  
0.080  
0.079  
0.077  
0.076  
0.074  
0.071  
0.069  
0.068  
0.066  
0.064  
0.062  
0.060  
0.059  
77.5  
68.2  
58.6  
49.1  
40.2  
31.8  
24.2  
17.1  
10.4  
4.0  
0.81  
0.80  
0.77  
0.74  
0.71  
0.67  
0.64  
0.61  
0.58  
0.55  
0.53  
0.51  
0.50  
0.49  
0.48  
0.47  
0.47  
0.46  
0.45  
0.46  
0.45  
0.46  
0.46  
0.46  
0.47  
0.47  
-6.7  
-13.3  
-19.2  
-24.9  
-30.5  
-35.6  
-40.1  
-43.7  
-47.4  
-50.8  
-54.5  
-58.0  
-61.9  
-65.9  
-69.4  
-72.0  
-76.3  
-81.2  
-85.9  
-91.0  
-95.7  
-100.8  
-105.7  
-111.5  
-116.2  
-121.6  
2
3
-53.8  
4
-71.3  
5
-88.0  
6
-103.9  
-119.1  
-133.8  
-147.6  
-160.3  
-171.7  
178.0  
168.4  
159.9  
152.1  
144.8  
138.1  
132.0  
126.4  
121.9  
116.9  
112.5  
108.4  
104.5  
100.9  
97.5  
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
-1.5  
-6.7  
-11.5  
-16.2  
-19.8  
-23.0  
-26.3  
-29.8  
-32.7  
-34.4  
-36.7  
-39.0  
-41.3  
-42.6  
-43.7  
-45.0  
-0.1  
-5.5  
-10.7  
-15.7  
-20.7  
-25.7  
Includes 1 bond wire on Gate, 1 bond wire on Drain, and 3 bond wires on each Source pad.  
Datasheet: Rev. D 11-04-13  
Disclaimer: Subject to change without notice  
- 3 of 8 -  
© 2013 TriQuint  
www.triquint.com  
TGF2018  
180 um Discrete GaAs pHEMT  
Noise Parameters  
VDSꢀ=ꢀ2ꢀV, IDSꢀ=ꢀ28ꢀmA, Temperatureꢀ=ꢀ25°C  
VDSꢀ=ꢀ2 V, IDSꢀ=ꢀ14 mA, Temperatureꢀ=ꢀ25°C  
Frequency NFmin  
Rn/50  
Ω
Gamma  
Frequency NFmin  
Rn/50  
Ω
Gamma  
GHz  
2
dB  
Mag.  
Angle  
17.58  
GHz  
2
dB  
Mag.  
Angle  
16.41  
0.57  
0.62  
0.61  
0.64  
0.70  
0.78  
0.85  
0.93  
1.00  
1.08  
1.17  
1.24  
1.32  
1.38  
1.46  
1.52  
1.60  
1.67  
1.73  
1.82  
1.92  
2.01  
2.06  
2.09  
2.15  
0.291  
0.283  
0.275  
0.265  
0.249  
0.230  
0.210  
0.192  
0.173  
0.155  
0.138  
0.123  
0.111  
0.100  
0.092  
0.085  
0.082  
0.081  
0.083  
0.090  
0.102  
0.116  
0.132  
0.144  
0.155  
0.71  
0.68  
0.65  
0.62  
0.59  
0.56  
0.54  
0.52  
0.50  
0.48  
0.47  
0.46  
0.46  
0.45  
0.45  
0.45  
0.46  
0.47  
0.48  
0.49  
0.51  
0.53  
0.55  
0.57  
0.59  
0.48  
0.50  
0.49  
0.51  
0.55  
0.59  
0.64  
0.68  
0.74  
0.80  
0.85  
0.90  
0.95  
0.99  
1.04  
10.9  
1.14  
1.17  
1.18  
1.25  
1.34  
1.43  
1.46  
1.50  
1.54  
0.257  
0.251  
0.243  
0.236  
0.223  
0.209  
0.194  
0.179  
0.164  
0.148  
0.136  
0.121  
0.108  
0.096  
0.086  
0.077  
0.071  
0.066  
0.064  
0.066  
0.073  
0.072  
0.093  
0.103  
0.111  
0.75  
0.73  
0.70  
0.67  
0.64  
0.62  
0.59  
0.57  
0.55  
0.53  
0.52  
0.50  
0.49  
0.48  
0.47  
0.46  
0.46  
0.46  
0.45  
0.45  
0.46  
0.46  
0.47  
0.48  
0.48  
3
23.87  
3
21.69  
4
32.18  
4
28.68  
5
41.66  
5
36.7  
6
51.44  
6
45.03  
7
61.44  
7
53.61  
8
71.62  
8
62.42  
9
81.92  
9
71.41  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
92.27  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
23  
24  
25  
26  
80.53  
102.61  
112.89  
123.06  
133.04  
142.78  
152.22  
161.31  
169.98  
178.18  
-174.16  
-167.09  
-160.67  
-154.96  
-150.02  
-146.14  
-143.51  
89.74  
99.01  
108.29  
117.54  
126.71  
135.77  
144.67  
153.37  
161.83  
170.00  
177.85  
-174.66  
-167.58  
-160.96  
-155.33  
-151.18  
Datasheet: Rev. D 11-04-13  
Disclaimer: Subject to change without notice  
- 4 of 8 -  
© 2013 TriQuint  
www.triquint.com  
TGF2018  
180 um Discrete GaAs pHEMT  
RF Tuned Data at 12 GHz  
Bias conditions unless otherwise noted: VDꢀ=ꢀ8ꢀV, IDQꢀ=ꢀ50% IDSS, Fꢀ=ꢀ12 GHz  
Gain / Pout / PAE vs. Pin  
30  
25  
20  
15  
10  
5
60%  
50%  
40%  
30%  
20%  
10%  
0%  
Temp.=+25°  
Pout  
Gain  
PAE  
0
-10  
-5  
0
5
10  
Pin (dBm)  
Gain / PAE vs. Pout  
30  
25  
20  
15  
10  
5
60%  
50%  
40%  
30%  
20%  
10%  
0%  
Temp.=+25°C  
Gain  
PAE  
0
5
10  
15  
20  
25  
Pout (dBm)  
Datasheet: Rev. D 11-04-13  
Disclaimer: Subject to change without notice  
- 5 of 8 -  
© 2013 TriQuint  
www.triquint.com  
TGF2018  
180 um Discrete GaAs pHEMT  
Typical Performance − Various Bias Conditions  
NFmin and Associated Gain vs. Frequency  
25  
20  
15  
10  
5
5
4
3
2
1
0
Temp.=+25°C  
VDS=+5 V, IDS= 28 mA  
Gain  
NFmin  
0
2
2
2
6
10  
14  
18  
22  
26  
26  
26  
Frequency (GHz)  
NFmin and Associated Gain vs. Frequency  
25  
20  
15  
10  
5
5
4
3
2
1
0
Temp.=+25°C  
VDS=+2 V, IDS= 28 mA  
Gain  
NFmin  
0
6
10  
14  
18  
22  
Frequency (GHz)  
NFmin and Associated Gain vs. Frequency  
25  
20  
15  
10  
5
5
4
3
2
1
0
VDS=+2 V, IDS= 14 mA  
Temp.=+25°C  
Gain  
NFmin  
0
6
10  
14  
18  
22  
Frequency (GHz)  
Datasheet: Rev. D 11-04-13  
Disclaimer: Subject to change without notice  
- 6 of 8 -  
© 2013 TriQuint  
www.triquint.com  
TGF2018  
180 um Discrete GaAs pHEMT  
DC Characteristics  
Drain Current vs. Drain Voltage  
100  
Temp.=+25°C  
80  
60  
40  
20  
0
VGS= 0.0ꢀV  
GS=-0.1ꢀV  
V
VGS  
=
=
‐0.2ꢀV  
‐0.3ꢀV  
VGS  
VGS=  
VGS=  
VGS=  
‐0.4ꢀV  
‐0.5ꢀV  
‐0.6V  
VGS  
=
=
‐0.7ꢀV  
‐0.8V  
VGS  
VGS  
=
=
‐0.9ꢀV  
‐1.0ꢀV  
VGS  
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0  
Drain Voltage, VDS (V)  
Assembly Notes  
Component placement and adhesive attachment assembly notes:  
Vacuum pencils and/or vacuum collets are the preferred method of pick up.  
Air bridges must be avoided during placement.  
The force impact is critical during auto placement.  
Organic attachment (i.e. epoxy) can be used in low-power applications.  
Curing should be done in a convection oven; proper exhaust is a safety concern.  
Reflow process assembly notes:  
Recommend Eutectic die attach with AuSn (80/20) solder and limit exposure to temperatures above 300C to 30  
seconds, maximum.  
An alloy station or conveyor furnace with reducing atmosphere should be used.  
Do not use any kind of flux.  
Coefficient of thermal expansion matching is critical for long-term reliability.  
Devices must be stored in a dry nitrogen atmosphere.  
Interconnect process assembly notes:  
Either Thermo-compression Wedge Bonding or Thermosonic Ball Bonding can be used to bond onto the die.  
Force, time, and ultrasonics are critical bonding parameters.  
Aluminum wire should not be used.  
Devices with small pad sizes should be bonded with 0.0008-inch wire.  
Datasheet: Rev. D 11-04-13  
Disclaimer: Subject to change without notice  
- 7 of 8 -  
© 2013 TriQuint  
www.triquint.com  
TGF2018  
180 um Discrete GaAs pHEMT  
Product Compliance Information  
ESD Sensitivity  
RoHs Compliance  
This part is compliant with EU 2002/95/EC RoHS  
directive (Restrictions on the Use of Certain Hazardous  
Substances in Electrical and Electronic Equipment).  
Caution! ESD-Sensitive Device  
This product also has the following attributes:  
GaAs devices are susceptible to damage from Electrostatic  
Discharge. Proper precautions should be observed during  
handling, assembly and test.  
Lead Free  
Halogen Free (Chlorine, Bromine)  
Antimony Free  
TBBP-A (C15H12Br402) Free  
PFOS Free  
SVHC Free  
Not HAST compliant.  
Contact Information  
For the latest specifications, additional product information, worldwide sales and distribution locations, and information  
about TriQuint:  
Web: www.triquint.com  
Email: info-sales@triquint.com  
Tel:  
Fax:  
+1.503.615.9000  
+1.503.615.8902  
For technical questions and application information:  
Email: info-networks@triquint.com  
Important Notice  
The information contained herein is believed to be reliable. TriQuint makes no warranties regarding the information  
contained herein. TriQuint assumes no responsibility or liability whatsoever for any of the information contained  
herein. TriQuint assumes no responsibility or liability whatsoever for the use of the information contained herein. The  
information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with  
such information is entirely with the user. All information contained herein is subject to change without notice.  
Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The  
information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any  
patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or  
anything described by such information.  
TriQuint products are not warranted or authorized for use as critical components in medical, life-saving, or life-  
sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal  
injury or death.  
Datasheet: Rev. D 11-04-13  
Disclaimer: Subject to change without notice  
- 8 of 8 -  
© 2013 TriQuint  
www.triquint.com  

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