1N5374B [TRSYS]

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE; 玻璃钝化结硅稳压二极管


型号：	1N5374B
厂家：	TRANSYS Electronics Limited
描述：	GLASS PASSIVATED JUNCTION SILICON ZENER DIODE 玻璃钝化结硅稳压二极管稳压二极管测试
文件：	总5页 (文件大小：270K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

1N5348B THRU 1N5388B

GLASS PASSIVATED JUNCTION SILICON ZENER DIODE

VOLTAGE - 11 TO 200 Volts Power - 5.0 Watts

DO-201AE

FEATURES

Low profile package

Built-in strain relief

Glass passivated junction

Low inductance

Typical I_Dless than 1 A above 13V

High temperature soldering :

260 /10 seconds at terminals

Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

MECHANICAL DATA

Case: JEDEC DO-201AE Molded plastic over passivated junction

Terminals: Solder plated, solderable per MIL-STD-750,

method 2026

Standard Packaging: 52mm tape

Weight: 0.04 ounce, 1.1 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 ambient temperature unless otherwise specified.

SYMBOL

P_D

VALUE

5.0

40.0

UNITS

Watts

mW/

DC Power Dissipation @ T_L=75 , Measure at Zero Lead Length(Fig. 1)

Derate above 75 (Note 1)

Peak forward Surge Current 8.3ms single half sine-wave superimposed on rated

load(JEDEC Method) (Note 1,2)

I_FSM

See Fig. 5

Amps

Operating Junction and Storage Temperature Range

T_J,T_STG

-55 to +150

NOTES:

1. Mounted on 8.0mm²copper pads to each terminal.

2. 8.3ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minute maximum.

1N5348B THRU 1N5388B

ELECTRICAL CHARACTERISTICS (T_A=25 unless otherwise noted, V_F=1.2 Max @ I_F=1A for all types.

Max reverse

Nominal Zener

Voltage Vz @ I_ZT

volts

Maximum Zener

Impedance

Maximum

Regulator

Current

Leakage

Current

Test current

I_ZT

Max Surge

Current Ir Amps Regulation

Max Voltage

Type No.

(Note 1.)

Vz, Volts

Z_ZT@ I_ZT

Z_Zk@ I_ZK= 1 mA

I_R

V_R

I_ZMmA

(Note 3.)

Ohms

Volts

(Note 4.)

(Note 5.)

(Note 2.)

2.5

(Note 2.)

125

100

1N5348B

1N5349B

1N5350B

1N5351B

1N5352B

1N5353B

1N5354B

1N5355B

1N5356B

1N5357B

1N5358B

1N5359B

1N5360B

1N5361B

1N5362B

1N5363B

1N5364B

1N5365B

1N5366B

1N5367B

1N5368B

1N5369B

1N5370B

1N5371B

1N5372B

1N5373B

1N5374B

1N5375B

1N5376B

1N5377B

1N5378B

1N5379B

1N5380B

1N5381B

1N5382B

1N5383B

1N5384B

1N5385B

1N5386B

1N5387B

1N5388B

125

100

8.4

9.1

7.5

6.7

6.3

0.25

0.3

0.35

0.4

0.45

0.55

0.6

0.65

0.7

0.8

0.9

1.2

1.35

1.5

1.6

1.8

2.2

2.5

430

395

365

340

315

295

280

265

250

237

216

198

190

176

170

158

144

132

122

110

100

54.5

52.5

47.5

39.5

36.6

31.6

29.4

26.4

9.9

10.6

11.5

12.2

12.9

13.7

14.4

15.2

16.7

18.2

20.6

21.2

22.8

25.1

27.4

29.7

32.7

35.8

38.8

42.6

45.5

47.1

51.7

0.5

5.8

5.5

5.3

5.1

4.7

4.4

4.3

4.1

3.9

3.7

3.5

3.3

3.1

2.8

2.7

2.5

2.3

2.2

2.1

1.9

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

3.5

100

110

120

130

140

150

160

170

190

210

230

280

350

400

500

620

720

760

800

1000

1150

1250

1500

1650

1750

1850

62.2

69.2

100

110

120

130

140

150

160

170

180

190

200

125

170

190

230

330

35 0

380

430

450

480

83.6

91.2

98.8

106

114

122

129

137

144

152

0.9

23.6

NOTE:

1. TOLERANCE AND VOLTAGE DESIGNATION - The JEDEC type numbers shown indicate a tolerance of ±10% with

guaranteed limits on only Vz, I_R, I_r, and V_Fas shown in the electrical characteristics table. Units with guaranteed limits

on all seven parameters are indicated by suffix “B” for ±5% tolerance.

2. ZENER VOLTAGE (Vz) AND IMPEDANCE (Z_ZT& Z_ZK) - Test conditions for Zener voltage and impedance are as

follows; Iz is applied 40±10 ms prior to reading. Mounting contacts are located from the inside edge of mounting

clips to the body of the diode.(T_A=25

3. SURGE CURRENT (Ir) - Surge current is specified as the maximum allowable peak, non-recurrent square-wave

current with a pulse width, PW, of 8.3 ms. The data given in Figure 5 may be used to find the maximum surge

current for a quare wave of any pulse width between 1 ms and 1000ms by plotting the applicable points on

logarithmic paper. Examples of this, using the 6.8v and 200V zeners, are shown in Figure 6. Mounting

contact located as specified in Note 3. (T_A=25

4. VOLTAGE REGULATION ( Vz) - Test conditions for voltage regulation are as follows: Vz measurements are made

at 10% and then at 50% of the Iz max value listed in the electrical characteristics table. The test currents are the

same for the 5% and 10% tolerance devices. The test current time druation for each Vz measurement is 40±10 ms.

(T_A=25

). Mounting contact located as specified in Note2.

5. MAXIMUM REGULATOR CURRENT (I_ZM) - The maximum current shown is based on the maximum voltage of a

5% type unit. Therefore, it applies only to the B-suffix device. The actual I_ZMfor any device may not exceed the

value of 5 watts divided by the actual Vz of the device. T_L=75 at maximum from the device body.

RATING AND CHARACTERISTICS CURVES

1N5348B THRU 1N5388B

TEMPERATURE COEFFICIENTS

Fig. 1-POWER TEMPERATURE DERATING CURVE

Fig. 2-TEMPERATURE COEFFICIENT RANGE

FOR UNITS 6 TO 220 VOLTS

Fig. 3-TYPICAL THERMAL RESPONSE

Fig. 4-TYPICAL THERMAL RESISTANCE

Fig. 5-MAXIMUM NON-REPETITIVE SURGE CURRENT

VERSUS NOMINAL ZENER VOLTAGE(SEE NOTE 3)

RATING AND CHARACTERISTICS CURVES

1N5348B THRU 1N5388B

Fig. 6-PEAK SURGE CURRENT VERSUS PULSE

WIDTH(SEE NOTE 3)

Fig. 7-ZENER VOLTAGE VERSUS ZENER CURRENT

V_Z=6.8 THRU 10 VOLTS

Fig. 8- ZENER VOLTAGE VERSUS ZENER CURRENT

V_Z= 11 THRU 75 VOLTS

Fig. 9- ZENER VOLTAGE VERSUS ZENER CURRENT

V_Z= 82 THRU 200 VOLTS

APPLICATION NOTE:

Since the actual voltage available from a given zener

diode is temperature dependent, it is necessary to

determine junction temperature under any set of

operating conditions in order to calculate its value. The

following procedure is recommended:

Lead Temperature, T_L, should be determined from:

T_L= _LAP_D+ T_A

_LAis the lead-to-ambient thermal resistance ( /W)

and P_Dis the power dissipation.

Junction Temperature, T_J, may be found from:

T_J= T_L+ T_JL

T_JLis the increase in junction temperature above the

lead temperature and may be found from Figure 3 for a

train of power pulses or from Figure 4 for dc power.

T_JL= _JLP_D

For worst-case design, using expected limits of Iz, limits

of P_Dand the extremes of T_J( T_J) may be estimated.

Changes in voltage, Vz, can then be found from:

V =

T_J

_VZ, the zener voltage temperature coefficient, is fount

from Figures 2.

Under high power-pulse operation, the zener voltage will

vary with time and may also be affected significantly be

the zener resistance. For best regulation, keep current

excursions as low as possible.

Data of Figure 3 should not be used to compute surge

capability. Surge limitations are given in Figure 5. They

are lower than would be expected by considering only

junction temperature, as current crowding effects cause

temperatures to be extremely high in small spots

resulting in device degradation should the limits of

Figure. 5 be exceeded.

相关型号：