MMSTA42 [TRSYS]
Plastic-Encapsulated Transistors; 塑料封装晶体管
| 型号： | MMSTA42 |
| 厂家： | 
TRANSYS Electronics Limited |
| 描述： | Plastic-Encapsulated Transistors |
| 文件： | 总1页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Transys
Electronics
L
I M I T E D
SOT-323 Plastic-Encapsulated Transistors
SOT-323
MMSTA42 TRANSISTOR (NPN)
FEATURES
1. BASE
2. EMITTER
3. COLLECTOR
Power dissipation
PCM:
0.2
0.3
W (Tamb=25℃)
Collector current
ICM:
A
V
Collector-base voltage
V(BR)CBO 310
:
Unit: mm
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test conditions
Ic= 100µA, IE=0
Ic= 1 mA, IB=0
MIN
310
305
5
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
IE= 100µA, IC=0
VCB=200V, IE=0
0.25
0.1
µA
µA
IEBO
VEB= 5V, IC=0
Emitter cut-off current
HFE(1)
VCE= 10V, IC= 1mA
VCE= 10V, IC=10mA
VCE=10V, IC=30mA
IC=20 mA, IB= 2mA
IC= 20 mA, IB=2mA
60
100
75
DC current gain
HFE(2)
200
HFE(3)
VCE(sat)
VBE(sat)
0.2
0.9
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE= 20V, IC= 10mA
50
MHz
Transition frequency
fT
f=30MHz
DEVICE MARKING
MMSTA42=K3M
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