RB521S-30 [TRSYS]
Schottky barrier Diodes; 肖特基势垒二极管
| 型号： | RB521S-30 |
| 厂家： | 
TRANSYS Electronics Limited |
| 描述： | Schottky barrier Diodes |
| 文件： | 总2页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RB521S-30 Schottky barrier Diodes
FEATURES
z Small surface mounting type
z Low reverse current and low forward voltage
z High reliability
Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter
DC reverse voltage
Symbol
VR
Limits
30
Unit
V
Mean rectifying current
Peak forward surge current
Junction temperature
Storage temperature
IO
200
mA
A
IFSM
Tj
1
℃
125
℃
Tstg
-40~+125
Electrical Ratings @TA=25℃
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Forward voltage
Reverse current
VF
IR
0.5
30
V
IF=200mA
VR=10V
µA
Typical Characteristics
RB521S-30
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