TSD2N60M [TRUMPOWER]
600V N-Channel MOSFET; 600V N沟道MOSFET
| 型号： | TSD2N60M |
| 厂家： | 
Tumbler Technologies + TRUMPower |
| 描述： | 600V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：226K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
深圳德江源电子有限公司 0755-82966416 15989331311
TSD2N60M / TSU2N60M
600V N-Channel MOSFET
General Description
Features
This Power MOSFET is produced using Truesemi‘s
advanced planar stripe DMOS technology.
•
•
•
•
•
•
1.9A, 600V, RDS(on) = 5.00Ω @VGS = 10 V
Low gate charge ( typical 9nC)
High ruggedness
Fast switching
100% avalanche tested
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction based on half bridge
topology.
Improved dv/dt capability
{D
●
G
◀
▲
D
G
D
●
●
G
{
S
S
I-PAK ( TO-251 )
D-PAK ( TO-252 )
{S
Absolute Maximum Ratings
T
= 25°Cunless otherwise noted
C
Symbol
VDSS
Parameter
TSD2N60M / TSU2N60M
Units
V
Drain-Source Voltage
600
1.9
ID
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Drain Current
A
1.14
7.6
A
IDM
(Note 1)
Drain Current
A
VGSS
EAS
EAR
Gate-Source Voltage
± 30
120
V
(Note 2)
(Note 1)
(Note 3)
Single Pulsed Avalanche Energy
mJ
mJ
V/ns
W
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C)
4.4
dv/dt
PD
4.5
44
- Derate above 25°C
Operating and Storage Temperature Range
0.35
-55 to +150
W/°C
°C
TJ, TSTG
TL
Maximum lead temperature for soldering purposes,
300
°C
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Typ
Max
2.87
50
Symbol
RθJC
Parameter
Units
°C/W
°C/W
°C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
-
-
-
RθJA
RθJA
110
TSD2N60M / TSU2N60M
Electrical Characteristics
T = 25°C unless otherwise noted
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
VGS = 0 V, ID = 250 µA
D = 250 µA, Referenced to 25°C
Drain-Source Breakdown Voltage
600
--
--
--
--
V
∆BVDSS
Breakdown Voltage Temperature
I
0.7
V/°C
/
∆TJ Coefficient
IDSS
V
V
DS = 600 V, VGS = 0 V
DS = 480 V, TC = 125°C
--
--
--
--
--
--
--
--
1
µA
µA
nA
nA
Zero Gate Voltage Drain Current
10
IGSSF
IGSSR
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
On Characteristics
VGS(th)
VDS = VGS, ID = 250 µA
Gate Threshold Voltage
2.0
--
--
4.0
5.0
V
RDS(on)
Static Drain-Source
On-Resistance
V
GS = 10 V, ID
=
0.95 A
4.1
Ω
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
200
20
4
--
--
--
pF
pF
pF
V
DS = 25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
10
25
25
30
9
--
--
--
--
-
ns
ns
VDD = 300 V, ID
=
=
2.0A,
RG = 25 Ω
ns
(Note 4, 5)
(Note 4, 5)
ns
Qg
nC
nC
nC
V
DS = 480 V, ID
2.0 A,
Qgs
Qgd
1.5
4.0
--
--
VGS = 10 V
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
1.9
7.6
1.4
--
A
A
ISM
VSD
trr
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 1.9 A
GS = 0 V, IS = 2.0 A,
dIF / dt = 100 A/µs
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
V
230
1.0
ns
µC
(Note 4)
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 56 mH, I
=
2.0 A, V = 50V, R = 25 Ω, Starting T = 25°C
AS
DD
G
J
3. I
≤
2.0 A, di/dt ≤ 200A/µs, V ≤ BV
Starting T = 25°C
SD
DD
DSS,
J
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Typical Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Typical Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 11. Transient Thermal Response Curve
Gate Charge Test Circuit & Waveform
V
GS
Same Type
as DUT
50KΩ
Q
g
200nF
12V
10V
300nF
V
DS
V
GS
Q
gs
Q
gd
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
R
L
V
DS
90%
V
DS
V
DD
V
GS
R
G
V 10%
GS
DUT
10V
t
d(on)
t
r
t
d(off)
t
f
ton
toff
Unclamped Inductive Switching Test Circuit & Waveforms
BV
DSS
---- --------------------
L
1
E = LI
2
2
AS
AS
V
DS
BV -V
DSS DD
BV
DSS
I
ID
AS
R
G
V
DD
ID(t)
V (t)
DS
V
DD
DUT
10V
tp
tp
Time
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
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