ES2H [TSC]

2.0 AMPS. Surface Mount Super Fast Rectifiers; 2.0安培。表面贴装超快速整流器


型号：	ES2H
厂家：	TAIWAN SEMICONDUCTOR COMPANY, LTD
描述：	2.0 AMPS. Surface Mount Super Fast Rectifiers 2.0安培。表面贴装超快速整流器
文件：	总2页 (文件大小：185K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ES2A - ES2J

2.0 AMPS. Surface Mount Super Fast Rectifiers

SMB/DO-214AA

.083(2.10)

.077(1.95)

.147(3.73)

.137(3.48)

Features

ꢀ

Glass passivated junction chip

For surface mounted application

Low profile package

.187(4.75)

.167(4.25)

.012(.31)

.006(.15)

Built-in strain relief

Ideal for automated placement

Easy pick and place

Superfast recovery time for high efficiency

Glass passivated chip junction

.103(2.61)

.078(1.99)

.012(.31)

.006(.15)

High temperature soldering:

260 C/10 seconds at terminals

.056(1.41)

.035(0.90)

.008(.20)

.004(.10)

ꢀ

Plastic material used carries Underwriters

Laboratory Classification 94V-0

.209(5.30)

.201(5.10)

Mechanical Data

ꢀ

Cases: Molded plastic

Dimensions in inches and (millimeters)

Terminals: Pure tin plated, lead free.

Polarity: Indicated by cathode band

Packing: 12mm tape per EIA STD RS-481

Weight: 0.093 gram

Maximum Ratings and Electrical Characteristics

Rating at 25 C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

Symbol ES ES ES ES ES ES ES ES

2A 2B 2C 2D 2F 2G 2H 2J

50 100 150 200 300 400 500 600

Type Number

Units

Maximum Recurrent Peak Reverse

Voltage

V_RRM

Maximum RMS Voltage

50 100 150 200 300 400 500 600

2.0

70 105 140 210 280 350 420

V_RMS

V_DC

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current See Fig. 1

I_(AV)

I_FSM

V_F

Peak Forward Surge Current, 8.3 ms

Single Half Sine-wave Superimposed on

Rated Load (JEDEC method )

Maximum Instantaneous Forward Voltage

@ 2.0A

0.95

1.3

1.7

Maximum DC Reverse Current

@T_A=25 C at Rated DC Blocking Voltage

I_R

@ T_A=100 C

350

Maximum Reverse Recovery Time

( Note 1 )

Trr

Typical Junction Capacitance ( Note 2 )

R_θJA

R_θJL

T_J

Maximum Thermal Resistance (Note 3)

C /W

Operating Temperature Range

Storage Temperature Range

-55 to +150

T^STG

1. Reverse Recovery Test Conditions: I^F=0.5A, IR=1.0A, IRR=0.25A

2. Measured at 1 MHz and Applied V^R=4.0 Volts

Notes:

3. Units Mounted on P.C.B. 0.4” x 0.4” (10mm x 10mm) Pad Areas

Version: A06

RATINGS AND CHARACTERISTIC CURVES (ES2A THRU ES2J)

FIG.1- MAXIMUM FORWARD CURRENT DERATING

CURVE

FIG.2- TYPICAL REVERSE CHARACTERISTICS

1000

3.0

2.0

RESISTIVE OR

INDUCTIVE LOAD

0.4X0.4"(10X10mm)

COPPER PAD AREAS

100

Tj=125⁰C

1.0

Tj=85⁰C

Tj=25⁰C

100

110

120

130

140

150

LEAD TEMPERATURE. (^oC)

0.1

FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD

SURGE CURRENT

8.3ms Single Half Sine Wave

(JEDEC Method) at TL=120^oC

0.01

100

120

140

PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)

FIG.5- TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

Tj=25⁰C

PULSE WIDTH-300

1% DUTY CYCLE

100

NUMBER OF CYCLES AT 60Hz

FIG.4- TYPICAL JUNCTION CAPACITANCE

ES2A

ES2F

Tj=25⁰C

f=1.0MHz

Vsig=50mVp-p

ES2H

0.1

0.01

100

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

REVERSE VOLTAGE. (V)

FORWARD VOLTAGE. (V)

FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM

50W

NONINDUCTIVE

10W

NONINDUCTIVE

trr

+0.5A

(-)

DUT

(+)

PULSE

GENERATOR

(NOTE 2)

50Vdc

(approx)

(-)

-0.25A

OSCILLOSCOPE

(NOTE 1)

(+)

NON

INDUCTIVE

-1.0A

NOTES: 1. Rise Time=7ns max. Input Impedance=

1 megohm 22pf

1cm

SET TIME BASE FOR

5/ 10ns/ cm

2. Rise Time=10ns max. Sourse Impedance=

50 ohms

Version: A06

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