HER107G-K [TSC]

1A, 50V - 1000V Glass Passivated High Efficient Rectifier;


型号：	HER107G-K
厂家：	TAIWAN SEMICONDUCTOR COMPANY, LTD
描述：	1A, 50V - 1000V Glass Passivated High Efficient Rectifier
文件：	总7页 (文件大小：412K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

HER101G-K - HER108G-K

Taiwan Semiconductor

1A, 50V - 1000V Glass Passivated High Efficient Rectifier

FEATURES

KEY PARAMETERS

● Glass passivated chip junction

● High current capability, Low V_F

● High reliability

PARAMETER

I_F(AV)

V_RRM

VALUE

UNIT

50 - 1000

● High surge current capability

I_FSM

● Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

● Halogen-free according to IEC 61249-2-21

T_{J MAX}

150

°C

Package

Configuration

DO-204AL (DO-41)

Single die

APPLICATIONS

● Switching mode power supply (SMPS)

● Adapters

● TV

● Monitor

MECHANICAL DATA

● Case: DO-204AL (DO-41)

● Molding compound meets UL 94V-0 flammability rating

● Packing code with suffix "G" means green compound

(halogen-free)

● Terminal: Pure tin plated leads, solderable per J-STD-002

● Meet JESD 201 class 1A whisker test

● Polarity: As marked

● Weight: 0.33 g (approximately)

DO-204AL (DO-41)

ABSOLUTE MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

HER

101

G-K

HER

102

G-K

HER

103

G-K

HER

104

G-K

HER

105

G-K

HER

106

G-K

HER

107

G-K

HER

108

G-K

PARAMETER

SYMBOL

UNIT

HER101 HER102 HER103 HER104 HER105 HER106 HER107 HER108

Marking code on the device

Repetitive peak reverse

voltage

V_RRM

100

200

300

400

600

800

1000

Reverse voltage, total rms

value

V_R(RMS)

I_F(AV)

140

210

280

420

560

700

Forward current

Surge peak forward current,

8.3 ms single half sine-wave

superimposed on rated load

per diode

I_FSM

Junction temperature

Storage temperature

T_J

- 55 to +150

°C

T_STG

Version:A1703

HER101G-K - HER108G-K

Taiwan Semiconductor

THERMAL PERFORMANCE

PARAMETER

SYMBOL

R_ӨJA

LIMIT

UNIT

°C/W

Junction-to-ambient thermal resistance

Junction-to-case thermal resistance

R_ӨJC

ELECTRICAL SPECIFICATIONS (T_A= 25°C unless otherwise noted)

PARAMETER

CONDITIONS

SYMBOL

TYP

MAX

UNIT

HER101G-K

HER102G-K

HER103G-K

HER104G-K

HER105G-K

HER106G-K

HER107G-K

HER108G-K

1.0

Forward voltage per diode ⁽¹⁾

I_F= 1A,T_J= 25°C

V_F

1.3

1.7

µA

T_J= 25°C

Reverse current @ rated V_Rper diode ⁽²⁾

I_R

150

T_J= 125°C

HER101G-K

HER102G-K

HER103G-K

HER104G-K

HER105G-K

HER106G-K

HER107G-K

HER108G-K

HER101G-K

HER102G-K

HER103G-K

HER104G-K

HER105G-K

HER106G-K

HER107G-K

HER108G-K

Junction capacitance

1 MHz, V_R=4.0V

C_J

I_F=0.5A , I_R=1.0A

I_RR=0.25A

Reverse recovery time

t_rr

Notes:

1. Pulse test with PW=0.3 ms

2. Pulse test with PW=30 ms

Version:A1703

HER101G-K - HER108G-K

Taiwan Semiconductor

ORDERING INFORMATION

PACKING

PACKING CODE

SUFFIX

PART NO.

PACKAGE

PACKING

CODE

DO-41

3,000 / Ammo box (52mm taping)

5,000 / 13" Paper reel

HER10xG-K

(Note 1, 2)

5,000 / 13" Paper reel (Reverse)

1,000 / Bulk packing

Notes:

1. "x" defines voltage from 50V (HER101G-K) to 1000V (HER108G-K)

2. Whole series with green compound (halogen-free)

EXAMPLE P/N

PACKING

PACKING CODE

EXAMPLE P/N

PART NO.

DESCRIPTION

CODE

SUFFIX

HER101G-K A0G

Green compound

HER101G-K

Version:A1703

HER101G-K - HER108G-K

Taiwan Semiconductor

CHARACTERISTICS CURVES

(T_A= 25°C unless otherwise noted)

Fig.1 Forward Current Derating Curve

Fig.2 Typical Junction Capacitance

HER101G-K - HER105G-K

RESISTIVE OR

INDUCTIVE LOAD

HER106G-K - HER108G-K

100

125

150

175

0.1

100

1000

AMBIENT TEMPERATURE (^oC)

REVERSE VOLTAGE (V)

Fig.3 Typical Reverse Characteristics

Fig.4 Typical Forward Characteristics

1000

100

HER101G-K - HER104G-K

HER105G-K

T_J=100°C

T_J=75^°C

T_J=25^°C

HER106G-K - HER108G-K

0.1

100

120

140

0.4

0.6

0.8

1.2

1.4

1.6

1.8

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

FORWARD VOLTAGE (V)

Version:A1703

HER101G-K - HER108G-K

Taiwan Semiconductor

CHARACTERISTICS CURVES

(T_A= 25°C unless otherwise noted)

Fig.5 Maximum Non-repetitive Forward Surge Current

8.3ms Single Half Sine Wave

100

NUMBER OF CYCLES AT 60 Hz

Fig.6 Reverse Recovery Time Characteristic And Test Circuit Diagram

Version:A1703

HER101G-K - HER108G-K

Taiwan Semiconductor

PACKAGE OUTLINE DIMENSIONS

DO-204AL (DO-41)

Unit (mm)

Unit (inch)

DIM.

Min

2.00

Max

Min

Max

2.70

0.86

0.079

0.028

1.000

0.165

1.000

0.106

0.71

0.034

25.40

4.20

0.205

5.20

25.40

MARKING DIAGRAM

P/N

= Marking Code

= Green Compound

YWW = Date Code

= Factory Code

Version:A1703

HER101G-K - HER108G-K

Taiwan Semiconductor

Notice

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,

assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, to

any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of

sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,

relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,

merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify TSC for any damages resulting from such improper use or sale.

Version:A1703

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