HERAF1601G_12 [TSC]
16.0AMPS. Isolated Glass Passivated High Efficient Rectifiers; 16.0AMPS 。隔离玻璃钝化高效整流二极管
| 型号： | HERAF1601G_12 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 16.0AMPS. Isolated Glass Passivated High Efficient Rectifiers |
| 文件： | 总2页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CREAT BY ART
HERAF1601G - HERAF1608G
16.0AMPS. Isolated Glass Passivated High Efficient Rectifiers
ITO-220AC
RoHS
Pb
COMPLIANCE
Features
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UL Recognized File # E-326243
Glass passivated chip junction
High efficiency, Low VF
High current capability
High reliability
High surge current capability
For use in low voltage, high frequency inventor,
free wheeling, and polarity protection application
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Green compound with suffix "G" on packing
code & prefix "G" on datecode
Mechanical Data
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Cases: ITO-220AC Molded plastic
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Epoxy: UL 94V-0 rate flame retardant
Dimensions in inches and (millimeters)
Marking Diagram
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Terminals: Pure tin plated, lead free, solderable per
MIL-STD-202, Method 208 guaranteed
HERAF160XG
= Specific Device Code
= Green Compound
= Year
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Polarity: As marked
G
Y
High temperature soldering guaranteed:
260℃/10 seconds 0.25", (6.35mm) from case
WW
= Work Week
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Mounting torque: 5 in-lbs. max
Weight: 1.74 grams
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF
1601G 1602G 1603G 1604G 1605G 1606G 1607G 1608G
Symbol
Units
Type Number
Maximum Recurrent Peak Reverse Voltage
VRRM
VRMS
VDC
50
35
50
100
200
140
200
300
210
300
400
280
400
600
420
600
800
560
800
1000
V
V
V
Maximum RMS Voltage
70
700
Maximum DC Blocking Voltage
100
1000
Maximum Average Forward Rectified Current
@ TC=100℃
IF(AV)
IFSM
VF
16
A
A
V
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method)
250
Maximum Instantaneous Forward Voltage (Note 1)
@ 16 A
1.0
1.3
1.7
10
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ TA=25 ℃
uA
uA
IR
@ TA=125 ℃
400
Maximum Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance
50
80
Trr
Cj
nS
150
110
pF
OC/W
OC
OC
RθJC
TJ
2.0
Operating Temperature Range
- 65 to + 150
- 65 to + 150
Storage Temperature Range
TSTG
Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C.
Version:E12
RATINGS AND CHARACTERISTIC CURVES (HERAF1601G THRU HERAF1608G)
FIG. 2- TYPICAL REVERSE CHARACTERISTICS
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
1000
100
10
20
16
12
8
TA=125℃
4
TA=25℃
0
0
50
100
150
1
CASE TEMPERATURE (oC)
0.1
0
20
40
60
80
100
120
140
FIG. 3- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
250
200
150
100
50
TA=25℃
8.3mS Single Half Sine Wave
JEDEC Method
FIG. 5- TYPICAL FORWARD CHARACTERISRICS
HERAF1601G-04G
100
0
10
1
1
10
100
NUMBER OF CYCLES AT 60 Hz
HERAF1605G
FIG. 4- TYPICAL JUNCTION CAPACITANCE
300
250
200
150
100
50
0.1
0.01
TA=25℃
HERAF1606G-08G
HERAF1601G-05G
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
HERAF1606G-08G
FORWARD VOLTAGE (V)
0
1
10
100
1000
REVERSE VOLTAGE (V)
Version:E12
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