LL914BL0 [TSC]
500mW High Speed SMD Switching Diode; 500mW的高速贴片开关二极管
| 型号： | LL914BL0 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 500mW High Speed SMD Switching Diode |
| 文件： | 总2页 (文件大小：100K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
LL4148/LL4448/LL914B
500mW High Speed SMD Switching Diode
Small Signal Diode
Mini-MELF (LL34)
HERMETICALLY SEALED GLASS
C
Features
Fast switching device(Trr<4.0nS)
Surface device type mounting
Moisture sensitivity level 1
B
D
Matte Tin(Sn) lead finish with Nickel(Ni) underplate
Pb free version and RoHS compliant
A
All External Surfaces are Corrosion Resistant and
Leads are Readily Solderable
Unit (mm)
Min Max
Unit (inch)
Min Max
Dimensions
Mechanical Data
A
B
C
D
Case : Mini-MELF Package (JEDEC DO-213AC)
High temperature soldering guaranteed : 270°C/10s
Polarity : Indicated by cathode band
Weight : 50.8 ± 0.5 mg
3.30 3.70 0.130 0.146
1.40 1.60 0.055 0.063
0.25 0.40 0.010 0.016
1.25 1.40 0.049 0.055
Ordering Information
Part No.
LLxxxx L1
LLxxxx L0
Packing
Package
Mini-MELF
Mini-MELF
2.5Kpcs / 7" Reel
10Kpcs / 13" Reel
Maximum Ratings and Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings
Type Number
Symbol
PD
Value
500
Units
mW
V
Power Dissipation
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Peak Forward Surge Current
VRSM
VRRM
100
75
V
IFSM
A
Pulse Width 8.3ms
2.0
450
Non-Repetitive Peak Forward Current
Mean Forward Current
IFM
IO
mA
mA
150
Thermal Resistance (Junction to Ambient) (Note 1)
Junction and Storage Temperature Range
RθJA
TJ, TSTG
300
°C/W
°C
-65 to + 200
Electrical Characteristics
Type Number
Symbol
Min
Max
Units
100
75
IR=100uA
Reverse Breakdown Voltage
IR=5uA
V(BR)
V
Forward Voltage
0.62
0.72
1.0
1.0
25
LL4448, LL914B
LL4148
IF=5.0mA
VF
V
IF=10.0mA
IF=100.0mA
VR=20V
LL4448, LL914B
nA
μA
pF
ns
Reverse Leakage Current
IR
5.0
4.0
4.0
VR=75V
CJ
Junction Capacitance
VR=0, f=1.0MHz
Trr
Reverse Recovery Time (Note 2)
Notes:1. Valid provided that electrodes are kept at ambient temperature
Notes:2. Reverse Recovery Test Conditions: IF=IR=10mA, RL=100Ω, IRR=1mA
Version : D09
LL4148/LL4448/LL914B
500mW High Speed SMD Switching Diode
Small Signal Diode
Rating and Sharacteristic Curves
FIG 1 Typical Forward Characteristics
FIG 2 Reverse Current vs Reverse Voltage
1
100
10
1
Ta=25°C
0.1
Ta=25°C
0.01
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
20
40
60
80
100
120
Forward Voltage (V)
Reverse Voltage (V)
FIG 3 Admissible Power Dissipation Curve
FIG 4 Typical Junction Capacitance
1.5
1.2
0.9
0.6
0.3
0
500
400
300
200
100
0
0
25
50
75
100
125
150
175
200
0
5
10
15
20
25
30
Reverse Voltage (V)
Ambient Temperature (°C)
FIG 5 Forward Resistance vs. Forward Current
10000
1000
100
10
1
0
0
1
10
100
Forward Current (mA)
Version : C09
相关型号：
©2020 ICPDF网 联系我们和版权申明