MBR10H100CT_11 [TSC]
10.0AMPS. Schottky Barrier Rectifiers; 10.0AMPS 。肖特基势垒整流器
| 型号： | MBR10H100CT_11 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 10.0AMPS. Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CREAT BY ART
MBR10H100CT - MBR10H200CT
10.0AMPS. Schottky Barrier Rectifiers
TO-220AB
RoHS
Pb
COMPLIANCE
Features
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in power supply - output rectification, power
management, instrumentation
Guard-ring for overvoltage protection
High temperature soldering guaranteed:
260℃/10 seconds,0.25", (6.35mm) from case
Green compound with suffix "G" on packing
code & prefix "G" on datecode
Dimensions in inches and (millimeters)
Marking Diagram
Mechanical Data
Cases: JEDEC TO-220AB molded plastic body
MBR10HXXCT = Specific Device Code
Terminals: Pure tin plated, lead free, solderable
per MIL-STD-750, Method 2026
G
= Green Compound
= Year
Polarity: As marked
Y
Mounting position:Any
Mounting torque: 5 in. - lbs, max
Weight: 1.88 grams
WW
= Work Week
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
MBR
10H100CT
MBR
10H150CT
MBR
10H200CT
Symbol
Units
Type Number
Maximum Recurrent Peak Reverse Voltage
VRRM
VRMS
VDC
100
150
200
V
V
V
Maximum RMS Voltage
70
105
150
140
200
Maximum DC Blocking Voltage
100
IF(AV)
Maximum Average Forward Rectified Current
10
10
A
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20KHz)
IFRM
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC Method)
IFSM
IRRM
120
A
A
Peak Repetitive Reverse Surge Current (Note 1)
1.0
0.5
Maximum Instantaneous Forward Voltage at: (Note 2)
IF=5A, TA=25℃
0.85
0.75
0.95
0.85
0.88
0.75
0.97
0.85
IF=5A, TA=125℃
VF
V
IF=10A, TA=25℃
IF=10A, TA=125℃
Maximum Instantaneous Reverse Current at Rated
DC Blocking Voltage @ TA=25 ℃
@ TA=125 ℃
5
1
uA
mA
IR
Voltage Rate of Change (Rated VR)
10,000
1.5
dV/dt
RθJC
TJ
V/us
OC/W
OC
Maximum Typical Thermal Resistance
Operating Junction Temperature Range
Storage Temperature Range
- 65 to + 175
- 65 to + 175
OC
TSTG
Note 1: 2.0uS Pulse Width, f=1.0 KHz
Note 2: Pulse Test : 300us Pulse Width, 1% Duty Cycle
Version:F11
RATINGS AND CHARACTERISTIC CURVES (MBR10H100CT THRU MBR10H200CT)
FIG.1- FORWARD CURRENT DERATING CURVE
FIG. 2- MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
12
10
8
180
8.3mS Single Half Sine Wave
JEDEC Method
150
120
90
6
4
60
RESISTIVE OR
INDUCTIVELOAD
2
30
0
0
0
25
50
75
100
125
150
175
1
10
100
CASE TEMPERATURE (oC)
NUMBER OF CYCLES AT 60 Hz
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
FIG. 3 TYPICAL FORWARD CHARACTERISRICS
10
1
1000
100
10
TA=25℃
PULSE WIDTH=300uS
1% DUTY CYCLE
TA=125℃
TA=75℃
0.1
TA=125℃
0.01
0.001
0.0001
TA=25℃
1
TA=25℃
0.1
0
20
40
60
80
100
120
140
0
0.2
0.4
0.6
0.8
1
1.2
1.4
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
FIG. 6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS PER LEG
FIG. 5- TYPICAL JUNCTION CAPACITANCE
10000
1000
100
100
10
1
TA=25℃
f=1.0MHz
Vsig=50mVp-p
0.1
0.1
1
10
100
0.01
0.1
1
10
100
REVERSE VOLTAGE (V)
T-PULSE DURATION (sec)
Version:F11
相关型号：
MBR10H150CT-E3
DIODE 5 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
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