MBR3060PTHC0 [TSC]

Dual Common Cathode Schottky Rectifier;


型号：	MBR3060PTHC0
厂家：	TAIWAN SEMICONDUCTOR COMPANY, LTD
描述：	Dual Common Cathode Schottky Rectifier
文件：	总4页 (文件大小：220K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

MBR3035PT thru MBR30200PT

Taiwan Semiconductor

CREAT BY ART

Dual Common Cathode Schottky Rectifier

FEATURES

- Low power loss, high efficiency

- Guardring for overvoltage protection

- High surge current capability

- UL Recognized File # E-326243

- Compliant to RoHS Directive 2011/65/EU and

in accordance to WEEE 2002/96/EC

- Halogen-free according to IEC 61249-2-21 definition

TO-247AD (TO-3P)

MECHANICAL DATA

Case: TO-247AD (TO-3P)

Molding compound, UL flammability classification rating 94V-0

Base P/N with suffix "G" on packing code - halogen-free

Base P/N with prefix "H" on packing code - AEC-Q101 qualified

Terminal: Matte tin plated leads, solderable per JESD22-B102

Meet JESD 201 class 1A whisker test

with prefix "H" on packing code meet JESD 201 class 2 whisker test

Polarity: As marked

Mounting torque: 10 in-lbs maximum

Weight: 6.1 g (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

MBR MBR MBR MBR MBR MBR MBR MBR

PARAMETER

SYMBOL 3035 3045 3050 3060 3090 30100 30150 30200 UNIT

100

150

105

150

200

140

200

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V_RRM

V_RMS

V_DC

Maximum DC blocking voltage

100

Maximum average forward rectified current

I_F(AV)

Peak repetitive forward current

(Rated V_R, Square wave, 20KHz)

I_FRM

Peak forward surge current, 8.3 ms single half sine-wave

superimposed on rated load

I_FSM

I_RRM

200

Peak repetitive reverse surge Current (Note 1)

Maximum instantaneous forward voltage (Note 2)

I_F=15A, T_J=25℃

0.75

0.85

0.95

0.92

1.02

0.98

1.05

I_F=15A, T_J=125℃

V_F

0.60

0.82

0.73

0.65

0.75

I_F=30A, T_J=25℃

1.10

I_F=30A, T_J=125℃

0.5

0.1

Maximum reverse current @ rated VR T_J=25 ℃

T_J=125 ℃

I_R

Voltage rate of change,(Rated V_R)

Typical thermal resistance

10,000

1.4

dV/dt

R_θJC

T_J

V/μs

^OC/W

^OC

Operating junction temperature range

Storage temperature range

- 55 to +150

^OC

T_STG

Note 1: 2.0μs Pulse Width, f=1.0KHz

Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle

Document Number: DS_D1309029

Version: J13

MBR3035PT thru MBR30200PT

Taiwan Semiconductor

ORDERING INFORMATION

AEC-Q101

QUALIFIED

GREEN COMPOUND

CODE

PACKING CODE

PACKAGE

PACKING

PART NO.

MBR30xxPT

Prefix "H"

(Note 1)

Suffix "G"

TO-3P

30 / Tube

Note 1: "xx" defines voltage from 35V (MBR3035PT) to 200V (MBR30200PT)

EXAMPLE

AEC-Q101

GREEN COMPOUND

CODE

PREFERRED P/N

PACKING CODE

DESCRIPTION

PART NO.

QUALIFIED

MBR3060PT C0

MBR3060PT C0G

MBR3060PTHC0

MBR3060PT

Green compound

AEC-Q101 qualified

RATINGS AND CHARACTERISTICS CURVES

(TA=25℃ unless otherwise noted)

FIG. 2 MAXIMUM FORWARD SURGE CURRENT

PER LEG

FIG.1 FORWARD CURRENT DERATING CURVE

225

200

175

150

125

100

8.3ms Single Half Sine Wave

JEDEC Method

RESISTIVE OR

INDUCTIVELOAD

WITH HEATSINK

100

125

150

100

CASE TEMPERATURE (℃)

NUMBER OF CYCLES AT 60 Hz

FIG. 4 TYPICAL REVERSE CHARACTERISTICS

PER LEG

FIG. 3 TYPICAL FORWARD CHARACTERISTICS

PER LEG

100

TJ=125℃

TJ=25℃

0.1

TJ=25℃

0.1

0.01

0.001

MBR3035PT-45PT

MBR3050PT-60PT

MBR3090PT-200PT

MBR3035PT-3045PT

MBR3050PT-30200PT

0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

FORWARD VOLTAGE (V)

1.1 1.2

100

120

140

PERCENT OF RATED PEAK REVERSE VOLTAGE (%)

Document Number: DS_D1309029

Version: J13

MBR3035PT thru MBR30200PT

Taiwan Semiconductor

FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE

PER LEG

FIG. 5 TYPICAL JUNCTION CAPACITANCE

PER LEG

10000

1000

100

f=1.0MHz

Vsig=50mVp-p

MBR3035PT-MBR3045PT

MBR3050PT-MBR3060PT

MBR3090PT-MBR30200PT

0.1

0.01

0.1

100

0.1

100

T-PULSE DURATION(s)

REVERSE VOLTAGE (V)

PACKAGE OUTLINE DIMENSIONS

Unit (mm)

Unit (inch)

DIM.

Min

Max

Min

Max

15.90

7.90

5.70

20.80

3.50

19.70

16.40

8.20

6.20

21.30

4.10

20.20

4.30

3.40

2.18

3.22

1.22

5.70

5.16

3.00

0.76

0.626

0.311

0.224

0.819

0.138

0.776

0.646

0.323

0.244

0.839

0.161

0.795

0.169

0.134

0.086

0.127

0.048

0.224

0.203

0.118

0.030

2.90

1.93

2.97

1.12

5.20

4.90

2.70

0.51

0.114

0.076

0.117

0.044

0.205

0.193

0.106

0.020

MARKING DIAGRAM

P/N

= Marking Code

= Green Compound

= Date Code

YWW

= Factory Code

Document Number: DS_D1309029

Version: J13

MBR3035PT thru MBR30200PT

Taiwan Semiconductor

CREAT BY ART

Notice

Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,

assumes no responsibility or liability for any errors inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied,to

any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of

sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,

relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,

merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or seling these products for use in such applications do so at their own risk and agree to fully

indemnify TSC for any damages resulting from such improper use or sale.

Document Number: DS_D1309029

Version: J13

MBR3060PTHC0 [TSC]

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