MUR160S [TSC]

1.0 AMP. Surface Mount Ultrafast Power Rectifiers; 1.0 AMP 。表面贴装功率超快整流器


型号：	MUR160S
厂家：	TAIWAN SEMICONDUCTOR COMPANY, LTD
描述：	1.0 AMP. Surface Mount Ultrafast Power Rectifiers 1.0 AMP 。表面贴装功率超快整流器二极管瞄准线
文件：	总2页 (文件大小：119K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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MUR105S - MUR160S

1.0 AMP. Surface Mount Ultrafast Power Rectifiers

SMB/DO-214AA

RoHS

COMPLIANCE

Features

For surface mounted application

Easy pick and place

Glass passivated junction chip

Low profile package

Built-in strain relief

Qualified as per AEC-Q101

Hideal for automated placement

Ultrafast recovery time for high efficiency

Low forward voltage, low power loss

High temperature soldering guarateed:

260℃/10 seconds on terminals

Plastic material used carriers Underwritters

Laboratory Classcification 94V-0

Epitaxial construction

Green compound with suffix "G" on packing

code & prefix "G" on datecode

Dimensions in inches and (millimeters)

Marking Diagram

Mechanical Data

Case: SMB/DO-214AA

Molding Compound meet UL 94V-0 flammability rating

MUR1XXS

= Specific Device Code

= Green Compound

= Year

Terminals: Pure tin plated, leads free, solderable

per MIL-STD-750, Method 2026

Polarity: Indicated by cathode band

Weight:0.097 grams

= Work Month

Maximum Ratings and Electrical Characteristics

Rating at 25 ℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

MUR MUR MUR MUR MUR MUR

105S 110S 115S 120S 140S 160S

Symbol

Units

Type Number

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

V_RRM

V_RMS

V_DC

100

150

105

150

200

140

200

400

280

400

600

420

600

Maximum DC Blocking Voltage

100

Maximum Average Forward Rectified Current

I_F(AV)

1.0

Peak Forward Surge Current, 8.3 ms Single Half Sine-wave

Superimposed on Rated Load (JEDEC method )

I_FSM

Maximum Instantaneous Forward Voltage (Note 1) @ 1.0A

@ T_A=25℃

V_F

0.875

0.710

1.25

1.05

@ T_A=150℃

Maximum DC Reverse Current at Rated DC Blocking Voltage

@ T_A=25 ℃

I_R

150

@ T_A=150 ℃

T_rr

Maximum Reverse Recovery Time (Note 2)

Maximum Reverse Recovery Time (Note 3)

Typical Thermal Resistance (Note 4)

Operating Temperature Range

^OC/W

^OC

R_θJL

T_J

-65 to + 175

^OC

Storage Temperature Range

T_STG

Note 1: Pulse Test with PW=300usec, 1% Duty Cycle

Note 2: Reverse Recovery Test Condition:I_F=0.5A, I_R=1.0A, I_RR=0.25A

Note 3: Reverse Recovery Test Condition:I_F=1A, di/dt=50A/us, V_R=30V, I_RR=10% IRM

Note 4: Mount on Cu-Pad Size 10mm x 10mm x 1.6mm on P.C.B.

Version:E11

RATINGS AND CHARACTERISTIC CURVES (MUR105S THRU MUR160S)

FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE

FIG.1 MAXIMUM FORWARD CURRENT DERATING

CURVE

CURRENT

1.5

0.5

100

125

150

175

100

LEAD TEMPERATURE (^oC)

NUMBER OF CYCLES AT 60 Hz

FIG. 4 TYPICAL FORWARD CHARACTERISTICS

MUR140S-160S

FIG. 3 TYPICAL FORWARD CHARACTERISTICS

MUR105S-120S

TA=150℃

TA=25℃

0.1

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

FORWARD VOLTAGE (V)

FIG. 5 TYPICAL REVERSE CHARACTERISTICS

FIG. 6 TYPICAL REVERSE CHARACTERISTICS

1000

100

1000

100

MUR105S-120S

MUR140S-160S

TA=150℃

0.1

TA=25℃

0.01

0.001

0.01

0.001

100

PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)

FIG. 7 TYPICAL JUNCTION CAPACITANCE

MUR105S-120S

MUR140S-160S

REVERSE VOLTAGE (V)

Version:E11

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