SFS1002GH [TSC]

10A, 50V - 600V Super Fast Surface Mount Rectifier;
SFS1002GH
型号: SFS1002GH
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

10A, 50V - 600V Super Fast Surface Mount Rectifier

文件: 总6页 (文件大小:590K)
中文:  中文翻译
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SFS1001GH SFS1008GH  
Taiwan Semiconductor  
10A, 50V - 600V Super Fast Surface Mount Rectifier  
FEATURES  
AEC-Q101 qualified  
Low forward voltage drop  
Ideal for automated placement  
High current capability  
High surge current capability  
Moisture sensitivity level: level 1, per J-STD-020  
RoHS Compliant  
KEY PARAMETERS  
PARAMETER  
IF  
VRRM  
VALUE  
UNIT  
10  
A
V
50 - 600  
125  
IFSM  
A
TJ MAX  
150  
°C  
Package  
Configuration  
TO-263AB (D2PAK)  
Halogen-free according to IEC 61249-2-21  
Dual dies  
APPLICATIONS  
DC to DC converter  
Automotive application  
Car lighting  
Snubber  
Freewheeling application  
MECHANICAL DATA  
Case: TO-263AB (D2PAK)  
Molding compound meets UL 94V-0 flammability rating  
Terminal: Matte tin plated leads, solderable per J-STD-002  
Meet JESD 201 class 2 whisker test  
Polarity: As marked  
TO-263AB (D2PAK)  
Weight: 1.37g (approximately)  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
SFS SFS SFS SFS SFS SFS  
SFS  
SFS  
1001 1002 1003 1004 1005 1006 1007 1008  
PARAMETER  
SYMBOL  
UNIT  
GH  
SFS  
GH  
SFS  
GH  
SFS  
GH  
SFS  
GH  
SFS  
GH  
SFS  
GH  
SFS  
GH  
SFS  
Marking code on the device  
1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G  
Repetitive peak reverse  
voltage  
Reverse voltage, total rms  
value  
VRRM  
50  
35  
100  
70  
150  
105  
200  
140  
300  
210  
400  
280  
500  
350  
600  
420  
V
VR(RMS)  
IF  
V
A
Forward current  
10  
Surge peak forward current,  
8.3ms single half sine wave  
superimposed on rated load  
IFSM  
125  
A
Junction temperature  
Storage temperature  
TJ  
-55 to +150  
-55 to +150  
°C  
°C  
TSTG  
1
Version: A2103  
SFS1001GH SFS1008GH  
Taiwan Semiconductor  
THERMAL PERFORMANCE  
PARAMETER  
SYMBOL  
TYP  
UNIT  
Junction-to-case thermal resistance  
RӨJC  
2
°C/W  
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)  
PARAMETER  
CONDITIONS  
SYMBOL  
TYP  
MAX  
UNIT  
SFS1001GH  
SFS1002GH  
SFS1003GH  
SFS1004GH  
SFS1005GH  
SFS1006GH  
SFS1007GH  
SFS1008GH  
-
0.975  
V
Forward voltage  
per diode(1)  
IF = 5A, TJ = 25°C  
VF  
-
-
1.300  
1.700  
V
V
TJ = 25°C  
-
-
1
µA  
µA  
Reverse current @ rated VR  
per diode(2)  
IR  
TJ = 125°C  
200  
SFS1001GH  
SFS1002GH  
SFS1003GH  
SFS1004GH  
SFS1005GH  
SFS1006GH  
SFS1007GH  
SFS1008GH  
70  
-
pF  
Junction capacitance  
1MHz, VR = 4.0V  
CJ  
50  
-
-
pF  
ns  
IF = 0.5A, IR = 1.0A  
Irr = 0.25A  
Reverse recovery time per diode  
35  
trr  
Notes:  
1. Pulse test with PW = 0.3ms  
2. Pulse test with PW = 30ms  
ORDERING INFORMATION  
ORDERING CODE(1)  
SFS10xGH  
PACKAGE  
PACKING  
TO-263AB (D2PAK)  
800 / Tape & Reel  
Notes:  
1. xdefines voltage from 50V(SFS1001GH) to 600V(SFS1008GH)  
2
Version: A2103  
SFS1001GH SFS1008GH  
Taiwan Semiconductor  
CHARACTERISTICS CURVES  
(TA = 25°C unless otherwise noted)  
Fig.1 Forward Current Derating Curve  
Fig.2 Typical Junction Capacitance  
100  
90  
80  
70  
60  
50  
40  
12  
10  
8
SFS1001GH - SFS1004GH  
SFS1005GH - SFS1008GH  
6
4
2
f=1.0MHz  
Vsig=50mVp-p  
0
25  
50  
75  
100  
125  
150  
1
10  
100  
CASE TEMPERATURE (°C)  
REVERSE VOLTAGE (V)  
Fig.3 Typical Reverse Characteristics  
Fig.4 Typical Forward Characteristics  
100  
10  
1
100  
10  
1
SFS1005GH - SFS1006GH  
TJ=100°C  
TJ=75°C  
SFS1001GH -  
SFS1004GH  
SFS1007GH -  
SFS1008GH  
TJ=25°C  
Pulse width 300μs  
1% duty cycle  
0.1  
0.1  
10 20 30 40 50 60 70 80 90 100  
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8  
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)  
FORWARD VOLTAGE (V)  
Fig.5 Maximum Non-Repetitive Forward Surge Current  
150  
125  
100  
75  
8.3ms single half sine wave  
50  
25  
0
1
10  
100  
NUMBER OF CYCLES AT 60 Hz  
3
Version: A2103  
SFS1001GH SFS1008GH  
Taiwan Semiconductor  
CHARACTERISTICS CURVES  
(TA = 25°C unless otherwise noted)  
Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram  
4
Version: A2103  
SFS1001GH SFS1008GH  
Taiwan Semiconductor  
PACKAGE OUTLINE DIMENSIONS  
TO-263AB (D2PAK)  
SUGGESTED PAD LAYOUT  
MARKING DIAGRAM  
P/N  
G
= Marking Code  
= Green Compound  
= Date Code  
YWW  
F
= Factory Code  
5
Version: A2103  
SFS1001GH SFS1008GH  
Taiwan Semiconductor  
Notice  
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf  
assumes no responsibility or liability for any errors or inaccuracies.  
Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability  
for application assistance or the design of Purchasers’ products.  
Information contained herein is intended to provide a product description only. No license, express or implied, to  
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of  
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,  
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,  
merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify TSC for any damages resulting from such improper use or sale.  
6
Version: A2103  

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