SK32B_1 [TSC]
3.0 AMPS. Surface Mount Schottky Barrier Rectifiers; 3.0安培。表面贴装肖特基整流器
| 型号： | SK32B_1 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 3.0 AMPS. Surface Mount Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：201K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK32B - SK315B
3.0 AMPS. Surface Mount Schottky Barrier Rectifiers
SMB/DO-214AA
.083(2.10)
.077(1.95)
.147(3.73)
.137(3.48)
Features
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For surface mounted application
Metal to silicon rectifier, majority carrier conduction
.187(4.75)
.167(4.25)
.012(.31)
.006(.15)
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
.103(2.61)
.078(1.99)
.012(.31)
.006(.15)
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ꢀ
.056(1.41)
.035(0.90)
.008(.20)
.004(.10)
High temperature soldering:
o
260 C / 10 seconds at terminals
.209(5.30)
.201(5.10)
Mechanical Data
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Case: Molded plastic
Dimensions in inches and (millimeters)
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packaging: 16mm tape per EIA STD RS-481
Weight: 0.1 gram
Maximum Ratings and Electrical Characteristics
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SK
SK
SK
SK
SK
SK
SK
SK
Symbol
Type Number
Units
32B 33B 34B 35B 36B 39B 310B 315B
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
90 100 150
63 70 105
90 100 150
V
V
V
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current at TL(See Fig. 1)
3.0
70
A
A
I(AV)
IFSM
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 3.0A
0.5
0.75
0.85
0.95
V
VF
Maximum DC Reverse Current (Note 1)
mA
mA
o
0.5
0.1
2.0
@ T =25 C at Rated DC Blocking Voltage
A
IR
o
@ T =125 C
A
10
5
Typical Thermal Resistance ( Note 2 )
R
17
75
o
θJL
C/W
R
θJA
o
Operating Temperature Range
Storage Temperature Range
TJ
-55 to +125
-55 to +150
-55 to +150
C
o
TSTG
C
Notes:
1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.4” x 0.4” (10mm x 10mm) Copper Pad Areas.
Version: A06
RATINGS AND CHARACTERISTIC CURVES (SK32B THRU SK315B)
FIG. 1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG. 2- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
3.0
2.0
1.0
150
AT RATED TL
8.3ms Single Half Sine Wave
JEDEC Method
RESISTIVE OR
INDUCTIVELOAD
120
90
60
30
0
PCB MOUNTED ON 0.4X0.4"
(10X10mm)COPPER PAD AREAS
0
50
60
70
80
90
100
110
120 130 140
150
160
1
10
NUMBER OF CYCLES AT 60Hz
100
LEAD TEMP ERATURE.( OC)
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
FIG. 3- TYPICAL FORWARD CHARACTERISTICS
20
10
40
10
Tj=125OC
TJ=125OC
1
Tj=125OC
TJ=75OC
PULSE WIDTH=300 S
1% DUTY CYCLE
1
0.1
Tj=25OC
0.1
0.01
TJ=25OC
SK32B-SK34B
SK35B-SK36B
SK39B-SK315B
SK32B-SK34B
SK35B-SK315B
0.001
100
10
0.01
0
20
40
60
80
100
120
140
1.0
FORWARD VOLTAGE.(V)
1.2
1.4
1.5
0
0.2
0.4
0.6
0.8
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
FIG. 5- TYPICAL JUNCTION CAPACITANCE
1000
Tj=25OC
f=1.0MHz
Vsig=50mVp-p
100
1
10
0.1
0.1
0.01
1
10
100
0.1
1
10
100
REVERSE VOLTAGE.(V)
t, PULSE DURATION, (sec)
Version: A06
相关型号：
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 20V V(RRM), Silicon, DO-214AB, SMCG, 2 PIN
MCC
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