SK52B_1 [TSC]
5.0 AMPS. Surface Mount Schottky Barrier Rectifiers; 5.0安培。表面贴装肖特基整流器
| 型号： | SK52B_1 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 5.0 AMPS. Surface Mount Schottky Barrier Rectifiers |
| 文件： | 总2页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SK52B - SK515B
5.0 AMPS. Surface Mount Schottky Barrier Rectifiers
SMB/DO-214AA
.083(2.10)
.077(1.95)
.147(3.73)
.137(3.48)
Features
.187(4.75)
.167(4.25)
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For surface mounted application
Metal to silicon rectifier, majority carrier conduction
.012(.31)
.006(.15)
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carriers Underwriters
Laboratory Classification 94V-0
Epitaxial construction
.103(2.61)
.078(1.99)
.012(.31)
.006(.15)
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.056(1.41)
.035(0.90)
.008(.20)
.004(.10)
High temperature soldering:
o
260 C / 10 seconds at terminals
.209(5.30)
.201(5.10)
Mechanical Data
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Case: Molded plastic
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packaging: 16mm tape per EIA STD RS-481
Weight: 0.1 gram
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SK SK
SK
SK
SK
SK
SK
SK
Symbol
Type Number
Units
52B 53B 54B 55B 56B 59B 510B 515B
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
20 30
14 21
20 30
40
28
40
50
35
50
60
42
60
90 100 150
63 70 105
90 100 150
V
V
V
VRRM
VRMS
VDC
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at TL(See Fig. 1)
5.0
A
A
V
I(AV)
IFSM
VF
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
120
Maximum Instantaneous Forward Voltage
@ 5.0A
0.55
0.75
0.85
0.1
2.0
0.95
Maximum DC Reverse Current (Note 1)
0.5
mA
mA
o
@ T =25 C at Rated DC Blocking Voltage
A
IR
o
@ T =125 C
A
20
10
Typical Thermal Resistance ( Note 2 )
R
17
75
o
θJL
C/W
R
θJA
o
Operating Temperature Range
Storage Temperature Range
TJ
-55 to +125
-55 to +150
-55 to +150
C
o
TSTG
C
Notes:
1. Pulse Test with PW=300 usec, 1% Duty Cycle
2. Measured on P.C.Board with 0.4” x 0.4” (10mm x 10mm) Copper Pad Areas.
Version: A06
RATINGS AND CHARACTERISTIC CURVES (SK52B THRU SK515B)
FIG. 2- MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
FIG. 1- MAXIMUM FORWARD CURRENT DERATING
CURVE
150
130
110
90
3.0
2.0
1.0
AT RATED TL
8.3ms Single Half Sine Wave
JEDEC Method
RESISTIVE OR
INDUCTIVELOAD
70
PCB MOUNTED ON 0.2X0.2"
(5.0X5.0mm)COPPER PAD AREAS
50
0
1
10
100
50
60
70
80
90
100 110 120 130 140 150 160
LEAD TEMP ERATURE.( OC)
NUMBER OF CYCLES AT 60Hz
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
20
10
FIG. 3- TYPICAL FORWARD CHARACTERISTICS
40
10
Tj=125OC
TJ=125OC
1
Tj=125OC
TJ=75OC
PULSE WIDTH=300 S
1% DUTY CYCLE
1
0.1
Tj=25OC
0.1
0.01
TJ=25OC
SK52B-SK54B
SK55B-SK515B
SK52B-SK54B
SK55B-SK56B
SK59B-SK515B
0.001
0
20
40
60
80
100
120
140
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.5
PERCENT OF RATED PEAK REVERSE VOLTAGE.(%)
FORWARD VOLTAGE.(V)
FIG.6- TYPICAL TRANSIENT THERMAL
CHARACTERISTICS
FIG. 5- TYPICAL JUNCTION CAPACITANCE
1000
100
Tj=25OC
f=1.0MHz
Vsig=50mVp-p
10
100
1
0.1
10
0.1
1
10
100
0.01
0.1
1
10
100
t, PULSE DURATION, (sec)
REVERSE VOLTAGE.(V)
Version: A06
相关型号：
SK52GL
Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 20V V(RRM), Silicon, DO-214AB, SMCG, 2 PIN
MCC
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