SRAF1690 [TSC]

Isolated 16.0 AMPS. Schottky Barrier Rectifiers; 孤立16.0安培。肖特基势垒整流器
SRAF1690
型号: SRAF1690
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

Isolated 16.0 AMPS. Schottky Barrier Rectifiers
孤立16.0安培。肖特基势垒整流器

文件: 总2页 (文件大小:187K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SRAF1620 - SRAF16150  
Isolated 16.0 AMPS. Schottky Barrier Rectifiers  
ITO-220AC  
.185(4.7)  
.173(4.4)  
.406(10.3)  
.390(9.90)  
.124(3.16)  
.118(3.00)  
.134(3.4)DIA  
.113(3.0)DIA  
.112(2.85)  
.100(2.55)  
.272(6.9)  
.248(6.3)  
.606(15.5)  
.583(14.8)  
Features  
Isolated Plastic package.  
.063(1.6)  
MAX  
Low power loss, high efficiency.  
High current capability, Low VF.  
High reliability  
.161(4.1)  
.146(3.7)  
High surge current capability.  
Epitaxial construction.  
.110(2.8)  
.098(2.5)  
.543(13.8)  
.512(13.2)  
.055(1.4)  
.043(1.1)  
.071(1.8)  
MAX  
.030(0.76)  
.020(0.50)  
.035(0.9)  
.020(0.5)  
Guard-ring for transient protection.  
For use in low voltage, high frequency inventor,  
free wheeling, and polarity protection  
application  
2
.100(2.55)  
PIN 1  
PIN 2  
Case Positive  
.100(2.55)  
CASE  
Mechanical Data  
Cases: ITO-220AC molded plastic  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Pure tin plated, lead free. solderable  
per MIL-STD-202, Method 208 guaranteed  
Polarity: As marked  
Dimensions in inches and (millimeters)  
High temperature soldering guaranteed:  
o
260 C/10 seconds.25”,(6.35mm) from  
case.  
Weight: 2.24 grams  
Mounting tarque: 5 in – 1bs. max.  
Maximum Ratings and Electrical Characteristics  
o
Rating at 25 C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
SRAF SRAF SRAF SRAF SRAF SRAF SRAF SRAF  
Symbol  
Units  
Type Number  
1620 1630 1640 1650 1660 1690 16100 16150  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
20  
14  
20  
30  
21  
30  
40  
28  
40  
50  
35  
50  
60  
42  
60  
90 100 150  
63 70 105  
90 100 150  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified  
Current See Fig. 1  
I(AV)  
IFSM  
VF  
16  
A
A
V
Peak Forward Surge Current, 8.3 ms  
Single Half Sine-wave Superimposed on  
Rated Load (JEDEC method )  
275  
Maximum Instantaneous Forward Voltage  
0.55  
0.70  
0.92  
1.02  
@16.0A  
O
Maximum D.C. Reverse Current @ Tc=25  
C
0.5  
0.1  
5.0  
480  
mA  
mA  
IR  
O
at Rated DC Blocking Voltage  
@ Tc=100 C  
15  
10  
580  
4.0  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 1)  
Operating Junction Temperature Range  
Storage Temperature Range  
Cj  
850  
pF  
o
C/W  
R
θJC  
o
T
-65 to +125  
-65 to +150  
-65 to +150  
C
J
o
T
STG  
C
Notes:  
1. Mounted on Heatsink Size of 2” x 3” x 0.25” Al-Plate.  
2. Measured at 1MHz and Applied Reverse Voltage of 4.0V D.C.  
Version: B07  
RATINGS AND CHARACTERISTIC CURVES (SRAF1620 THRU SRAF16150)  
FIG.2- MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
FIG.1- MAXIMUM FORWARD CURRENT DERATING  
CURVE  
20  
16  
12  
8
350  
300  
250  
200  
150  
100  
50  
SRAF1650-150  
SRAF1620-40  
8.3ms Single Half Sine Wave  
JEDEC Method  
4
0
1
2
5
10  
20  
50  
100  
0
50  
100  
150  
CASE TEMPERATURE. (oC)  
NUMBER OF CYCLES AT 60Hz  
FIG.3- TYPICAL FORWARD CHARACTERISTICS  
FIG.4- TYPICAL REVERSE CHARACTERISTICS  
50  
10  
Tj=1000C  
10  
1
Tj=750C  
0.1  
1.0  
Tj=250C  
0.01  
Tj=25oC  
Pulse Width=300  
1% Duty Cycle  
s
0.1  
0.001  
.1  
.2  
.3  
.4  
.5  
.6  
.7  
.8  
.9  
1.0  
0
20  
40  
60  
80  
100  
120  
140  
FORWARD VOLTAGE. (V)  
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)  
FIG.6- TYPICAL TRANSIENT THERMAL  
CHARACTERISTICS  
FIG.5- TYPICAL JUNCTION CAPACITANCE  
4000  
2000  
100  
10.0  
1000  
800  
600  
400  
1
200  
0.1  
100  
.1  
.4  
1.0  
4
REVERSE VOLTAGE. (V)  
10  
40  
80100  
0.01  
0.1  
1
10  
100  
PULSE DURATION. (sec)  
Version: B07  

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