SS12E [TSC]
1.0 AMPS. Surface Mount Schottky Rectifiers; 1.0安培。表面贴装肖特基整流器
| 型号： | SS12E |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 1.0 AMPS. Surface Mount Schottky Rectifiers |
| 文件： | 总3页 (文件大小：518K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS12E - SS115E
1.0 AMPS. Surface Mount Schottky Rectifiers
SMAE
RoHS
Pb
COMPLIANCE
Features
ꢀFor surface mounted application
ꢀEsay pick and place
ꢀLow forward voltage drop
ꢀHigh current capability
ꢀHigh surge current capability
ꢀHigh temperature soldering guaranteed:
260oC / 10 seconds at terminals
ꢀPlastic material used carriers Underwriters
Laboratory Classification 94V-0
ꢀGreen compound with suffix “G” on packing code &
prefix “G” on datecode.
Mechanical Data
ꢀ
ꢀ
ꢀ
ꢀ
Cases: SMAE Molded plastic
Terminals: Lead free Finish
Polarity: Indicated by cathode band.
Weight: 0.072 grams
Maximum Ratings and Electrical Characteristics
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
SS
SS
SS
SS
SS
SS
SS
SS
Type Number
Symbol
Units
12E 13E 14E 15E 16E 19E 110E 115E
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
VRRM
VRMS
VDC
20
14
20
30
21
30
40
28
40
50
35
50
60
42
60
90 100 150
63 70 105
V
V
V
Maximum DC Blocking Voltage
90 100 150
Maximum Average Forward Rectified Current
@TL(See Fig. 1)
I(AV)
IFSM
1.0
30
A
A
Peak Forward Surge Current, 8.3 ms Single Half Sine-
wave Superimposed on Rated Load (JEDEC method )
Maximum Instantaneous Forward Voltage (Note 1)
IF= 1.0A @Ta=25oC
VF
0.60
0.70
0.85
30
V
Maximum DC Reverse Current @ Ta=25oC
@ Ta=100oC
0.5
20
IR
mA
pF
Typical Junction Capacitance(Note 3)
110
Cj
RθJA
RθJL
84
28
OC/W
Typical Thermal Resistance (Note 2)
OC
OC
TJ
Operating Temperature Range
-55 to +125
-55 to +150
TSTG
Storage Temperature Range
Notes: 1. Pulse Test with PW=300u sec, 1% Duty Cycle.
2. Mount on Cu-Pad Size 5mm x 5mm on P.C.B.
3. Measured at f=1.0MHz, VR= 4.0V D.C.
Version : A09
RATINGS AND CHARACTERISTIC CURVES (SS12E - SS115E)
FIG.1 Maximum Forward Current Derating Curve
FIG 2 Maximum Forward Surge Current
80
70
60
50
40
30
20
10
0
1
0.8
0.6
0.4
0.2
0
25
50
75
100
125
150
1
10
100
Lead Temperature (oC)
Number of Cycles at 60 Hz
FIG 3 TYPICAL FORWARD CHARACTERISTICS
FIG 4 TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
100000
10000
1000
100
10
SS15E-SS16E
Ta=125oC
SS12E-SS14E
1
0.1
Ta= 25oC
SS19E-SS115E
10
1
0.01
0
20
40
60
80
100
120
140
0
0.2
0.4
0.6
0.8
1
1.2
Percentage of VR (%)
Forward Voltage (V)
FIG 5 Typical Junction Capacitance
SS12E-SS16E
1000
100
10
SS19E-SS115E
0.1
1
10
100
Reverse Voltage (V)
Version : A09
臺 灣 半 導 體 股 份 有 限 公 司
Taiwan Semiconductor Co. LTD
DATA Sheet History 變 更 記 錄 表
Part No : SS12E – SS115E
日 期 版 本
Date
Jul. 24/09
變 更 內 容
Revised description
Initial Issue
變 更 原因
Revised Reason
Version
A
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