SS13M [TSC]
1.0Amp Surface Mount Schottky Barrier Rectifier; 1.0AMP表面贴装肖特基整流器
| 型号： | SS13M |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 1.0Amp Surface Mount Schottky Barrier Rectifier |
| 文件： | 总3页 (文件大小：171K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS13M/SS14M/SS16M
1.0Amp Surface Mount Schottky Barrier Rectifier
Micro SMA
RoHS
Pb
COMPLIANCE
Features
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Very low profile - typical height of 0.68mm
Ideal for automated placement
Low forward voltage drop. Low power loss.
High efficiency
0.059(1.50)
0.106(2.70)
0.091(2.30)
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Meet MSL level 1, per J-STD-020D,
0.053(1.35)
0.045(1.15)
0.091(2.30)
0.083(2.10)
lead free maximum peak of 260℃
0.008(0.20)
0.004(0.10)
0.029(0.73)
0.025(0.63)
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Solder dip 265℃ max. 10 s, per JESD 22-A111
Compliant to RoHS directive 2002/95/EC
and in accordance to WEEE 2002/96/EC
Halogen-free according to IEC 61249-2-21
definition
0.034(0.85)
0.026(0.65)
ꢀ
0.059(1.50)
0.043(1.10)
0.030(0.75)
0.022(0.55)
0.020
(0.50) (0.80)
0.079
(2.00)
0.032
Typical Application
0.053(1.35) 0.037(0.95)
0.045(1.15) 0.030(0.75)
0.034(0.85) 0.043
0.039
(1.00)
0.026(0.65)
(1.10)
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For use in low voltage high frequency inverter,
freewheeling, DC to DC converter, and polarity
protection applications.
0.030(0.75)
0.022(0.55)
Suggested Mounting Pad Layout
Mechanical Data
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Case: Micro SMA
Dimensions in inches and (millimeters)
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Molding Compound meet UL 94V-0 flammability
rating.
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Terminals: Matte tin plated leads, solderable
per J-STD-002B, and JESD22-B102D.
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Polarity: Indicated by Cathode Band
Packaging: 8 mm tape per EIA Std RS-481
Weight: 0.006 gram
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Parameter
SS13M SS14M
SS16M
Symbol
Unit
Device Marking Code
A
B
C
Maximum Repetitive Peak Reverse Voltage
Maximum Average Forward Rectified Current (Fig.1)
VRRM
I(AV)
30
40
60
V
A
1
Peak Forward Surge Current, 8.3 ms Single Half Sine-wave
Superimposed on Rated Load
IFSM
25
A
Maximum Instantaneous Forward Voltage
@ 0.5A / Ta=25℃
TYP.
0.45
0.35
0.52
0.46
MAX.
-
-
0.55
0.50
TYP.
MAX.
-
-
0.68
0.60
0.51
0.46
0.64
0.57
@ 0.5A / Ta=125℃
@ 1.0A / Ta=25℃
@ 1.0A / Ta=125℃
VF
V
Maximum Reverse Current @ Rated VR
TYP.
MAX.
50
10
TYP.
MAX.
50
10
Ta=25 ℃
Ta=125 ℃
Ta=150 ℃
1
2
6
2
2
7
uA
mA
mA
IR
-
-
Typical Junction Capacitance ( Note 1)
50
40
Cj
pF
RθJA
RθJL
RθJC
125
30
40
OC/W
Typical Thermal Resistance (Note 2)
OC
OC
TJ
Operating Temperature Range
Storage Temperature Range
-55 to + 150
-55 to + 150
TSTG
Note1: Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
Note2: Mount on Cu-Pad Size 6mm × 6mm x 1.6mm on P.C.B.
Version:E10
RATINGS AND CHARACTERISTIC CURVES (SS13M/SS14M/SS16M)
Fig. 2 Maximum Forward Surge Current
Fig.1 Maximum Forward Current Derating Curve
Resistive or Inductive Load
1.2
1
40
30
20
10
0
8.3ms Single Half
Sine-Wave
0.8
0.6
0.4
TL Measured
0.2 at the Cathode Band Terminal
0
1
10
100
0
25
50
75
100
125
150
Lead Temperature (oC)
Number of Cycles at 60 Hz
Fig. 4 Typical Forward Characteristics - SS16M
Fig. 3 Typical Forward Characteristics - SS13M/14M
100
10
100
10
Ta=150℃
Ta=150℃
1
1
Ta=125℃
Ta=125℃
0.1
0.01
0.1
0.01
Ta=25℃
Ta=25℃
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
Forward Voltage (V)
Forward Voltage (V)
Fig. 5 Typical Reverse Characteristics - SS13M/14M
Fig. 6 Typical Reverse Characteristics - SS16M
100
100
10
10
1
Ta=150℃
Ta=150℃
1
Ta=125℃
Ta=125℃
0.1
0.1
0.01
0.001
0.0001
0.01
0.001
0.0001
Ta=25℃
Ta=25℃
10
20
30
40
50
60
70
80
90
100
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage.(%)
Percent of Rated Peak Reverse Voltage.(%)
Version:E10
RATINGS AND CHARACTERISTIC CURVES (SS13M/SS14M/SS16M)
Fig. 7 Typical Junction Capacitance
Fig. 8 Typical Transient Thermal Impedance
Junction to Ambient
1000
100
10
1000
100
10
SS16M
SS16M
SS13M/SS14M
SS13M/SS14M
1
1
0.1
1
10
100
0.01
0.1
1
10
100
Reverse Voltage (V)
t-Pulse Duration(s)
Version:E10
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