SSH210HR5 [TSC]

Surface Mount Schottky Barrier Rectifier;
SSH210HR5
型号: SSH210HR5
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

Surface Mount Schottky Barrier Rectifier

功效 瞄准线 光电二极管
文件: 总4页 (文件大小:203K)
下载:  下载PDF数据表文档文件

SSH22N35

TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 22A I(D) | TO-247VAR

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22 ETC

SSH22N35

Power Field-Effect Transistor, 22A I(D), 350V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

SSH22N40

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 22A I(D) | TO-247VAR

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22 ETC

SSH22N50

Advanced Power MOSFET

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60 FAIRCHILD

SSH22N50

Advanced Power MOSFET

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26 FAIRCHILD

SSH22N50A

Advanced Power MOSFET

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191 FAIRCHILD

SSH24D35

Output to 75A, 510 Vac with Diagnostics

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0 TELEDYNE

SSH24D50

Output to 75A, 510 Vac with Diagnostics

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0 TELEDYNE

SSH25N35

TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 25A I(D) | TO-247VAR

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32 ETC

SSH25N35

Power Field-Effect Transistor, 25A I(D), 350V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

SSH25N35A

Power Field-Effect Transistor, 25A I(D), 350V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

SSH25N35A

Power Field-Effect Transistor, 25A I(D), 350V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

SSH25N40

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 25A I(D) | TO-247VAR

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20 ETC

SSH25N40

Power Field-Effect Transistor, 25A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

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0 SAMSUNG

SSH25N40A

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 25A I(D) | TO-247VAR

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30 ETC