TESDD5V0HC [TSC]

Bi-directional ESD Protection Diode; 双向ESD保护二极管
TESDD5V0HC
型号: TESDD5V0HC
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

Bi-directional ESD Protection Diode
双向ESD保护二极管

二极管
文件: 总3页 (文件大小:231K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TESDD5V0HC  
Bi-directional ESD Protection Diode  
Small Signal Diode  
SOD-523F  
Features  
—Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact)  
—Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs)  
—Protects one birectional I/O line  
—Working Voltage : 5V  
—Pb free version, RoHS compliant, and Halogen free  
Unit (mm)  
Unit (inch)  
Min Max  
Mechanical Data  
—Case : SOD-523F flat lead small outline plastic package  
Dimensions  
Min  
0.70  
1.50  
0.25  
1.10  
0.60  
0.10  
Max  
A
B
C
D
E
F
0.90 0.028 0.035  
1.70 0.059 0.067  
0.35 0.010 0.014  
1.30 0.043 0.051  
0.70 0.024 0.028  
0.14 0.004 0.006  
—Terminal: Matte tin plated, lead free., solderable  
per MIL-STD-202, Method 208 guaranteed  
—High temperature soldering guaranteed: 260°C/10s  
—Mounting position: Any  
—Weight :2 mg (approximately)  
—Marking Code : TB  
Applications  
—Cell Phone Handsets and Accessories  
Pin Configutation  
—Microprocessor based equipment  
—Personal Digital Assistants (PDA’s)  
—Portable Instrumentation  
—Peripherals  
Suggested PAD Layout  
0.40  
Ordering Information  
0.40  
Packing Code  
Part No.  
Package  
Packing  
Marking  
1.00  
1.80  
RKG  
TESDD5V0HC SOD-523F 3K / 7" Reel  
TB  
Unit : mm  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Maximum Ratings  
Type Number  
Symbol  
Value  
Units  
Peak Pulse Power (tp=8/20μs waveform)  
PPP  
100  
W
ESD per IEC 61000-4-2 (Air)  
ESD per IEC 61000-4-2 (Contact)  
±15  
±8  
VESD  
KV  
Junction and Storage Temperature Range  
TJ, TSTG  
.
-55 to + 150  
.
°C  
Electrical Characteristics  
Type Number  
Symbol  
VRWM  
V(BR)  
Min  
Max  
5
Units  
V
Reverse Stand-Off Voltage  
Reverse Breakdown Voltag  
Reverse Leakage Current  
-
6
-
IR=  
-
V
1mA  
5V  
VR=  
IR  
1
uA  
IPP  
=
=
-
10  
15  
1A  
Clamping Voltage  
Vc  
V
IPP  
-
5A  
Junction Capacitance  
VR=0V, f=1.0MHz  
CJ  
35 (Typ.)  
pF  
Notes: 1. The suggested land pattern dimensions have been provided for reference only, as actual pad layouts  
may vary despending on application.  
Version : A11  
TESDD5V0HC  
Bi-directional ESD Protection Diode  
Small Signal Diode  
Rating and Characteristic Curves  
FIG 1 Non-Repetitive Peak Pulse Power vs. Pulse Time  
FIG 2 Pulse Waveform  
10  
110  
Waveform Parameters:  
tr = 8μs, td = 20μs  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
1
e-1  
td=Ipp/2  
0.1  
0.01  
0.1  
1
10  
100  
1000  
0
5
10  
15  
20  
25  
30  
Pulse Duration (us)  
Time (us)  
FIG 3 Admissible Power Dissipation Curve  
FIG 4 Typical Junction Capacitance  
120  
40  
35  
30  
25  
20  
15  
10  
5
100  
80  
60  
40  
20  
0
f = 1.0MHz  
4
0
0
1
2
3
5
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
Ambient Tempeatature (oC)  
Reverse Voltage (V)  
FIG 5 Clamping Voltage vs. Peak Pulse Current)  
25  
20  
15  
10  
5
Waveform Parameters:  
tr = 8μs, td = 20μs  
0
0
1
2
3
4
5
Peak Pulse Current (A)  
Version : A11  
TESDD5V0HC  
Bi-directional ESD Protection Diode  
Small Signal Diode  
Applications Information  
—Designed to protect one data, I/O, or power supply line.  
—Designed to protect sensitive electronics from damage or latch-up due to ESD  
—Designed to replace multilayer varistors (MLVs) in portable applications  
—Offers superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs  
—The combination of small size and high ESD surge capability makes them ideal for use in portable applications.  
Circuit Board Layout Recommendations  
Good circuit board layout is critical for the suppression of ESD induced transients.  
—Place the ESD Protection Diode near the input terminals or connectors to restrict transient coupling.  
—Minimize the path length between the ESD Protection Diode and the protected line.  
—Minimize all conductive loops including power and ground loops.  
—The ESD transient return path to ground should be kept as short as possible.  
Tape & Reel specification  
TSC label  
Dimension  
(mm)  
Item  
Symbol  
Top Cover Tape  
Carrier depth  
K
D
2.40 Max.  
1.50 +0.10  
178 ± 1  
Sprocket hole  
Reel outside diameter  
Reel inner diameter  
Feed hole width  
Sprocke hole position  
Punch hole position  
Sprocke hole pitch  
Embossment center  
Overall tape thickness  
Tape width  
A
Carieer Tape  
D1  
D2  
E
50 Min.  
13.0 ± 0.5  
1.75 ±0.10  
3.50 ±0.05  
4.00 ±0.10  
2.00 ±0.10  
0.6 Max.  
Any Additional Label (If Required)  
10 Pitches Cumulative  
Tolerance on Tape  
±2.0mm ( ±0.008")  
P0  
P1  
F
D
T
P0  
P1  
T
E
F
K0  
W
W
W1  
8.30 Max.  
14.4 Max.  
B0  
B1  
D'  
Top  
Cover Tape  
See Note1  
Reel width  
For Components  
2.0mm X 1.2mm  
and Larger  
Center Lines  
of Cavity  
K
A0  
Embossment  
For Machine Reference  
Only  
Including Draft and RADLL  
Concentric Around B0  
W1  
D1  
A
D2  
Direction of Feed  
Note 1: A , B , and K are determined by component size. The clearance between the components and the cavity must be  
0
0
0
within 0.05 mm min. to 0.5 mm max. The component cannot rote more than 10o within the determined cavity.  
Note 2: If B1 exceeds 4.2 mm(0.165'') for 8 mm embossed tape, the tape may not feed through all tape feeders.  
Version : A11  

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