TS13003B [TSC]
High Voltage NPN Transistor; 高压NPN晶体管
| 型号： | TS13003B |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | High Voltage NPN Transistor |
| 文件： | 总3页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TS13003B
High Voltage NPN Transistor
BVCEO = 400V
BVCBO = 700V
Ic = 1.5A
Pin assignment:
1. Emitter
2. Collector
3. Base
VCE (SAT), = 0.8V @ Ic / Ib = 0.5A / 0.1A
Features
Ordering Information
ꢀ
High voltage.
Part No.
Packing
Bulk Pack
Ammo Pack
Package
TO-92
TO-92
ꢀ
High speed switching
TS13003BCT B0
TS13003BCT A3
Structure
ꢀ
Silicon triple diffused type.
ꢀ
NPN silicon transistor
Absolute Maximum Rating (Ta = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
700V
V
V
V
A
400V
9
DC
1.5
3
Pulse
Collector Power Dissipation
PD
TJ
0.6
W
oC
oC
Operating Junction Temperature
+150
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw = 300uS, Duty <= 2%
TSTG
- 55 to +150
Electrical Characteristics (Ta = 25 oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC = 10mA, IB = 0
IC = 10mA, IE = 0
IE = 1mA, IC = 0
BVCBO
BVCEO
BVEBO
ICBO
700
400
9
--
--
--
--
--
--
--
--
--
--
--
--
V
V
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
--
V
VCB = 700V, IE = 0
VEB = 9V, IC = 0
--
10
10
3
uA
uA
V
Emitter Cutoff Current
IEBO
--
Collector-Emitter Saturation Voltage
IC / IB = 1.5A / 0.5A
IC / IB = 0.5A / 0.1A
VCE = 2V, IC = 0.43A
VCE(SAT)1
VCE(SAT)2
--
--
0.8
40
40
40
DC Current Gain
23
8
V
CE = 2V, IC = 1.0A
CE = 5V, IC = 10uA
hFE
V
6
Frequency
VCE = 10V, IC = 0.1A
VCB = 10V, f = 0.1MHz
VCC = 125V, IC = 1A,
fT
Cob
tON
tSTG
tf
4
MHz
pF
Output Capacitance
Turn On Time
Storage Time
Fall Time
21
1.1
uS
I
B1 = 0.2A, IB2 = - 0.2A,
4
uS
RL = 125ohm
0.7
uS
Note : pulse test: pulse width <=300uS, duty cycle <=2%
TS13003B
1-3
2005/01 rev. A
Electrical Characteristics Curve
Figure 1. Static Characteric
Figure 2. DC Current Gain
Figure 3. Vce(sat) v.s. Vbe(sat)
Figure 4. Switching Time
Figure 5. Safe Operating Area
Figure 6. Power Derating
TS13003B
2-3
2005/01 rev. A
TO-92 Mechanical Drawing
A
TO-92 DIMENSION
MILLIMETERS
INCHES
MIN MAX
DIM
MIN
4.30
4.30
MAX
4.70
4.70
B
A
B
C
D
E
F
0.169
0.169
0.185
0.185
14.30(typ)
0.563(typ)
0.43
2.19
3.30
2.42
0.37
0.49
2.81
3.70
2.66
0.43
0.017
0.086
0.130
0.095
0.015
0.019
0.111
0.146
0.105
0.017
G
H
E
F
C
H
G
D
TS13003B
3-3
2005/01 rev. A
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