TSD1760CPRO [TSC]
Low Vcesat NPN Transistor; 低VCESAT NPN晶体管
| 型号： | TSD1760CPRO |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | Low Vcesat NPN Transistor |
| 文件： | 总4页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSD1760
Low Vcesat NPN Transistor
TO-252
(DPAK)
Pin Definition:
1. Base
2. Collector
3. Emitter
PRODUCT SUMMARY
BVCBO
BVCEO
IC
50V
50V
3A
VCE(SAT)
0.5V @ IC / IB = 2A / 200mA
Features
Ordering Information
●
Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.)
Complementary part with TSB1184CP
Part No.
Package
TO-252
Packing
●
TSD1760CP RO
2.5Kpcs / 13” Reel
Structure
●
Epitaxial Planar Type
NPN Silicon Transistor
●
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
50
50
V
5
3
V
DC
Collector Current
IC
A
Pulse
7 (note 1)
1 (note 2)
15
Ta=25ºC
Tc=25ºC
Power Dissipation
PD
W
Operating Junction Temperature
TJ
+150
oC
oC
Operating Junction and Storage Temperature Range
TSTG
- 55 to +150
Note: 1. Single pulse, Pw=10mS, Duty≤2%
2. PCB 1.7mm thick, collector copper plating 10mm x 10mm or larger.
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
IC = 50uA, IE = 0
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min
Typ
--
Max
--
Unit
Collector-Base Breakdown Voltage
50
50
5
V
V
Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0
--
--
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IE = 50uA, IC = 0
VCB = 30V, IE = 0
VEB = 4V, IC = 0
--
--
V
--
--
1
uA
uA
V
Emitter Cutoff Current
IEBO
--
--
1
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
IC / IB = 2A / 200mA
VCE = 2V, IC = 100mA
VCE =5V, IC=50mA,
f=100MHz
*VCE(SAT)
*hFE
--
0.25
--
0.5
560
82
Transition Frequency
Output Capacitance
fT
--
--
90
45
--
--
MHz
pF
VCB = 10V, f=1MHz
Cob
* Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%
1/4
Version: A09
TSD1760
Low Vcesat NPN Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. DC Current Gain
Figure 2. VCE(SAT) v.s. Ic
Figure 3. VBE(SAT) v.s. Ic
Figure 4. Power Derating Curve
2/4
Version: A09
TSD1760
Low Vcesat NPN Transistor
TO-252 Mechanical Drawing
TO-252 DIMENSION
MILLIMETERS
MIN MAX
2.3BSC
4.6BSC
6.80
INCHES
MIN MAX
DIM
A
A1
B
0.09BSC
0.18BSC
7.20
5.60
6.65
2.40
0.20
5.40
0.85
0.65
0.65
1.50
2.80
1.10
1.50
1.70
0.268
0.283
0.220
0.262
0.094
0.008
0.213
0.033
0.026
0.026
0.059
0.110
0.043
0.059
0.67
C
D
E
5.40
6.40
2.20
0.00
5.20
0.75
0.55
0.35
0.90
2.20
0.50
0.90
1.30
0.213
0.252
0.087
0.000
0.205
0.030
0.022
0.014
0.035
0.087
0.020
0.035
0.051
F
G
G1
G2
H
I
J
K
L
M
3/4
Version: A09
TSD1760
Low Vcesat NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
4/4
Version: A09
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