TSD1857 [TSC]
Low Vcesat NPN Transistor; 低VCESAT NPN晶体管
| 型号： | TSD1857 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | Low Vcesat NPN Transistor |
| 文件： | 总5页 (文件大小：257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSD1857
Low Vcesat NPN Transistor
TO-126
TO-92
Pin Definition:
1. Emitter
PRODUCT SUMMARY
2. Collector
3. Base
BVCBO
BVCEO
IC
180V
180V
1.5A
VCE(SAT)
0.6V @ IC / IB = 1A / 100mA
Features
Ordering Information
●
Low VCE(SAT) 0.6 @ IC / IB = 1A / 100mA (Typ.)
High BVCEO
Part No.
Package
Packing
1K / Bulk
●
TSD1857CT B0
TSD1857CT A3
TSD1857CK B0
TO-92
TO-92
TO-126
2K / Ammo
500pcs / Bulk
Structure
●
Epitaxial Planar Type
NPN Silicon Transistor
●
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VCBO
VCEO
VEBO
180
V
V
V
180
5
1.5
DC
Collector Current
IC
A
Pulse
TO-92
TO-126
3 (note1)
0.75
Collector Power Dissipation
PD
W
1
Operating Junction Temperature
TJ
+150
oC
oC
Operating Junction and Storage Temperature Range
Note: 1. Single pulse, Pw=10ms, Duty≤50%
TSTG
- 55 to +150
2. When mounted on a 40 x 50 x 0.7mm ceramic board.
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Collector-Base Breakdown Voltage
Conditions
IC = 50uA, IE = 0
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min
180
180
5
Typ
--
Max
--
Unit
V
Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0
--
--
V
Emitter-Base Breakdown Voltage
Collector Cutoff Current
IE = 50uA, IC = 0
--
--
V
VCB = 160V, IE = 0
VEB = 4V, IC = 0
--
--
1
uA
uA
V
Emitter Cutoff Current
IEBO
--
--
1
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
IC / IB = 1A / 100mA
VCE = 5V, IC = 5mA
VCE = 5V, IC = 200mA
VCE = 5V, IC = 500mA
VCE =5V, IE=150A,
f=100MHz
VCE(SAT)
VBE(ON)
--
--
0.6
0.8
320
--
0.45
160
30
--
V
hFE
hFE
1
2
--
DC Current Transfer Ratio
--
Transition Frequency
Output Capacitance
fT
--
--
140
27
--
--
MHz
pF
VCB = 10V, f=1MHz
Cob
Note: Pulse test: pulse width ≤380uS, Duty cycle≤2%
1/5
Version: B11
TSD1857
Low Vcesat NPN Transistor
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Figure 1. DC Current Gain
Figure 2. VCE(SAT) vs. Collector Current
Figure 3. VBE(SAT) vs. Collector Current
Figure 4. Power Derating Curve (TO-92)
Figure 5. On Voltage vs. Collector Current
Figure 6. Power Derating Curve (TO-126)
2/5
Version: B11
TSD1857
Low Vcesat NPN Transistor
TO-126 Mechanical Drawing
TO-126 DIMENSION
INCHES MILLIMETERS
MIN
DIM
MAX
0.134
0.087
0.034
0.054
0.024
0.323
0.441
MIN
3.00
1.80
0.66
1.17
0.45
7.80
10.80
MAX
3.40
2.20
0.86
1.37
0.60
8.20
11.2
A
A1
b
0.118
0.071
0.026
0.046
0.018
0.307
0.425
B1
c
D
E
e
0.090 BSC
2.28 BSC
e1
L
0.176
0.594
0.051
0.159
0.118
0.122
0.183
0.610
0.059
0.167
0.126
0.130
4.46
15.10
1.30
4.04
3.00
3.10
4.66
15.50
1.50
4.24
3.20
3.30
L1
P
Ø1
Ø2
3/5
Version: B11
TSD1857
Low Vcesat NPN Transistor
TO-92 Mechanical Drawing
TO-92 DIMENSION
MILLIMETERS INCHES
DIM
MIN
4.30
4.30
MAX
4.70
4.70
MIN
0.169
0.169
MAX
0.185
0.185
A
B
C
D
E
F
13.53 (typ)
0.532 (typ)
0.39
1.18
3.30
1.27
0.33
0.49
1.28
3.70
1.31
0.43
0.015
0.046
0.130
0.050
0.013
0.019
0.050
0.146
0.051
0.017
G
H
4/5
Version: B11
TSD1857
Low Vcesat NPN Transistor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5/5
Version: B11
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