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TSD882S_07 [TSC]

Low Vcesat NPN Transistor; 低VCESAT NPN晶体管
TSD882S_07
型号： TSD882S_07
厂家： TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述：

Low Vcesat NPN Transistor
低VCESAT NPN晶体管

晶体 晶体管
文件： 总5页 (文件大小：248K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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TSD882S  
Low Vcesat NPN Transistor  
TO-92  
SOT-89  
Pin Definition:  
1. Base  
2. Collector  
3. Emitter  
Pin Definition:  
1. Emitter  
2. Collector  
3. Base  
PRODUCT SUMMARY  
BVCBO  
BVCEO  
IC  
60V  
50V  
3A  
VCE(SAT)  
0.5V @ IC / IB = 2A / 200mA  
Features  
Ordering Information  
●
Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.)  
Complementary part with TSB772S  
Part No.  
Package  
Packing  
●
TSD882SCT B0  
TSD882SCT A3  
TSD882SCY RM  
TO-92  
TO-92  
1Kpcs / Bulk  
Structure  
2Kpcs / Ammo  
1Kpcs / 7” Reel  
●
Epitaxial Planar Type  
NPN Silicon Transistor  
SOT-89  
●
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCBO  
VCEO  
VEBO  
60  
50  
V
5
V
DC  
3
Collector Current  
IC  
A
Pulse  
SOT-89  
TO-92  
7 (note)  
0.75  
Collector Power Dissipation  
PD  
W
0.625  
+150  
- 55 to +150  
Operating Junction Temperature  
TJ  
oC  
oC  
Operating Junction and Storage Temperature Range  
TSTG  
Note: Single pulse, Pw≤350us, Duty≤2%  
Electrical Specifications (Ta = 25oC unless otherwise noted)  
Parameter  
Conditions  
IC = 50uA, IE = 0  
Symbol  
BVCBO  
BVCEO  
BVEBO  
ICBO  
Min  
Typ  
--  
Max  
--  
Unit  
Collector-Base Breakdown Voltage  
60  
50  
5
V
V
Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0  
--  
--  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
IE = 50uA, IC = 0  
VCB = 50V, IE = 0  
VEB = 3V, IC = 0  
--  
--  
V
--  
--  
1
uA  
uA  
V
Emitter Cutoff Current  
IEBO  
--  
--  
1
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
DC Current Transfer Ratio  
IC / IB = 2A / 200mA  
IC / IB = 2A / 200mA  
VCE = 2V, IC = 1A  
VCE =6V, IC=50mA,  
f=100MHz  
*VCE(SAT)  
*VBE(SAT)  
*hFE  
--  
0.25  
--  
0.5  
2
--  
V
100  
--  
500  
Transition Frequency  
fT  
--  
--  
90  
45  
--  
--  
MHz  
pF  
Output Capacitance  
VCB = 10V, f=1MHz  
Cob  
* Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2%  
1/5  
Version: A07  
TSD882S  
Low Vcesat NPN Transistor  
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)  
Figure 1. DC Current Gain  
Figure 2. VCE(SAT) v.s. Ic  
Figure 3. VBE(SAT) v.s. Ic  
Figure 4. Power Derating Curve  
2/5  
Version: A07  
TSD882S  
Low Vcesat NPN Transistor  
TO-92 Mechanical Drawing  
TO-92 DIMENSION  
MILLIMETERS INCHES  
DIM  
MIN  
4.30  
4.30  
MAX  
4.70  
4.70  
MIN  
MAX  
0.185  
0.185  
A
B
C
D
E
F
0.169  
0.169  
14.30(typ)  
0.563(typ)  
0.43  
2.19  
3.30  
2.42  
0.37  
0.49  
2.81  
3.70  
2.66  
0.43  
0.017  
0.086  
0.130  
0.095  
0.015  
0.019  
0.111  
0.146  
0.105  
0.017  
G
H
3/5  
Version: A07  
TSD882S  
Low Vcesat NPN Transistor  
SOT-89 Mechanical Drawing  
SOT-89 DIMENSION  
MILLIMETERS INCHES  
MIN  
DIM  
MIN  
4.40  
1.50  
2.30  
0.40  
1.50  
3.00  
0.89  
4.05  
1.4  
MAX  
4.60  
1.7  
MAX  
0.181  
0.070  
0.102  
0.020  
0.059  
0.118  
0.047  
0.167  
0.068  
0.017  
A
B
C
D
E
F
G
H
I
0.173  
0.059  
0.090  
0.016  
0.059  
0.118  
0.035  
0.159  
0.055  
0.014  
2.60  
0.52  
1.50  
3.00  
1.20  
4.25  
1.6  
J
0.35  
0.44  
4/5  
Version: A07  
TSD882S  
Low Vcesat NPN Transistor  
Notice  
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,  
assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, to any  
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for  
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale  
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,  
or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers  
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for  
any damages resulting from such improper use or sale.  
5/5  
Version: A07  

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