TSM042N03CS [TSC]

30V N-Channel Power MOSFET;
TSM042N03CS
型号: TSM042N03CS
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

30V N-Channel Power MOSFET

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中文:  中文翻译
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TSM042N03CS  
30V N-Channel Power MOSFET  
SOP-8  
Pin Definition:  
Key Parameter Performance  
1. Source  
2. Source  
3. Source  
4. Gate  
8. Drain  
Parameter  
Value  
30  
Unit  
7. Drain  
6. Drain  
5. Drain  
VDS  
V
VGS = 10V  
VGS = 4.5V  
4.2  
6
RDS(on) (max)  
Qg  
mΩ  
24  
nC  
Block Diagram  
Ordering Information  
Part No.  
Package  
Packing  
2.5kps / 13’’ Reel  
TSM042N03CS RLG  
SOP-8  
Note: “G” denotes for Halogen- and Antimony-free as those which contain  
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds  
N-Channel MOSFET  
Absolute Maximum Ratings (Tc=25oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
30  
±20  
V
Tc=25ºC  
30  
A
Continuous Drain Current  
ID  
Tc=100ºC  
19  
A
Pulsed Drain Current (Note 1)  
IDM  
EAS  
IAS  
120  
A
Single Pulse Avalanche Energy (Note 2)  
Single Pulse Avalanche Current (Note 2)  
Power Dissipation @ TC = 25oC  
Operating Junction Temperature  
Storage Temperature Range  
125  
mJ  
A
50  
PD  
7
W
ºC  
oC  
TJ  
175  
TSTG  
-55 to +175  
Thermal Performance  
Parameter  
Symbol  
Limit  
Unit  
Thermal Resistance - Junction to Ambient  
RӨJA  
62  
oC/W  
1/5  
Version: A14  
TSM042N03CS  
30V N-Channel Power MOSFET  
Electrical Specifications (TJ=25oC unless otherwise noted)  
Parameter  
Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
VGS = 0V, ID = 250µA  
VGS = 10V, ID = 12A  
VGS = 4.5V, ID = 6A  
VDS = VGS, ID = 250µA  
BVDSS  
RDS(ON)  
VGS(TH)  
IDSS  
30  
--  
--  
3.8  
5.2  
1.6  
--  
--  
4.2  
6
V
mΩ  
V
Drain-Source On-State Resistance  
Gate Threshold Voltage  
1.2  
--  
2.5  
1
VDS = 30V, VGS = 0V  
VDS = 24V, TJ = 125ºC  
VGS = ±20V, VDS = 0V  
VDS = 10V, ID = 6A  
Zero Gate Voltage Drain Current  
µA  
--  
--  
10  
±100  
--  
Gate Body Leakage  
Forward Transconductance (Note 3)  
IGSS  
gfs  
--  
--  
nA  
S
--  
12  
Dynamic  
Total Gate Charge (Note 3,4)  
Gate-Source Charge (Note 3,4)  
Gate-Drain Charge (Note 3,4)  
Input Capacitance  
Qg  
Qgs  
Qgd  
Ciss  
Coss  
Crss  
--  
--  
--  
--  
--  
--  
24  
4.2  
--  
--  
--  
--  
--  
--  
VDS = 15V, ID = 12A,  
VGS = 4.5V  
nC  
pF  
13  
2200  
280  
177  
VDS = 25V, VGS = 0V,  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Switching  
Turn-On Delay Time (Note 3,4)  
Turn-On Rise Time (Note 3,4)  
Turn-Off Delay Time (Note 3,4)  
Turn-Off Fall Time (Note 3,4)  
td(on)  
tr  
td(off)  
tf  
--  
--  
--  
--  
12.6  
19.5  
42.8  
13.2  
--  
--  
--  
--  
VDD = 15V, ID = 15A,  
ns  
A
VGS = 10V, RGEN =3.3Ω  
Source-Drain Diode Ratings and Characteristic  
Maximum Continuous Drain-Source  
IS  
--  
--  
30  
Diode Forward Current  
Maximum Pulse Drain-Source Diode  
Forward Current  
Integral reverse diode in  
the MOSFET  
ISM  
--  
--  
--  
--  
120  
1
A
V
Diode Forward Voltage  
Note:  
VGS = 0V, IS = 1A  
VSD  
1.  
2.  
3.  
4.  
Pulse width limited by safe operating area  
L=0.1mH, IAS =50A, VDD = 25V, RG = 25Ω, Starting TJ = 25ºC  
Pulse test: pulse width ≤300µs, duty cycle ≤2%  
Switching time is essentially independent of operating temperature.  
2/5  
Version: A14  
TSM042N03CS  
30V N-Channel Power MOSFET  
Electrical Characteristics Curve  
Continuous Drain Current vs. TC  
Gate Charge  
On-Resistance vs. Junction Temperature  
Threshold Voltage vs. Junction Temperature  
Maximum Safe Operating Area  
Normalized Thermal Transient Impedance Curve  
3/5  
Version: A14  
TSM042N03CS  
30V N-Channel Power MOSFET  
SOP-8 Mechanical Drawing  
Unit: Millimeters  
Marking Diagram  
Y
= Year Code  
M
= Month Code for Halogen Free Product  
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,  
X=Oct, Y=Nov, Z=Dec)  
L
= Lot Code  
4/5  
Version: A14  
TSM042N03CS  
30V N-Channel Power MOSFET  
Notice  
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,  
assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, to  
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of  
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,  
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,  
merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify TSC for any damages resulting from such improper use or sale.  
5/5  
Version: A14  

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