TSM2311CXRFG [TSC]
20V P-Channel MOSFET; 20V P沟道MOSFET
| 型号： | TSM2311CXRFG |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 20V P-Channel MOSFET |
| 文件： | 总6页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM2311
20V P-Channel MOSFET
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
55 @ VGS = -4.5V
85 @ VGS = -2.5V
ID (A)
-4.0
-20
-2.5
Features
Block Diagram
●
Advance Trench Process Technology
●
High Density Cell Design for Ultra Low On-resistance
Application
●
Load Switch
PA Switch
●
P-Channel MOSFET
Ordering Information
Part No.
Package
Packing
TSM2311CX RF
TSM2311CX RFG
SOT-23
SOT-23
3Kpcs / 7” Reel
3Kpcs / 7” Reel
Note: “G” denotes Halogen Free Product.
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
-20
Unit
V
Drain-Source Voltage
VDS
VGS
ID
Gate-Source Voltage
±8
V
Continuous Drain Current, VGS @ 4.5V.
Pulsed Drain Current, VGS @ 4.5V
Continuous Source Current (Diode Conduction)a,b
-4
A
IDM
IS
-20
A
-0.72
0.9
A
Ta = 25oC
Ta = 75oC
Maximum Power Dissipation
PD
W
0.57
Operating Junction Temperature
TJ
+150
- 55 to +150
oC
oC
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Performance
Parameter
Symbol
Limit
5
Unit
S
Lead Temperature (1/8” from case)
TL
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
RӨ
250
oC/W
JA
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
c. Surface Mounted on FR4 Board,
1/6
Version: B11
TSM2311
20V P-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State
Resistancea
Forward Transconductancea
Diode Forward Voltage
Dynamicb
VGS = 0V, ID = -250uA
VDS = VGS, ID = -250µA
VGS = ±8V, VDS = 0V
VDS = -16V, VGS = 0V
BVDSS
VGS(TH)
IGSS
-20
-0.6
--
--
--
--
-1.4
±100
-1.0
--
V
V
--
nA
µA
A
IDSS
--
--
VDS
≥
-10V, VGS = -5V
ID(ON)
-6
--
--
VGS = -4.5V, ID = -4A
VGS = -2.5V, ID = -2.5A
VDS = -5V, ID = -4A
45
75
9
55
RDS(ON)
mΩ
--
85
gfs
--
--
S
V
IS = -0.75A, VGS = 0V
VSD
--
- 0.8
-1.2
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
--
--
--
--
--
--
6
9
--
--
--
--
--
VDS = -6V, ID = -4A,
VGS = -4.5V
nC
pF
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
1.4
1.9
640
180
90
VDS = -6V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switchingc
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
tf
--
--
--
--
22
35
45
25
35
55
70
50
VDD = -6V, RL = 6Ω,
ID = -1A, VGEN = -4.5V,
RG = 6Ω
nS
Turn-Off Fall Time
Notes:
a. pulse test: PW
≤
300µS, duty cycle
≤
2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/6
Version: B11
TSM2311
20V P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: B11
TSM2311
20V P-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: B11
TSM2311
20V P-Channel MOSFET
SOT-23 Mechanical Drawing
SOT-23 DIMENSION
MILLIMETERS
INCHES
MIN MAX.
DIM
MIN
0.95 BSC
1.9 BSC
2.60
MAX
A
A1
B
C
D
E
F
G
H
I
0.037 BSC
0.074 BSC
3.00
1.70
3.10
1.30
0.10
0.50
0.20
0.60
10º
0.102
0.118
0.067
0.122
0.051
0.004
0.020
0.008
0.024
10º
1.40
2.80
1.00
0.00
0.35
0.10
0.30
5º
0.055
0.110
0.039
0.000
0.014
0.004
0.012
5º
J
Marking Diagram
11 = Device Code
= Year Code
M = Month Code
Y
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep,
J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
5/6
Version: B11
TSM2311
20V P-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6/6
Version: B11
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