TSM3400CXRF [TSC]
30V N-Channel MOSFET; 30V N沟道MOSFET
| 型号： | TSM3400CXRF |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 30V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM3400
30V N-Channel MOSFET
PRODUCT SUMMARY
SOT-23
Pin Definition:
1. Gate
2. Source
3. Drain
VDS (V)
RDS(on)(mΩ)
28 @ VGS = 10V
33 @ VGS = 4.5V
52 @ VGS = 2.5V
ID (A)
5.8
30
5.0
4.0
Features
Block Diagram
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Application
●
●
Load Switch
PA Switch
Ordering Information
Part No.
Package
SOT-23
Packing
TSM3400CX RF
3Kpcs / 7” Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
VDS
VGS
ID
±12
5.8
V
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a,b
IDM
IS
30
A
A
2.5
Maximum Power Dissipation @ Ta = 25oC
PD
TJ
1.4
+150
W
oC
oC
Operating Junction Temperature
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
Thermal Performance
Parameter
Symbol
RӨJF
Limit
70
Unit
oC/W
Junction to Foot Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
RӨJA
90
oC/W
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
1/1
Version: A09
TSM3400
30V N-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VGS = ±12V, VDS = 0V
VDS = 24V, VGS = 0V
VDS = 5V, VGS = 4.5V
VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 5A
VGS = 2.5V, ID = 4A
VDS = 5V, ID = 5A
BVDSS
VGS(TH)
IGSS
30
0.7
--
--
--
--
1.4
±100
1.0
--
V
V
--
nA
µA
A
Zero Gate Voltage Drain Current
On-State Drain Current
IDSS
--
--
ID(ON)
20
--
--
23
28
43
15
0.76
28
Drain-Source On-State Resistance
RDS(ON)
mΩ
--
33
--
52
Forward Transconductance
Diode Forward Voltage
Dynamicb
gfs
10
--
--
S
V
IS = 1.0A, VGS = 0V
VSD
1.0
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingc
Qg
Qgs
Qgd
Ciss
Coss
Crss
--
--
--
--
--
--
9.7
1.63
3.1
857
97
12
--
VDS = 15V, ID = 5.8A,
VGS = 10V
nC
pF
--
1030
--
VDS = 15V, VGS = 0V,
f = 1.0MHz
71
--
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
tf
--
--
--
--
3.3
4.7
26
5
7
VDD = 15V, RL = 1.8Ω,
ID = 1A, VGEN = 10V,
RG = 6Ω
nS
39
6.2
Turn-Off Fall Time
Notes:
4.1
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/2
Version: A09
TSM3400
30V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/3
Version: A09
TSM3400
30V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25ºC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/4
Version: A09
TSM3400
30V N-Channel MOSFET
SOT-23 Mechanical Drawing
SOT-23 DIMENSION
MILLIMETERS
MIN MAX
0.95 BSC
1.9 BSC
2.60
INCHES
MIN MAX.
DIM
A
A1
B
C
D
E
F
0.037 BSC
0.074 BSC
3.00
1.70
3.10
1.30
0.10
0.50
0.20
0.60
10º
0.102
0.118
0.067
0.122
0.051
0.004
0.020
0.008
0.024
10º
1.40
2.80
1.00
0.00
0.35
0.10
0.30
5º
0.055
0.110
0.039
0.000
0.014
0.004
0.012
5º
G
H
I
J
Marking Diagram
40 = Device Code
= Year Code
M = Month Code
Y
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
5/5
Version: A09
TSM3400
30V N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
6/6
Version: A09
相关型号：
©2020 ICPDF网 联系我们和版权申明