TSM40N03PQ33 [TSC]

30V N-Channel Power MOSFET; 30V N沟道功率MOSFET
TSM40N03PQ33
型号: TSM40N03PQ33
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

30V N-Channel Power MOSFET
30V N沟道功率MOSFET

文件: 总4页 (文件大小:107K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TSM40N03PQ33  
30V N-Channel Power MOSFET  
PDFN33  
PRODUCT SUMMARY  
Pin Definition:  
1. Source  
2. Source  
3. Source  
4. Gate  
8. Drain  
VDS (V)  
RDS(on)(m)  
4.6 @ VGS =10V  
5.9 @ VGS =4.5V  
ID (A)  
19  
7. Drain  
6. Drain  
5. Drain  
30  
16  
Features  
Block Diagram  
Advanced Trench Technology  
Low On-Resistance  
Low gate charge typical @ 12nC (Typ.)  
Low Crss typical @ 140pF (Typ.)  
Ordering Information  
Part No.  
Package  
Packing  
TSM40N03PQ33 RGG  
PDFN33  
5Kpcs / 13” Reel  
Note: “G” denote for Halogen Free Product  
N-Channel MOSFET  
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)  
Parameter  
Symbol  
Limit  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
TC=25°C  
VDS  
VGS  
30  
±20  
V
40  
TC=70°C  
40  
Continuous Drain Current  
TA=25°C  
ID  
A
25  
TA=70°C  
Drain Current-Pulsed Note 1  
Avalanche Current, L=0.5mH  
Avalanche Energy, L=0.5mH  
TC=25°C  
20  
IDM  
100  
A
A
IAS, IAR  
EAS, EAR  
38  
72  
52  
mJ  
TC=70°C  
Maximum Power Dissipation  
33  
PD  
W
TA=25°C  
3.8  
TA=70°C  
Storage Temperature Range  
2.4  
TSTG  
TJ  
-55 to +150  
-55 to +150  
°C  
°C  
Operating Junction Temperature Range  
* Limited by maximum junction temperature  
Thermal Performance  
Parameter  
Symbol  
RӨJC  
Limit  
2.4  
Unit  
oC/W  
oC/W  
Thermal Resistance - Junction to Case  
Thermal Resistance - Junction to Ambient  
Notes: Surface mounted on FR4 board t 10sec  
RӨJA  
33  
1/4  
Version: A12  
TSM40N03PQ33  
30V N-Channel Power MOSFET  
Electrical Specifications (Ta = 25oC unless otherwise noted)  
Parameter  
Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
VGS = 0V, ID = 250uA  
VGS = 10V, ID = 19A  
VGS = 4.5V, ID = 16A  
VDS = VGS, ID = 250uA  
VDS = 30V, VGS = 0V  
VGS = ±20V, VDS = 0V  
BVDSS  
30  
--  
--  
3.6  
4.8  
--  
--  
4.6  
5.9  
2.2  
1
V
Drain-Source On-State Resistance  
RDS(ON)  
mΩ  
--  
Gate Threshold Voltage  
Zero Gate Voltage Drain Current  
Gate Body Leakage  
Dynamic  
VGS(TH)  
IDSS  
1.15  
--  
V
--  
uA  
nA  
IGSS  
--  
--  
±100  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Input Capacitance  
Qg  
Qgs  
Qgd  
Ciss  
Coss  
Crss  
--  
--  
--  
--  
--  
--  
12  
5.4  
--  
--  
--  
--  
--  
--  
VDS = 15V, ID = 19A,  
VGS = 4.5V  
nC  
pF  
4.6  
1700  
350  
140  
VDS = 15V, VGS = 0V,  
Output Capacitance  
Reverse Transfer Capacitance  
Switching  
f = 1.0MHz  
Turn-On Delay Time  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
td(on)  
tr  
td(off)  
tf  
--  
--  
--  
--  
25  
20  
25  
15  
--  
--  
--  
--  
VGS = 4.5V, VDS = 15V,  
nS  
V
RG = 1Ω  
Drain-Source Diode Characteristics and Maximum Rating  
Drain-Source Diode Forward  
VGS=0V, IS=10A  
Voltage  
VSD  
--  
0.8  
1.2  
IS = 10A, TJ=25 oC  
Reverse Recovery Time  
tfr  
--  
--  
25  
17  
--  
--  
nS  
nC  
dI/dt = 100A/us  
Reverse Recovery Charge  
Notes:  
Qfr  
1. Pulse Test: Pulse Width 300µs, Duty Cycle 2%.  
2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal  
reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA  
is determined by the user's board design. RθJA shown below for single device operation on FR-4 in still air  
3. The maximum current rating is limited by package.  
2/4  
Version: A12  
TSM40N03PQ33  
30V N-Channel Power MOSFET  
PDFN33 Mechanical Drawing  
Unit: Millimeters  
3/4  
Version: A12  
TSM40N03PQ33  
30V N-Channel Power MOSFET  
Notice  
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,  
assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, to  
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of  
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,  
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,  
merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify TSC for any damages resulting from such improper use or sale.  
4/4  
Version: A12  

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