TSM4416DCSRLG [TSC]
30V Dual N-Channel MOSFET; 30V双N沟道MOSFET
| 型号： | TSM4416DCSRLG |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 30V Dual N-Channel MOSFET |
| 文件： | 总6页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM4416D
30V Dual N-Channel MOSFET
SOP-8
Pin Definition:
1. Source 1
2. Gate 1
3. Source 2
4. Gate 2
PRODUCT SUMMARY
8. Drain 1
7. Drain 1
6. Drain 2
5. Drain 2
VDS (V)
RDS(on)(mΩ)
ID (A)
15 @ VGS = 4.5V
24 @ VGS = 2.5V
11
10
30
Features
Block Diagram
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
●
Application
●
Load Switch
●
PWM Application
Ordering Information
Part No.
Package
Packing
TSM4416DCS RL
TSM4416DCS RLG
SOP-8
SOP-8
2.5Kpcs / 13” Reel
2.5Kpcs / 13” Reel
Dual N-Channel MOSFET
Note: “G” denotes Halogen Free Product.
Absolute Maximum Rating (TA=25oC, unless otherwise noted)
Parameter
Symbol
Limit
30
Unit
V
Drain-Source Voltage
VDS
VGS
ID
Gate-Source Voltage
±20
V
Continuous Drain Current
8.5
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a,b
IDM
IS
40
A
2.6
A
Ta = 25oC
Ta = 75oC
2.5
Maximum Power Dissipation
PD
TJ
W
1.6
Operating Junction Temperature
+150
-55 to +150
oC
oC
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Performance
Parameter
Symbol
Limit
25
Unit
oC/W
oC/W
Thermal Resistance Junction to Foot
RӨ
JF
Thermal Resistance Junction to Ambient
Notes:
RӨ
50
JA
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 5 sec.
1/6
Version: A11
TSM4416D
30V Dual N-Channel MOSFET
Electrical Specifications
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
VGS = 0V, ID = 250uA
VDS = VGS, ID = 250µA
VGS = ±20V, VDS = 0V
VDS = 24V, VGS = 0V
VGS = 4.5V, ID = 10A
VDS = 15V, ID = 10A
IS = 1A, VGS = 0V
BVDSS
VGS(TH)
IGSS
30
1
--
1.8
--
--
3
V
V
--
--
--
--
--
--
±100
-1.0
15
nA
uA
Zero Gate Voltage Drain Current
IDSS
--
12
16
17
0.71
Drain-Source On-State Resistance
RDS(ON)
mΩ
24
Forward Transconductance
Diode Forward Voltage
Dynamicb
gfs
--
S
V
VGS = 0V, ID = 250uA
VSD
1.0
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Qg
Qgs
Qgd
Ciss
Coss
Crss
--
--
--
--
--
--
7.7
1.6
10.01
2.08
4.03
--
VDS = 15V, ID = 10A,
VGS = 5V
nC
pF
3.1
890
159.6
83.2
VDS = 15V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switchingb,c
--
--
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
tf
--
--
--
--
11.1
8.4
22.2
16.8
50.6
5.6
V
DD = 15V, ID = 10A,
nS
VGEN = 10V, RG = 0.3Ω
25.3
2.8
Turn-Off Fall Time
Notes:
a. pulse test: PW
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
≤
300µS, duty cycle
≤
2%
2/6
Version: A11
TSM4416D
30V Dual N-Channel MOSFET
Electrical Characteristics Curve (TA=25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: A11
TSM4416D
30V Dual N-Channel MOSFET
Electrical Characteristics Curve (TA=25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Safety Operation Area
4/6
Version: A11
TSM4416D
30V Dual N-Channel MOSFET
SOP-8 Mechanical Drawing
SOP-8 DIMENSION
MILLIMETERS
INCHES
MIN
DIM
MIN
4.80
3.80
1.35
0.35
0.40
MAX
5.00
4.00
1.75
0.49
1.25
MAX.
0.196
0.157
0.068
0.019
0.049
A
B
C
D
F
0.189
0.150
0.054
0.014
0.016
G
K
M
P
R
1.27BSC
0.05BSC
0.10
0º
0.25
7º
0.004
0º
0.009
7º
5.80
0.25
6.20
0.50
0.229
0.010
0.244
0.019
Marking Diagram
Y
= Year Code
M
= Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug,
W=Sep, X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
5/6
Version: A11
TSM4416D
30V Dual N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
6/6
Version: A11
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