TSM480P06CZC0G [TSC]

60V P-Channel Power MOSFET;
TSM480P06CZC0G
型号: TSM480P06CZC0G
厂家: TAIWAN SEMICONDUCTOR COMPANY, LTD    TAIWAN SEMICONDUCTOR COMPANY, LTD
描述:

60V P-Channel Power MOSFET

文件: 总9页 (文件大小:891K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
TSM480P06  
60V P-Channel Power MOSFET  
TO-220  
ITO-220  
Key Parameter Performance  
Pin Definition:  
1. Gate  
2. Drain  
Parameter  
Value  
-60  
Unit  
3. Source  
VDS  
V
VGS = -10V  
VGS = -4.5V  
48  
RDS(on) (max)  
Qg  
mΩ  
65  
22.4  
nC  
TO-251S  
(IPAK)  
TO-252  
(DPAK)  
Block Diagram  
Ordering Information  
Part No.  
Package  
TO-220  
Packing  
50pcs / Tube  
50pcs / Tube  
75pcs / Tube  
2.5kpcs / 13Reel  
TSM480P06CZ C0G  
TSM480P06CI C0G  
TSM480P06CH X0G  
TSM480P06CP ROG  
ITO-220  
TO-251S  
TO-252  
Note: Gdenotes for Halogen- and Antimony-free as those which contain  
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm  
antimony compounds  
P-Channel MOSFE  
Absolute Maximum Ratings (Tc = 25°C unless otherwise noted)  
Limit  
Parameter  
Symbol  
Unit  
IPAK/DPAK  
ITO-220  
-60  
TO-220  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
VGS  
V
V
±20  
-20  
Tc = 25°C  
A
Continuous Drain Current (Note 1)  
ID  
-13  
Tc = 100°C  
A
Pulsed Drain Current (Note 2)  
IDM  
EAS  
IAS  
A
-64  
Single Pulse Avalanche Energy(Note 3)  
Single Pulse Avalanche Current (Note 2)  
Power Dissipation @ TC = 25°C  
Operating Junction Temperature  
Storage Temperature Range  
51  
mJ  
A
-32  
PD  
40  
27  
66  
W
°C  
°C  
TJ  
-50 to +150  
-50 to +150  
TSTG  
1/9  
Version: D14  
TSM480P06  
60V P-Channel Power MOSFET  
Thermal Performance  
Parameter  
Limit  
Unit  
Symbol  
IPAK/DPAK ITO-220  
TO-220  
Thermal Resistance - Junction to Case  
Thermal Resistance - Junction to Ambient  
RӨJC  
RӨJA  
3.1  
4.7  
62  
1.9  
°C/W  
°C/W  
Electrical Specifications (TC = 25°C unless otherwise noted)  
Parameter  
Conditions  
Symbol  
Min  
Typ  
Max  
Unit  
Static  
Drain-Source Breakdown Voltage  
VGS = 0V, ID = 250µA  
VGS = -10V, ID = -8A  
VGS = -4.5V, ID = -4A  
VDS = VGS, ID = -250µA  
BVDSS  
-60  
--  
--  
39  
--  
48  
V
Drain-Source On-State Resistance  
Gate Threshold Voltage  
RDS(ON)  
VGS(TH)  
mΩ  
53  
65  
-1.2  
-1.6  
-2.2  
V
VDS = -60V, VGS = 0V  
VDS = -48V, Tc = 125°C  
VGS = ±20V, VDS = 0V  
VDS = -10V, ID = -8A  
--  
--  
--  
--  
--  
--  
-1  
-10  
±100  
--  
Zero Gate Voltage Drain Current  
IDSS  
µA  
Gate Body Leakage  
Forward Transconductance (Note 4)  
IGSS  
gfs  
--  
nA  
S
10  
Dynamic  
Total Gate Charge (Note 4,5)  
Gate-Source Charge (Note 4,5)  
Gate-Drain Charge (Note 4,5)  
Input Capacitance  
Qg  
Qgs  
Qgd  
Ciss  
Coss  
Crss  
--  
--  
--  
--  
--  
--  
22.4  
4.1  
--  
--  
--  
--  
--  
--  
VDS = -30V, ID = -8A,  
VGS = -10V  
nC  
pF  
5.2  
1250  
85  
VDS = -30V, VGS = 0V,  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
65  
Switching  
Turn-On Delay Time (Note 4,5)  
Turn-On Rise Time (Note 4,5)  
Turn-Off Delay Time (Note 4,5)  
Turn-Off Fall Time (Note 4,5)  
td(on)  
tr  
td(off)  
tf  
--  
--  
--  
--  
13  
--  
--  
--  
--  
42.4  
64.6  
16.4  
VDD = -30V, ID = -1A,  
ns  
A
RGEN =6Ω  
Source-Drain Diode Ratings and Characteristic  
Maximum Continuous Drain-Source  
IS  
--  
--  
-16  
Diode Forward Current  
Maximum Pulse Drain-Source Diode  
Forward Current  
Integral reverse diode in  
the MOSFET  
ISM  
--  
--  
--  
--  
-64  
-1  
A
V
Diode-Source Forward Voltage  
Note:  
VGS = 0V, IS = -1A  
VSD  
1. Limited by maximum junction temperature  
2. Pulse width limited by safe operating area  
3. L = 3.68mH, IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C  
4. Pulse test: pulse width 300µs, duty cycle 2%  
5. Switching time is essentially independent of operating temperature  
2/9  
Version: D14  
TSM480P06  
60V P-Channel Power MOSFET  
Electrical Characteristics Curve  
Continuous Drain Current VS. Tc  
Normalized Rds(on) VS. Tj  
TJ, Junction Temperature (°C)  
TC, Case Temperature (°C)  
Normalized Vth VS. Tj  
Gate Charge Waveform  
Qg, Gate Charge (nC)  
TJ, Junction Temperature (°C)  
Normalized Transient Impedance (TO-220)  
Maximum Safe Operation Area (TO-220)  
Square Wave Pulse Duration (s)  
-VDS, Drain to Source Voltage (V)  
3/9  
Version: D14  
TSM480P06  
60V P-Channel Power MOSFET  
Electrical Characteristics Curve  
Normalized Transient Impedance (ITO-220)  
Maximum Safe Operation Area (ITO-220)  
Square Wave Pulse Duration (s)  
-VDS, Drain to Source Voltage (V)  
Normalized Transient Impedance (TO-251S)  
Maximum Safe Operation Area (TO-251S)  
Square Wave Pulse Duration (s)  
-VDS, Drain to Source Voltage (V)  
Normalized Transient Impedance (TO-252)  
Maximum Safe Operation Area (TO-252)  
Square Wave Pulse Duration (s)  
-VDS, Drain to Source Voltage (V)  
4/9  
Version: D14  
TSM480P06  
60V P-Channel Power MOSFET  
TO-220 Mechanical Drawing  
Unit: Millimeters  
Marking Diagram  
G
Y
= Halogen Free  
= Year Code  
WW = Week Code (01~52)  
= Factory Code  
F
5/9  
Version: D14  
TSM480P06  
60V P-Channel Power MOSFET  
ITO-220 Mechanical Drawing  
Unit: Millimeters  
Marking Diagram  
G
Y
= Halogen Free  
= Year Code  
WW = Week Code (01~52)  
= Factory Code  
F
6/9  
Version: D14  
TSM480P06  
60V P-Channel Power MOSFET  
TO-251S Mechanical Drawing  
Unit: Millimeters  
Marking Diagram  
Y
= Year Code  
M = Month Code for Halogen Free Product  
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,  
X=Oct, Y=Nov, Z=Dec)  
L
= Lot Code  
7/9  
Version: D14  
TSM480P06  
60V P-Channel Power MOSFET  
TO-252 Mechanical Drawing  
Unit: Millimeters  
Marking Diagram  
Y
= Year Code  
M = Month Code for Halogen Free Product  
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,  
X=Oct, Y=Nov, Z=Dec)  
L
= Lot Code  
8/9  
Version: D14  
TSM480P06  
60V P-Channel Power MOSFET  
Notice  
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,  
assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, to  
any intellectual property rights is granted by this document. Except as provided in TSCs terms and conditions of  
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,  
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,  
merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify TSC for any damages resulting from such improper use or sale.  
9/9  
Version: D14  

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