TSM4946DCSRL [TSC]
60V Dual N-Channel MOSFET; 60V双N沟道MOSFET
| 型号： | TSM4946DCSRL |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 60V Dual N-Channel MOSFET |
| 文件： | 总6页 (文件大小：243K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM4946D
60V Dual N-Channel MOSFET
PRODUCT SUMMARY
SOP-8
Pin Definition:
1. Source 1
2. Gate 1
3. Source 2
4. Gate 2
8. Drain 1
7. Drain 1
6. Drain 2
5. Drain 2
VDS (V)
RDS(on)(mΩ)
55 @ VGS = 10V
75 @ VGS = 4.5V
ID (A)
4.5
60
3.9
Features
Block Diagram
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Application
●
●
●
High-Side DC/DC Conversion
Notebook
Sever
Ordering Information
Part No.
Package
Packing
Dual N-Channel MOSFET
TSM4946DCS RL
TSM4946DCS RLG
SOP-8
SOP-8
2.5Kpcs / 13” Reel
2.5Kpcs / 13” Reel
Note: “G” denote for Green Product
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
V
Drain-Source Voltage
VDS
VGS
ID
60
Gate-Source Voltage
±20
V
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a,b
4.5
A
IDM
IS
30
A
2
2.4
A
Ta = 25oC
Ta = 75oC
Maximum Power Dissipation
PD
W
1.7
Operating Junction Temperature
TJ
+150
oC
oC
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
Thermal Performance
Parameter
Symbol
RӨJF
Limit
32
Unit
oC/W
oC/W
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
RӨJA
62.5
a. Pulse width limited by the Maximum junction temperature
b. Surface Mounted on FR4 Board, t ≤ 10 sec.
1/1
Version: A09
TSM4946D
60V Dual N-Channel MOSFET
Electrical Specifications
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
VGS = 0V, ID = 250uA
VDS = VGS, ID = 250µA
VGS = ±20V, VDS = 0V
VDS = 60V, VGS = 0V
VDS = 5V, VGS = 10V
VGS = 10V, ID = 4.5A
VGS = 4.5V, ID = 3.9A
VDS = 15V, ID = 4.5A
IS = 2A, VGS = 0V
BVDSS
VGS(TH)
IGSS
60
1
--
--
--
3
V
V
--
--
±100
2
nA
µA
A
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
--
--
ID(ON)
20
--
--
--
45
55
13
0.9
55
75
--
Drain-Source On-State Resistancea
RDS(ON)
mΩ
--
Forward Transconductancea
Diode Forward Voltage
Dynamicb
gfs
--
S
V
VSD
--
1.2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Qg
Qgs
Qgd
Ciss
Coss
Crss
--
--
--
--
--
--
19
4
30
--
VDS = 30V, ID = 4.5A,
VGS = 10V
nC
pF
3
--
910
145
67
--
VDS = 24V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switchingc
--
--
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
tf
--
--
--
--
13
11
36
11
20
20
60
20
VDD = 30V, RL = 30Ω,
ID = 1A, VGEN = 10V,
RG = 6Ω
nS
Turn-Off Fall Time
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/2
Version: A09
TSM4946D
60V Dual N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/3
Version: A09
TSM4946D
60V Dual N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Single Pulse Power
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/4
Version: A09
TSM4946D
60V Dual N-Channel MOSFET
SOP-8 Mechanical Drawing
SOP-8 DIMENSION
MILLIMETERS
INCHES
MIN
DIM
MIN
4.80
3.80
1.35
0.35
0.40
MAX
5.00
4.00
1.75
0.49
1.25
MAX.
0.196
0.157
0.068
0.019
0.049
A
B
C
D
F
0.189
0.150
0.054
0.014
0.016
G
K
M
P
R
1.27BSC
0.05BSC
0.10
0º
0.25
7º
0.004
0º
0.009
7º
5.80
0.25
6.20
0.50
0.229
0.010
0.244
0.019
Marking Diagram
Y
= Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
= Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug,
W=Sep, X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
5/5
Version: A09
TSM4946D
60V Dual N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
6/6
Version: A09
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