TSM4N60CHC5 [TSC]
600V N-Channel Power MOSFET; 600V N沟道功率MOSFET
| 型号： | TSM4N60CHC5 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 600V N-Channel Power MOSFET |
| 文件： | 总9页 (文件大小：474K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM4N60
600V N-Channel Power MOSFET
TO-220
ITO-220
TO-251
(IPAK)
TO-252
(DPAK)
Pin Definition:
1. Gate
PRODUCT SUMMARY
2. Drain
3. Source
VDS (V)
RDS(on)(Ω)
ID (A)
600
2.5 @ VGS =10V
2
General Description
The TSM4N60 is produced using advanced planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. There devices are
well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts
base on half bridge topology.
Block Diagram
Features
●
●
●
●
Robust high voltage termination
Avalanche energy specified
Diode is characterized for use in bridge circuits
Source to Drain diode recovery time comparable to a
discrete fast recovery diode.
Ordering Information
Part No.
Package
Packing
50pcs / Tube
TSM4N60CZ C0
TSM4N60CI C0
TSM4N60CH C5
TSM4N60CP RO
TO-220
ITO-220
TO-251
TO-252
50pcs / Tube
80pcs / Tube
N-Channel MOSFET
2.5Kpcs / 13” Reel
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
Limit
600
±30
4
Unit
V
VDS
VGS
ID
Gate-Source Voltage
V
Continuous Drain Current
A
Pulsed Drain Current
IDM
16
A
Single Pulse Drain to Source Avalanche Energy
(VDD = 50V, IAS=4A, L=27.5mH, RG=25Ω), Starting TJ = 25oC
Repetitive Avalanche Energy
EAS
EAR
dv/dt
240
10
mJ
mJ
(Pulse width limited by junction temperature)
Peak Diode Recovery dv/dt
4.5
70
V/ns
(ISD ≤ 4A, di/dt ≤ 200A/us, VDD ≤ BVDSS) Starting TJ=25ºC
TO-220 / TO-251 / TO-252
ITO-220
Maximum Power Dissipation
@Ta = 25oC
PD
W
25
Operating Junction Temperature
TJ
+150
oC
oC
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
1/9
Version: A07
TSM4N60
600V N-Channel Power MOSFET
Thermal Performance
Parameter
Symbol
Limit
1.78
5
62.5
100
Unit
oC/W
Thermal Resistance
Junction to Case
Thermal Resistance
Junction to Ambient
TO-220 / TO-251 / TO-252
ITO-220
RӨJC
TO-220 / ITO-220
TO-251 / TO-252
RӨJA
oC/W
Notes: Surface mounted on FR4 board t ≤ 10sec
Electrical Specifications (Ta=25oC, unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0V, ID = 250uA
ID = 250uA
BVDSS
∆BVDSS
/ TJ
600
--
--
--
--
V
0.6
V/ oC
Referenced to 25oC
VDS = 600V, VGS = 0V
VGS = ±30V, VDS = 0V
Zero Gate Voltage Drain Current
Gate Body Leakage
IDSS
--
--
--
--
10
uA
nA
IGSS
± 100
On Characteristics
Gate Threshold Voltage
Drain-Source On-State Resistance
Dynamic Characteristics
Total Gate Charge
VDS = VGS, ID = 250uA
VGS = 10V, ID = 2A
VGS(TH)
RDS(ON)
2.0
--
--
2
4.0
2.5
V
Ω
Qg
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
--
--
--
--
--
--
--
--
--
--
15
2.8
6.2
545
60
8
20
--
VDS = 480V, ID = 4A,
VGS = 10V
nC
pF
Gate-Source Charge
Gate-Drain Charge
--
Input Capacitance
710
80
11
30
80
100
90
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
10
35
45
40
Turn-On Rise Time
VGS = 10V, ID = 4A,
VDD = 300V, RG = 25Ω
nS
Turn-Off Delay Time
td(off)
tf
Turn-Off Fall Time
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulse Source Current
Integral Reverse p-n Junction
IS
ISM
VSD
trr
--
--
--
--
--
--
--
4
16
1.4
--
A
Diode in the MOSFET
IS = 4A, VGS = 0V
IS = 4A, VGS = 0V
dlF/dt=100A/us
Diode Forward Voltage
Reverse Recovery Time
--
V
300
2.2
nS
uC
Reverse Recovery Charge
Notes:
Qrr
--
a. Pulse test: pulse width <=300uS, duty cycle <=2%
b. Essentially Independent of Operating Temperature.
2/9
Version: A07
TSM4N60
600V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25 oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/9
Version: A07
TSM4N60
600V N-Channel Power MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Breakdown Voltage vs. Temperature
Threshold Voltage vs. Temperature
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/9
Version: A07
TSM4N60
600V N-Channel Power MOSFET
TO-220 Mechanical Drawing
TO-220 DIMENSION
MILLIMETERS
INCHES
MIN
DIM
MIN
10.000
3.740
2.440
-
MAX
10.500
3.910
MAX
0.413
0.154
0.116
0.250
0.040
0.058
0.107
0.581
0.355
0.650
0.190
0.055
1.230
0.115
0.024
0.270
A
B
C
D
E
F
G
H
I
0.394
0.147
0.096
-
2.940
6.350
1.106
2.715
5.430
14.732
9.017
16.510
4.826
1.397
29.620
2.921
0.610
6.858
0.381
2.345
4.690
12.700
8.382
14.224
3.556
0.508
27.700
2.032
0.255
5.842
0.015
0.092
0.092
0.500
0.330
0.560
0.140
0.020
1.060
0.080
0.010
0.230
J
K
L
M
N
O
P
5/9
Version: A07
TSM4N60
600V N-Channel Power MOSFET
ITO-220 Mechanical Drawing
ITO-220 DIMENSION
MILLIMETERS
INCHES
DIM
MIN
MAX
MIN
0.395
MAX
A
B
C
D
E
F
G
H
I
10.04
10.07
0.396
6.20 (typ.)
0.244 (typ.)
2.20 (typ.)
0.087 (typ.)
∮1.40 (typ.)
∮0.055 (typ.)
15.0
15.20
0.54
2.73
13.55
1.49
2.80
4.50
0.591
0.598
0.021
0.107
0.533
0.058
0.110
0.177
0.52
2.35
13.50
1.11
2.60
4.49
0.020
0.093
0.531
0.044
0.102
0.176
J
K
L
1.15 (typ.)
0.045 (typ.)
M
N
O
3.03
2.60
6.55
3.05
2.80
6.65
0.119
0.102
0.258
0.120
0.110
0.262
6/9
Version: A07
TSM4N60
600V N-Channel Power MOSFET
SOT-251 Mechanical Drawing
TO-251 DIMENSION
MILLIMETERS INCHES
MIN
DIM
MIN
2.20
1.10
0.40
0.40
6.70
5.40
6.40
2.10
0.40
7.00
1.60
MAX
2.4
MAX
0.095
0.051
0.032
0.024
0.287
0.222
0.262
0.098
0.024
0.315
0.073
A
A1
b
0.087
0.043
0.016
0.016
0.264
0.213
0.252
0.083
0.016
0.276
0.063
1.30
0.80
0.60
7.30
5.65
6.65
2.50
0.60
8.00
1.86
C
D
D1
E
e
F
L
L1
7/9
Version: A07
TSM4N60
600V N-Channel Power MOSFET
SOT-252 Mechanical Drawing
TO-252 DIMENSION
MILLIMETERS INCHES
MIN MAX MIN MAX
2.3BSC
4.6BSC
6.80
DIM
A
A1
B
0.09BSC
0.18BSC
7.20
5.90
6.65
2.40
0.20
5.40
0.85
0.65
0.65
1.50
2.80
1.10
1.50
1.70
0.268
0.283
0.232
0.262
0.094
0.008
0.213
0.033
0.026
0.026
0.059
0.110
0.043
0.059
0.67
C
D
E
5.65
6.40
2.20
0.00
5.20
0.75
0.55
0.35
0.90
2.20
0.50
0.90
1.30
0.222
0.252
0.087
0.000
0.205
0.030
0.022
0.014
0.035
0.087
0.020
0.035
0.051
F
G
G1
G2
H
I
J
K
L
M
8/9
Version: A07
TSM4N60
600V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
9/9
Version: A07
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