TSM4N60ECHC5G [TSC]
600V, 4A, 2.5Ω N-Channel Power MOSFET;
| 型号： | TSM4N60ECHC5G |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 600V, 4A, 2.5Ω N-Channel Power MOSFET |
| 文件： | 总7页 (文件大小：1202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM4N60E
600V, 4A, 2.5Ω
N-Channel Power MOSFET
Pin Definition:
1. Gate
2. Drain
TO-251
(IPAK)
TO-252
(DPAK)
Key Parameter Performance
Parameter
VDS
Value
600
2.5
Unit
V
3. Source
RDS(on)(max)
Qg (typ)
Ω
13
nC
Features
Block Diagram
●
●
100% Avalanche Tested
G-S ESD Protection Diode Embedded
Ordering Information
Part No.
Package
Packing
75pcs / Tube
TSM4N60ECH C5G
TO-251
TSM4N60ECP ROG
TO-252
2.5kpcs / 13” Reel
Note: “G” denotes for Halogen- and Antimony-free as those which contain
<900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds
N-Channel MOSFET with ESD Protection
Absolute Maximum Ratings (Tc=25oC unless otherwise noted)
Parameter
Symbol
VDS
Limit
600
±30
4
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
V
Tc=25℃
A
Continuous Drain Current (Note 1)
ID
2.34
16
Tc=100℃
A
Pulsed Drain Current (Note 2)
IDM
IAR
A
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy(Note 1)
Single Pulse Avalanche Energy (Note 3)
A
4
8.62
EAR
EAS
mJ
mJ
W
192
@ TC = 25℃
86.2
Total Power Dissipation
PD
Derate above TC = 25℃
0.68
W/℃
V/ns
℃
Peak Diode Recovery dV/dt (Note 4)
Operating Junction Temperature
Storage Temperature Range
dV/dt
TJ
4.5
150
-55 to +150
TSTG
℃
Thermal Performance
Parameter
Symbol
Limit
Unit
Thermal Resistance - Junction to Case
Thermal Resistance - Junction to Ambient
RӨJC
RӨJA
1.45
110
℃/W
℃/W
1/7
Version: A14
TSM4N60E
600V, 4A, 2.5Ω
N-Channel Power MOSFET
Electrical Specifications (TC = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max Unit
Static (Note 5)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250µA
VGS = 10V, ID = 2A
BVDSS
600
--
--
2
--
2.5
5
V
Drain-Source On-State Resistance
Gate Threshold Voltage
RDS(ON)
VGS(TH)
Ω
VDS = VGS, ID = 250µA
3
--
V
VDS = 600V, VGS = 0V
VDS = 480V, TJ = 125℃
VGS = ±30V, VDS = 0V
VDS = 30V, ID = 2A
--
--
--
--
--
--
--
6
1
10
Zero Gate Voltage Drain Current
IDSS
µA
Gate Body Leakage
Forward Transconductance
Dynamic (Note 6)
IGSS
gfs
±100
--
µA
S
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Qg
Qgs
Qgd
Ciss
Coss
Crss
--
--
--
--
--
--
--
--
--
--
--
--
12
3
VDS = 480V, ID = 4A,
VGS = 10V
nC
pF
6
545
61
10
VDS = 25V, VGS = 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Switching (Note 7)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
--
--
--
--
--
--
--
--
18
27
47
21
VDD = 300V, VGS = 10V,
RG = 25Ω, ID = 4A
ns
Source-Drain Diode Ratings and Characteristic (Note 5)
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulse Drain-Source Diode Forward Current
IS
ISM
VSD
trr
--
--
--
--
--
--
--
A
A
4
16
Diode-Source Forward Voltage
Reverse Recovery Time
VGS = 0V, IS = 4A
--
V
1.5
--
316
1.2
ns
nC
VGS = 0V, IS = 4A
dIF/dt = 100A/µs
Reverse Recovery Charge
Qrr
--
Notes:
1. Current limited by package
2. Pulse width limited by the maximum junction temperature
3. VDD = 50V, L= 22mH, IAS = 4A, RG = 25Ω, Starting TJ = 25℃
4. ISD ≤ 4A, di/dt ≤ 200A/µs, VDD ≤ BVDS, Starting TJ = 25℃
5. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
6. For DESIGN AID ONLY, not subject to production testing.
7. Switching time is essentially independent of operating temperature.
2/7
Version: A14
TSM4N60E
600V, 4A, 2.5Ω
N-Channel Power MOSFET
Electrical Characteristics Curves (TC = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/7
Version: A14
TSM4N60E
600V, 4A, 2.5Ω
N-Channel Power MOSFET
Electrical Characteristics Curve (TC = 25oC, unless otherwise noted)
Drain Current vs. Case Temperature
BVDSS vs. Junction Temperature
Threshold Voltage vs. Junction Temperature
Capacitance vs. Drain-Source Voltage
Maximum Safe Operating Area
Normalized Transient Impedance
4/7
Version: A14
TSM4N60E
600V, 4A, 2.5Ω
N-Channel Power MOSFET
TO-251 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
5/7
Version: A14
TSM4N60E
600V, 4A, 2.5Ω
N-Channel Power MOSFET
TO-252 Mechanical Drawing
Unit: Millimeters
Marking Diagram
Y
= Year Code
M = Month Code for Halogen Free Product
(O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep,
X=Oct, Y=Nov, Z=Dec)
L
= Lot Code
6/7
Version: A14
TSM4N60E
600V, 4A, 2.5Ω
N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
7/7
Version: A14
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