TSM4N70CHC5G [TSC]
N-Channel Power MOSFET;
| 型号： | TSM4N70CHC5G |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | N-Channel Power MOSFET |
| 文件： | 总9页 (文件大小：726K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM4N70
Taiwan Semiconductor
N-Channel Power MOSFET
700V, 3.5A, 3.3Ω
FEATURES
KEY PERFORMANCE PARAMETERS
●
●
●
●
High power and current handling capability
PARAMETER
VALUE
UNIT
Pb-free plating
VDS
RDS(on) (max)
Qg
700
V
RoHS compliant
3.3
Ω
Halogen-free mold compound
14
nC
APPLICATION
●
Power Supply
●
Lighting
TO-251
(IPAK)
TO-252
(DPAK)
ITO-220
Notes: Moisture sensitivity level: level 3. Per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
LIMIT
PARAMETER
SYMBOL
UNIT
ITO-220 IPAK/DPAK
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
700
±30
V
V
TC = 25°C
2
1.3
8
3.5
1.6
14
Continuous Drain Current (Note 1)
ID
A
TC = 100°C
Pulsed Drain Current (Note 2)
IDM
PDTOT
EAS
A
W
mJ
A
Total Power Dissipation @ TC = 25°C
Single Pulsed Avalanche Energy (Note 3)
Single Pulsed Avalanche Current (Note 3)
38
56
43
IAS
3.5
Operating Junction and Storage Temperature Range
TJ, TSTG
- 55 to +150
°C
THERMAL PERFORMANCE
LIMIT
PARAMETER
SYMBOL
UNIT
ITO-220 IPAK/DPAK
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance
RӨJC
RӨJA
3.6
2.2
°C/W
°C/W
62
50
Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case thermal reference is defined
at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board
design. RӨJA shown below for single device operation on FR-4 PCB in still air
Document Number: DS_P0000167
1
Version: A15
TSM4N70
Taiwan Semiconductor
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER
Static (Note 4)
CONDITIONS
SYMBOL
MIN
TYP
MAX UNIT
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
VGS = ±30V, VDS = 0V
VDS = 700V, VGS = 0V
VGS = 10V, ID = 2A
BVDSS
VGS(TH)
IGSS
700
2
--
--
--
4
V
V
--
--
±100
25
nA
µA
Ω
Zero Gate Voltage Drain Current
IDSS
--
--
Drain-Source On-State Resistance
Dynamic (Note 5)
RDS(on)
--
2.5
3.3
Total Gate Charge
Qg
Qgs
Qgd
Ciss
Coss
Crss
--
--
--
--
--
--
14
3
--
--
--
--
--
--
VDS = 480V, ID = 4A,
VGS = 10V
Gate-Source Charge
Gate-Drain Charge
nC
pF
6
Input Capacitance
595
80
20
VDS = 25V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Switching (Note 6)
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
--
--
--
--
18
17
--
--
--
--
VDD = 300V,
RGEN = 25Ω,
ns
V
40.5
19
ID = 4A, VGS = 10V,
Source-Drain Diode (Note 4)
Forward On Voltage
--
--
1.5
IS = 2.5A, VGS = 0V
VSD
Notes:
1. Current limited by package
2. Pulse width limited by the maximum junction temperature
3. L = 7mH, IAS = 3.5A, VDD = 50V, RG = 25Ω, Starting TJ = 25oC
4. Pulse test: PW ≤ 300µs, duty cycle ≤ 2%
5. For DESIGN AID ONLY, not subject to production testing.
6. Switching time is essentially independent of operating temperature.
Document Number: DS_P0000167
2
Version: A15
TSM4N70
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
TSM4N70CI C0G
TSM4N70CH C5G
TSM4N70CP ROG
Note:
PACKAGE
ITO-220
PACKING
50pcs / Tube
TO-251 (IPAK)
TO-252 (DPAK)
75pcs / Tube
2,500pcs / 13” Reel
1. Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
2. Halogen-free according to IEC 61249-2-21 definition
Document Number: DS_P0000167
3
Version: A15
TSM4N70
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Output Characteristics
Transfer Characteristics
Normalized Vth vs. Junction Temperature
Gate Charge
Maximum Safe Operating Area (ITO-220)
On-Resistance Variation vs. Temperature
Document Number: DS_P0000167
4
Version: A15
TSM4N70
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TC = 25°C unless otherwise noted)
Maximum Safe Operating Area (DPAK,IPAK)
Normalized Thermal Transient Impedance Curve (ITO-220)
Normalized Thermal Transient Impedance Curve (DPAK,IPAK)
Document Number: DS_P0000167
5
Version: A15
TSM4N70
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
ITO-220
MARKING DIAGRAM
G
Y
= Halogen Free
= Year Code
WW = Week Code (01~52)
= Factory Code
F
Document Number: DS_P0000167
6
Version: A15
TSM4N70
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-251 (IPAK)
MARKING DIAGRAM
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
`
S =May T =Jun U =Jul
V =Aug
W =Sep X =Oct
Y =Nov Z =Dec
L
= Lot Code (1~9, A~Z)
Document Number: DS_P0000167
7
Version: A15
TSM4N70
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS (Unit: Millimeters)
TO-252 (DPAK)
SUGGESTED PAD LAYOUT (Unit: Millimeters)
MARKING DIAGRAM
Y = Year Code
M = Month Code for Halogen Free Product
O =Jan P =Feb Q =Mar R =Apr
`
S =May T =Jun U =Jul
V =Aug
W =Sep X =Oct
Y =Nov Z =Dec
L
= Lot Code (1~9, A~Z)
Document Number: DS_P0000167
8
Version: A15
TSM4N70
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_P0000167
9
Version: A15
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