TSM55N03_07 [TSC]
25V N-Channel MOSFET; 25V N沟道MOSFET
| 型号： | TSM55N03_07 |
| 厂家： | 
TAIWAN SEMICONDUCTOR COMPANY, LTD |
| 描述： | 25V N-Channel MOSFET |
| 文件： | 总6页 (文件大小：362K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSM55N03
25V N-Channel MOSFET
PRODUCT SUMMARY
TO-252
Pin Definition:
1. Gate
2. Drain
VDS (V)
RDS(on)(mΩ)
6 @ VGS = 10V
9 @ VGS = 4.5V
ID (A)
30
3. Source
25
30
Features
Block Diagram
●
●
Advance Trench Process Technology
High Density Cell Design for Ultra Low On-resistance
Application
●
●
Load Switch
Dc-DC Converters and Motors Drivers
Ordering Information
Part No.
Package
TO-252
Packing
TSM55N03CP RO
2.5Kpcs / 13” Reel
N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
25
Unit
V
Drain-Source Voltage
VDS
VGS
ID
Gate-Source Voltage
±20
55
V
Continuous Drain Current, VGS @4.5V.
Pulsed Drain Current, VGS @4.5V
Continuous Source Current (Diode Conduction)a,b
Single Pulse Drain to Source Avalanche Energy
(VDD = 100V, VGS=10V, IAS=2A, L=10mH, RG=25Ω)
A
IDM
IS
150
20
A
A
EAS
PD
300
mJ
Ta = 25oC
Ta = 70oC
65
42
Maximum Power Dissipation
W
Operating Junction Temperature
TJ
+150
oC
oC
Operating Junction and Storage Temperature Range
TJ, TSTG
-55 to +150
Thermal Performance
Parameter
Symbol
TL
Limit
10
Unit
S
oC/W
oC/W
Lead Temperature (1/8” from case)
Junction to Case Thermal Resistance
Junction to Ambient Thermal Resistance (PCB mounted)
Notes:
RӨJC
RӨJA
1.8
40
a. Maximum DC current limited by the package
b. Surface Mounted on 1” x 1” FR4 Board, t ≤ 10 sec.
1/6
Version: A07
TSM55N03
25V N-Channel MOSFET
Electrical Specifications (Ta = 25oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
VGS = 0V, ID = 250uA
VDS = VGS, ID = 250uA
VGS = ±20V, VDS = 0V
VDS = 25V, VGS = 0V
VDS ≥5V, VGS = 10V
VGS = 4.5V, ID = 30A
VGS = 10V, ID = 30A
VDS = 15V, ID = 15A
IS = 20A, VGS = 0V
BVDSS
VGS(TH)
IGSS
25
1.0
--
--
1.9
--
--
3.0
±100
1.0
--
V
V
nA
uA
A
Zero Gate Voltage Drain Current
On-State Drain Current
IDSS
--
--
ID(ON)
55
--
--
7.5
4.5
55
0.85
9
Drain-Source On-State Resistance
RDS(ON)
mΩ
--
6
Forward Transconductance
Diode Forward Voltage
Dynamicb
gfs
--
--
S
V
VSD
--
1.3
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingc
Qg
Qgs
Qgd
Ciss
Coss
Crss
--
--
--
--
--
--
26
6
--
--
--
--
--
--
VDS = 15V, ID = 20A,
VGS = 5V
nC
pF
5
2325.9
330.55
173.91
VDS = 15V, VGS = 0V,
f = 1.0MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
tf
--
--
--
--
15.13
4
--
--
--
--
VDD = 15V, RL = 15Ω,
ID = 1A, VGEN = 10V,
RG = 6Ω
nS
45.27
7.6
Turn-Off Fall Time
Notes:
a. pulse test: PW ≤300µS, duty cycle ≤2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
2/6
Version: A07
TSM55N03
25V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
Output Characteristics
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
3/6
Version: A07
TSM55N03
25V N-Channel MOSFET
Electrical Characteristics Curve (Ta = 25oC, unless otherwise noted)
On-Resistance vs. Gate-Source Voltage
Threshold Voltage
Maximum Safe Operating Area
Normalized Thermal Transient Impedance, Junction-to-Ambient
4/6
Version: A07
TSM55N03
25V N-Channel MOSFET
SOT-252 Mechanical Drawing
TO-252 DIMENSION
MILLIMETERS
MIN MAX
2.3BSC
4.6BSC
INCHES
MIN MAX
DIM
A
A1
B
0.09BSC
0.18BSC
6.80
5.40
6.40
2.20
0.00
5.20
0.75
0.55
0.35
0.90
2.20
0.50
0.90
1.30
7.20
5.60
6.65
2.40
0.20
5.40
0.85
0.65
0.65
1.50
2.80
1.10
1.50
1.70
0.268
0.283
0.220
0.262
0.094
0.008
0.213
0.033
0.026
0.026
0.059
0.110
0.043
0.059
0.67
C
D
E
0.213
0.252
0.087
0.000
0.205
0.030
0.022
0.014
0.035
0.087
0.020
0.035
0.051
F
G
G1
G2
H
I
J
K
L
M
Marking Diagram
Y
= Year Code
M = Month Code
(A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug,
I=Sep, J=Oct, K=Nov, L=Dec)
L
= Lot Code
5/6
Version: A07
TSM55N03
25V N-Channel MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for
such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability,
or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers
using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for
any damages resulting from such improper use or sale.
6/6
Version: A07
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